Low On State Resistance Power Transistor MATSUKI ME4174 N Channel 30V MOSFET for Notebook Computers
Key Attributes
Model Number:
ME4174
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
15.8A
Operating Temperature -:
-55℃~+150℃
RDS(on):
11mΩ@4.5V
Gate Threshold Voltage (Vgs(th)):
3V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
84pF@15V
Number:
1 N-channel
Input Capacitance(Ciss):
1.64nF@15V
Pd - Power Dissipation:
2.5W
Gate Charge(Qg):
160nC
Mfr. Part #:
ME4174
Package:
SOP-8
Product Description
Product Overview
The ME4174 is an N-Channel logic enhancement mode power field-effect transistor utilizing high cell density, DMOS trench technology. This advanced technology minimizes on-state resistance, making the device ideal for low-voltage applications such as power management in cellular phones and notebook computers, as well as other battery-powered circuits requiring high-side switching and low in-line power loss in a compact surface mount package.
Product Attributes
- Brand: Matsuki (implied by datasheet content)
- Product Series: ME4174/ME4174-G
- Product Type: N-Channel 30V (D-S) MOSFET
- Certifications: Pb-free (ME4174), Green product-Halogen free (ME4174-G)
Technical Specifications
| Parameter | Symbol | Condition | Min | Typ | Max | Unit |
| Drain-Source Voltage | VDSS | 30 | V | |||
| Gate-Source Voltage | VGSS | 20 | V | |||
| Continuous Drain Current | ID | TA=25 | 15.8 | A | ||
| TA=70 | 12.7 | A | ||||
| Pulsed Drain Current | IDM | 64 | A | |||
| Maximum Power Dissipation | PD | TA=25 | 2.5 | W | ||
| TA=70 | 1.6 | W | ||||
| Operating Junction Temperature | TJ | -55 | 150 | |||
| Thermal Resistance-Junction to Ambient* | RJA | Steady State | 50 | /W | ||
| Gate Threshold Voltage | VGS(th) | VDS=VGS, ID=250A | 1.0 | 3.0 | V | |
| Gate Leakage Current | IGSS | VDS=0V, VGS=20V | 10 | A | ||
| Zero Gate Voltage Drain Current | IDSS | VDS=30V, VGS=0V | 1 | A | ||
| Drain-Source On-State Resistance | RDS(ON) | VGS=10V, ID=30A | 5.2 | 6.2 | m | |
| VGS=4.5V, ID=15A | 8.2 | 11 | m | |||
| Diode Forward Voltage | VSD | IS=20A, VGS=0V | 0.8 | 1.2 | V | |
| Gate Charge | Qg | VDS=15V, VGS=10V, ID=25A | 37 | nC | ||
| Total Gate Charge | Qgt | VDS=15V, VGS=10V, ID=25A | 19 | nC | ||
| Gate-Source Charge | Qgs | VDS=15V, VGS=10V, ID=25A | 8 | nC | ||
| Gate-Drain Charge | Qgd | VDS=15V, VGS=10V, ID=25A | 9 | nC | ||
| Input capacitance | Ciss | VDS=15V, VGS=0V, f=1MHz | 1640 | pF | ||
| Output Capacitance | Coss | VDS=15V, VGS=0V, f=1MHz | 260 | pF | ||
| Reverse Transfer Capacitance | Crss | VDS=15V, VGS=0V, f=1MHz | 84 | pF | ||
| Gate Resistance | Rg | f=1MHz | 0.9 | |||
| Turn-On Delay Time | td(on) | VDD=15V, RL=15 ID=1A, VGEN=10V RG=3 | 19 | ns | ||
| Turn-On Rise Time | tr | VDD=15V, RL=15 ID=1A, VGEN=10V RG=3 | 15 | ns | ||
| Turn-Off Delay Time | td(off) | VDD=15V, RL=15 ID=1A, VGEN=10V RG=3 | 54 | ns | ||
| Turn-On Fall Time | tf | VDD=15V, RL=15 ID=1A, VGEN=10V RG=3 | 6.5 | ns |
2410121513_MATSUKI-ME4174_C2693568.pdf
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