Compact P Channel MOSFET LRC LBSS84DW1T1G for energy conservation in small power management circuits
Key Attributes
Model Number:
LBSS84DW1T1G
Product Custom Attributes
Drain To Source Voltage:
50V
Current - Continuous Drain(Id):
130mA
Operating Temperature -:
-55℃~+150℃
RDS(on):
10Ω@5.0V
Gate Threshold Voltage (Vgs(th)):
2V@250uA
Type:
P-Channel
Reverse Transfer Capacitance (Crss@Vds):
4pF
Number:
1 P-Channel
Output Capacitance(Coss):
20pF
Input Capacitance(Ciss):
42pF
Pd - Power Dissipation:
380mW
Gate Charge(Qg):
6nC
Mfr. Part #:
LBSS84DW1T1G
Package:
SC-88
Product Description
Product Overview
The LESHAN RADIO COMPANY, LTD. LBSS84DW1T1G and S-LBSS84DW1T1G are miniature surface mount P-Channel MOSFETs designed to reduce power loss and conserve energy. These devices are ideal for small power management circuitry, including DC-DC converters, load switching, and power management in portable and battery-powered products such as computers, printers, cellular, and cordless telephones. Their energy-efficient design and miniature SC88 surface mount package contribute to board space savings.
Product Attributes
- Brand: LESHAN RADIO COMPANY, LTD.
- Package Type: SC88 (SOT-363)
- Material: Pb-Free Package available
- Certifications: AEC-Q101 Qualified and PPAP Capable (for S- Prefix models)
Technical Specifications
| Characteristic | Symbol | Value | Unit | Notes |
|---|---|---|---|---|
| DraintoSource Voltage | VDSS | -50 | Vdc | |
| GatetoSource Voltage Continuous | VGS | 20 | Vdc | |
| Drain Current Continuous @ TA = 25C | ID | -130 | mA | |
| Pulsed Drain Current (tp 10 s) | IDM | -520 | mA | |
| Total Power Dissipation @ TA = 25C | PD | 380 | mW | |
| Operating and Storage Temperature Range | TJ, Tstg | 55 to 150 | C | |
| Thermal Resistance JunctiontoAmbient | RJA | 328 | C/W | |
| Maximum Lead Temperature for Soldering Purposes, for 10 seconds | TL | 260 | C | |
| DraintoSource Breakdown Voltage (VGS = 0 Vdc, ID = -250 Adc) | V(BR)DSS | -50 | Vdc | |
| Zero Gate Voltage Drain Current (VDS = -25 Vdc, VGS = 0 Vdc) | IDSS | -0.1 | Adc | |
| Zero Gate Voltage Drain Current (VDS = -50 Vdc, VGS = 0 Vdc) | IDSS | -15 | Adc | |
| Zero Gate Voltage Drain Current (VDS = -50 Vdc, VGS = 0 Vdc, TJ = 125C) | IDSS | -60 | Adc | |
| GateBody Leakage Current (VGS = 20 Vdc, VDS = 0 Vdc) | IGSS | 100 | nAdc | |
| GateSource Threshold Voltage (VDS = VGS, ID = -250 Adc) | VGS(th) | -0.8 to -2.0 | V | |
| Static DraintoSource OnResistance (VGS = -5.0 Vdc, ID = -100 mAdc) | rDS(on) | 5.0 to 10 | Ohms | |
| Input Capacitance (VDS = -5.0 Vdc) | Ciss | 42 | pF | |
| Output Capacitance (VDS = -5.0 Vdc) | Coss | 20 | pF | |
| Transfer Capacitance (VDG = -5.0 Vdc) | Crss | 4 | pF | |
| TurnOn Delay Time | td(on) | 16.7 | ns | |
| Rise Time (VDS = 15 V, VGS = 10 V, RL = 50 , RG = 25 ) | tr | 8.6 | ns | |
| TurnOff Delay Time | td(off) | 17.9 | ns | |
| Fall Time | tf | 5.3 | ns | |
| Gate Charge | QT | 6000 | pC | |
| Model Number | LBSS84DW1T1G | |||
| Model Number (Automotive) | S-LBSS84DW1G | |||
| Package Dimensions (A) | 1.80 - 2.20 | mm | ||
| Package Dimensions (B) | 1.15 - 1.35 | mm | ||
| Package Dimensions (C) | 0.80 - 1.10 | mm | ||
| Package Dimensions (D) | 0.10 - 0.30 | mm | ||
| Package Dimensions (G) | 0.65 BSC | mm | ||
| Package Dimensions (H) | 0.10 MAX | mm | ||
| Package Dimensions (J) | 0.10 - 0.25 | mm | ||
| Package Dimensions (K) | 0.10 - 0.30 | mm | ||
| Package Dimensions (N) | 0.20 REF | mm | ||
| Package Dimensions (S) | 2.00 - 2.20 | mm |
2410010130_LRC-LBSS84DW1T1G_C383207.pdf
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