Automotive PNP Silicon Driver Transistor LRC LMBTA56LT1G with RoHS Compliance and SOT23 Package Design
Key Attributes
Model Number:
LMBTA56LT1G
Product Custom Attributes
Emitter-Base Voltage(Vebo):
4V
Current - Collector Cutoff:
100nA
Pd - Power Dissipation:
225mW
Transition Frequency(fT):
50MHz
Type:
PNP
Current - Collector(Ic):
500mA
Collector - Emitter Voltage VCEO:
80V
Operating Temperature:
-55℃~+150℃
Mfr. Part #:
LMBTA56LT1G
Package:
SOT-23
Product Description
Product Overview
This PNP Silicon driver transistor is designed for automotive and other applications requiring unique site and control change requirements. It is AEC-Q101 qualified and PPAP capable, ensuring high reliability and compliance with stringent industry standards. The device offers robust performance with a maximum collector-emitter voltage of -80 Vdc and a continuous collector current of -500 mAdc.
Product Attributes
- Compliance: RoHS requirements and Halogen Free
- Qualification: AEC-Q101 Qualified and PPAP Capable
- Marking: LMBTA56LT1G, LMBTA56LT3G
- Package: SOT-23
Technical Specifications
| Parameter | Symbol | Limits | Unit | Notes |
|---|---|---|---|---|
| CollectorEmitter Voltage | VCEO | -80 | Vdc | |
| CollectorBase Voltage | VCBO | -80 | Vdc | |
| EmitterBase Voltage | VEBO | -4.0 | Vdc | |
| Collector Current Continuous | IC | -500 | mAdc | |
| Total Power Dissipation (FR-5 Board) | PD | 225 | mW | @Ta = 25C; Derate above 25C 1.8 C/W; FR-5 = 1.0 x 0.75 x 0.062 in. |
| Thermal Resistance, Junction-to-Ambient (FR-5 Board) | RJA | 556 | C/W | |
| Total Power Dissipation (Alumina Substrate) | PD | 300 | mW | @Ta = 25C; Derate above 25C 2.4 C/W; Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina. |
| Thermal Resistance, Junction-to-Ambient (Alumina Substrate) | RJA | 417 | C/W | |
| Junction and Storage Temperature Range | TJ, Tstg | 55 to +150 | C | |
| CollectorEmitter Breakdown Voltage | VBR(CEO) | -80 | V | (IC = - 1 mAdc, IB = 0) |
| EmitterBase Breakdown Voltage | VBR(EBO) | -4 | V | (IE = -100 Adc, IC = 0) |
| Collector Cutoff Current | ICES | -0.1 | A | (VCE = - 60 Vdc, IE = 0) |
| Collector Cutoff Current | ICBO | -0.1 | A | (VCB = - 80 Vdc, IE = 0) |
| DC Current Gain | hFE | 100 | (IC = -10 mAdc, VCE = -1 Vdc) or (IC = -100 mAdc, VCE = -1 Vdc) | |
| CollectorEmitter Saturation Voltage | VCE(sat) | -0.25 | V | (IC = -100mAdc, IB = -10 mAdc) |
| CollectorEmitter Saturation Voltage | VCE(sat) | -1.20 | V | (IC = -100mAdc, VCE = -1 mAdc) |
| BaseEmitter On Voltage | VBE(on) | -1.0 | V | (IC = -100mAdc, IB = -10 mAdc) |
| CurrentGain Bandwidth Product | fT | 50 | MHz | (IC = -100mAdc, VCE= -1Vdc, f = 100MHz) |
| Shipping (Tape & Reel) | 3000/10000 | /Tape&Reel | LMBTA56LT1G / S-LMBTA56LT1G |
1810010234_LRC-LMBTA56LT1G_C78722.pdf
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