Low Voltage Drive N Channel Power MOSFET LRC LNTK3043NT5G Ideal for High Density PCB Manufacturing
Key Attributes
Model Number:
LNTK3043NT5G
Product Custom Attributes
Drain To Source Voltage:
20V
Current - Continuous Drain(Id):
285mA
RDS(on):
3.8Ω@4.5V,255mA
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
1.3V
Reverse Transfer Capacitance (Crss@Vds):
7pF@10V
Number:
1 N-channel
Pd - Power Dissipation:
440mW
Input Capacitance(Ciss):
55pF@10V
Mfr. Part #:
LNTK3043NT5G
Package:
SOT-723
Product Description
Product Overview
The LNTK3043NT5G and S-LNTK3043NT5G are N-Channel Power MOSFETs designed for high-density PCB manufacturing. These devices feature a significantly smaller footprint and thinner profile compared to SC-89 packages, making them ideal for extremely thin environments like portable electronics. Their low voltage drive and low threshold levels (< 1.3 V) ensure compatibility with portable equipment and standard logic level gate drives, facilitating future migration to lower voltage requirements. The S- prefix denotes automotive-grade devices that are AEC-Q101 qualified and PPAP capable.
Product Attributes
- Brand: Leshan Radio Company, LTD.
- Material Compliance: Pb-Free, RoHS compliant, Halogen Free
- Certifications: AEC-Q101 qualified (S- prefix models)
- Packaging: SOT-723
- Device Marking: LNTK3043NT5G (KA), S-LNTK3043NT5G
- Revision: Rev.B
- Date: Oct. 2021
Technical Specifications
| Parameter | Symbol | Min. | Typ. | Max. | Unit | Conditions |
|---|---|---|---|---|---|---|
| DraintoSource Voltage | VDSS | 20 | V | |||
| GatetoSource Voltage | VGS | 10 | V | |||
| Continuous Drain Current | ID | 285 | mA | TA = 25C, Steady State (Note 1) | ||
| Continuous Drain Current | ID | 210 | mA | TA = 25C, Steady State (Note 2) | ||
| Continuous Drain Current | ID | 155 | mA | TA = 85C, Steady State (Note 2) | ||
| Pulsed Drain Current | IDM | 400 | mA | tp = 10 s, t 5 s | ||
| Power Dissipation | PD | 545 | mW | TA = 25C, Steady State (Note 1) | ||
| Power Dissipation | PD | 310 | mW | TA = 25C, Steady State (Note 2) | ||
| Source Current (Body Diode) | IS | 286 | mA | (Note 2) | ||
| Operating Junction and Storage Temperature | TJ,Tstg | -55 | 150 | C | ||
| Lead Temperature for Soldering Purposes | TL | 260 | C | (1/8 " from case for 10 s) | ||
| DraintoSource Breakdown Voltage | VBRDSS | 20 | V | (VGS = 0, ID = 100A) | ||
| Zero Gate Voltage Drain Current | IDSS | 1 | A | (VGS = 0, VDS = 16 V,TJ = 25C) | ||
| Zero Gate Voltage Drain Current | IDSS | 10 | A | (VGS = 0, VDS = 16 V,TJ = 125C) | ||
| GateBody Leakage Current | IGSS | 1 | A | (VDS = 0 V, VGS = 5 V) | ||
| Gate Threshold Voltage | VGS(th) | 1.3 | V | (VDS = VGS, ID = 250A) | ||
| Gate Threshold Voltage Temperature Coefficient | VGS(TH)/TJ | -2.4 | mV/C | |||
| Static DrainSource OnState Resistance | RDS(on) | 5.1 | (VGS = 4.5V, ID = 10 mA) | |||
| Static DrainSource OnState Resistance | RDS(on) | 1.5 | (VGS = 4.5V, ID = 255 mA) | |||
| Static DrainSource OnState Resistance | RDS(on) | 3.4 | (VGS = 2.5 V, ID = 1 mA) | |||
| Static DrainSource OnState Resistance | RDS(on) | 1.6 | (VGS = 1.8 V, ID = 1 mA) | |||
| Static DrainSource OnState Resistance | RDS(on) | 2.4 | (VGS = 1.65 V, ID = 1 mA) | |||
| Input Capacitance | Ciss | 228 | pF | (VGS = 0 V, VDS = 20 V, f=1 MHz) | ||
| Output Capacitance | Coss | 400 | pF | (VGS = 0 V, VDS = 20 V, f=1 MHz) | ||
| Reverse Transfer Capacitance | Crss | 27 | pF | (VGS = 0 V, VDS = 20 V, f=1 MHz) | ||
| Turn-On Delay Time | td(on) | 4.8 | ns | (VGS = 4.5 V, VDD = 5 V, ID = 10 mA, RG = 6) | ||
| Rise Time | tr | 2.4 | ns | (VGS = 4.5 V, VDD = 5 V, ID = 10 mA, RG = 6) | ||
| Turn-Off Delay Time | td(off) | 32 | ns | (VGS = 4.5 V, VDD = 5 V, ID = 10 mA, RG = 6) | ||
| Fall Time | tf | 69 | ns | (VGS = 4.5 V, VDD = 5 V, ID = 10 mA, RG = 6) | ||
| Diode Forward Voltage | VSD | 0.83 | 1.2 | V | (VGS = 0 V, IS = 286 mA) | |
| Reverse Recovery Time | tRR | 7.1 | ns | (VGS = 0 V, IS = 286 mA, dISD/dt = 100 A/ s) | ||
| Reverse Recovery Charge | QRR | 2.0 | nC | (VGS = 0 V, IS = 286 mA, dISD/dt = 100 A/ s) | ||
| Thermal Resistance-Junction to Ambient | RJA | 228 | C/W | Steady State (Note 1) | ||
| Thermal Resistance-Junction to Ambient | RJA | 280 | C/W | t 5 s (Note 1) | ||
| Thermal Resistance-Junction to Ambient | RJA | 440 | C/W | Steady State (Note 2) | ||
| Dimensions (D) | 1.15 | 1.20 | 1.25 | mm / inches | ||
| Dimensions (E) | 0.75 | 0.80 | 0.85 | mm / inches | ||
| Dimensions (A) | 0.45 | 0.50 | 0.55 | mm / inches | ||
| Dimensions (b) | 0.15 | 0.27 | mm / inches | |||
| Dimensions (b1) | 0.25 | 0.37 | mm / inches | |||
| Dimensions (c) | 0.07 | 0.17 | mm / inches | |||
| Dimensions (e) | 0.40 | mm / inches | REF | |||
| Dimensions (HE) | 1.15 | 1.20 | 1.25 | mm / inches | ||
| Dimensions (L) | 0.29 | mm / inches | REF | |||
| Dimensions (L2) | 0.15 | 0.25 | mm / inches |
Notes:
- 1. Surface-mounted on FR4 board using 1 in sq pad size (Cu area = 1.127 in sq [1 oz] including traces).
- 2. Surface-mounted on FR4 board using the minimum recommended pad size.
- 3. Pulse Test: Pulse Width 300 s, Duty Cycle 2.0%.
- 4. Switching characteristics are independent of operating junction temperatures.
- 5. Curve guarantee in the specification. The curve of test items with electric parameter is used as quality guarantee. The curve of test items without electric parameter is used as reference only.
Disclaimer: All information contained in this document is current as of the issuing date and subject to change without any prior notice. Before purchasing or using LRC's Products, please confirm the latest information with a LRC sales representative.
2211080930_LRC-LNTK3043NT5G_C5201700.pdf
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