High voltage MOSFET MASPOWER MS05N250HGE0 designed for switching in inverter and power supply systems
Key Attributes
Model Number:
MS05N250HGE0
Product Custom Attributes
Drain To Source Voltage:
2.5kV
Current - Continuous Drain(Id):
500mA
RDS(on):
45Ω@10V
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
6.5V
Reverse Transfer Capacitance (Crss@Vds):
6pF
Number:
1 N-channel
Output Capacitance(Coss):
16pF
Pd - Power Dissipation:
83W
Input Capacitance(Ciss):
232pF
Gate Charge(Qg):
7.4nC@10V
Mfr. Part #:
MS05N250HGE0
Package:
TO-263
Product Description
Product Overview
The MS05N250HGE0 H1.02 Maspower is a high-voltage power MOSFET designed for high-speed switching applications. It features 100% avalanche testing, a fast intrinsic diode, minimized gate charge, and very low intrinsic capacitances, making it suitable for demanding power supply and inverter applications.
Product Attributes
- Brand: Maspower
- Model: MS05N250HGE0 H1.02
Technical Specifications
| Parameter | Symbol | Test conditions | Min | Typ | Max | Unit |
| Drain-source breakdown voltage | V(BR)DSS | ID = 250 A, VGS = 0 | 2500 | V | ||
| Zero gate voltage drain current | IDSS | VDS = Max rating | 100 | 1000 | A | |
| Zero gate voltage drain current | IDSS | VDS=Max rating, TC=125 C | 1000 | A | ||
| Gate-body leakage current | IGSS | VGS = 30 V | 200 | nA | ||
| Gate threshold voltage | VGS(th) | VDS = VGS, ID = 250 A | 4.5 | 6.5 | V | |
| Static drain-source on resistance | RDS(on) | VGS = 10V, ID = 0.5A | 39 | 45 | ||
| Forward trans-conductance | gfs | VDS = 15 V, ID = 0.25A | 200 | mS | ||
| Input capacitance | Ciss | VDS=25V,f=1MHz,VGS=0 | 232 | pF | ||
| Output capacitance | Coss | VDS=25V,f=1MHz,VGS=0 | 16 | pF | ||
| Reverse transfer capacitance | Crss | VDS=25V,f=1MHz,VGS=0 | 6 | pF | ||
| Total gate charge | Qg | VDD=1250V,ID=0.5mA,VGS=10V | 7.4 | nC | ||
| Gate-source charge | Qgs | VDD=1250V,ID=0.5mA,VGS=10V | 0.7 | nC | ||
| Gate-drain charge | Qgd | VDD=1250V,ID=0.5mA,VGS=10V | 5.3 | nC | ||
| Turn-on delay time | td(on) | Resistive load, VDD = 1250 V, ID =0.25A, RG = 4.7 , VGS = 10 V | 16 | ns | ||
| Rise time | tr | Resistive load, VDD = 1250 V, ID =0.25A, RG = 4.7 , VGS = 10 V | 14 | ns | ||
| Turn-off-delay time | td(off) | Resistive load, VDD = 1250 V, ID =0.25A, RG = 4.7 , VGS = 10 V | 35 | ns | ||
| Fall time | tf | Resistive load, VDD = 1250 V, ID =0.25A, RG = 4.7 , VGS = 10 V | 37 | ns | ||
| Source-drain current | ISD | 0.5 | A | |||
| Source-drain current (pulsed) | ISDM | 2 | A | |||
| Forward on voltage | VSD | ISD= 0.5A, VGS= 0 | 1.3 | V | ||
| Reverse recovery time | trr | ISD=0.5A, di/dt=50A/s, VDD= 100 V | 1300 | ns | ||
| Reverse recovery charge | Qrr | ISD=0.5A, di/dt=50A/s, VDD= 100 V | 9 | C | ||
| Reverse recovery current | IRRM | ISD=0.5A, di/dt=50A/s, VDD= 100 V | 0.3 | A | ||
| Reverse recovery time | trr | ISD=0.5A, di/dt=100A/s, VDD= 60V, TJ=150C | 1200 | ns | ||
| Reverse recovery charge | Qrr | ISD=0.5A, di/dt=100A/s, VDD= 60V, TJ=150C | 8.5 | C | ||
| Reverse recovery current | IRRM | ISD=0.5A, di/dt=100A/s, VDD= 60V, TJ=150C | 0.25 | A |
2411261901_MASPOWER-MS05N250HGE0_C37635857.pdf
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