switching MOSFET MagnaChip Semicon MDF7N60BTH with 600 volt drain source voltage and low on resistance
Key Attributes
Model Number:
MDF7N60BTH
Product Custom Attributes
Mfr. Part #:
MDF7N60BTH
Package:
TO-220F
Product Description
Product Overview
The MDF7N60B is an N-channel MOSFET produced using advanced Magnachip's MOSFET Technology. It offers low on-state resistance, high switching performance, and excellent quality, making it suitable for SMPS, high-speed switching, and general-purpose applications. Key features include a VDS of 600V, VDS of 660V at Tjmax, and an ID of 7.0A at VGS = 10V, with an RDS(ON) of 1.15 at VGS = 10V.
Product Attributes
- Brand: Magnachip Semiconductor Ltd.
- Origin: Not specified
- Material: Not specified
- Color: Not specified
- Certifications: RoHS Status: Halogen Free
Technical Specifications
| Part Number | Marking | Temp. Range | Package | Packing | Drain-Source Voltage (VDSS) | Continuous Drain Current (ID @ TC=25C) | Pulsed Drain Current (IDM) | Power Dissipation (PD @ TC=25C) | RDS(ON) (Typ @ VGS=10V, ID=3.5A) | Gate Threshold Voltage (VGS(th)) | Total Gate Charge (Qg @ VDS=480V, ID=7.0A, VGS=10V) | Input Capacitance (Ciss @ VDS=25V, VGS=0V, f=1.0MHz) | Output Capacitance (Coss @ VDS=25V, VGS=0V, f=1.0MHz) | Reverse Transfer Capacitance (Crss @ VDS=25V, VGS=0V, f=1.0MHz) | Drain-Source Body Diode Forward Current (IS) | Source-Drain Diode Forward Voltage (VSD @ IS=7.0A, VGS=0V) | Body Diode Reverse Recovery Time (trr @ IF=7.0A, dl/dt=100A/s) | Body Diode Reverse Recovery Charge (Qrr @ IF=7.0A, dl/dt=100A/s) |
| MDF7N60BTH | MDF7N60B | -55~150C | TO-220F | Tube | 600 V | 7.0* A | 28* A | 42 W | 1.0 | 2.0 - 4.0 V | 20.1 nC | 800 pF | 90 pF | 5 pF | 7.0 A | 1.4 V | 345 ns | 3.2 C |
2509121506_MagnaChip-Semicon-MDF7N60BTH_C50313150.pdf
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