NPN Silicon Transistor Minos D882 Ideal for Audio Amplification and Switching Power Circuit Designs
Key Attributes
Model Number:
D882
Product Custom Attributes
Current - Collector Cutoff:
1uA
Emitter-Base Voltage(Vebo):
5V
Pd - Power Dissipation:
10W
Transition Frequency(fT):
90MHz
Type:
NPN
Number:
1 NPN
Current - Collector(Ic):
3A
Collector - Emitter Voltage VCEO:
30V
Operating Temperature:
-
Mfr. Part #:
D882
Package:
TO-252
Product Description
Product Overview
This NPN Silicon Transistor is designed for audio amplification and switching power amplification applications. It offers reliable performance with clearly defined electrical parameters and maximum ratings to ensure optimal circuit design and device longevity.
Product Attributes
- Brand: MNS
- Type: NPN Silicon Transistor
- Origin: Shenzhen Minos Technology Co., Ltd. (Headquarters)
Technical Specifications
| Parameter | Symbol | Description | Min. | Typ. | Max. | Unit | Test Conditions |
|---|---|---|---|---|---|---|---|
| Collector-Base Cut-off Current | ICBO | 60 | A | VCB=30V, IE=0 | |||
| Emitter-Base Cut-off Current | IEBO | 0.3 | A | VEB=5V, IC=0 | |||
| DC Current Gain | hFE | 45 | 90 | VCE=2V, IC=1A | |||
| Collector-Emitter Saturation Voltage | VCE(sat) | 1.0 | V | IC=2A, IB=0.2A | |||
| Base-Emitter Saturation Voltage | VBE(sat) | 0.5 | V | IC=2A, IB=0.2A | |||
| Output Capacitance | Cob | 400 | pF | VCB=10V, IE=0, f=1MHz | |||
| Characteristic Frequency | fT | 1 | MHz | VCE=5V, IE=0.1A | |||
| Collector-Base Voltage | VCBO | 40 | V | ||||
| Collector-Emitter Voltage | VCEO | 30 | V | ||||
| Emitter-Base Voltage | VEBO | 5 | V | ||||
| Collector Current | IC | 3 | A | ||||
| Base Current | IB | 0.6 | A | ||||
| Collector Power Dissipation (Tc=25) | PC | 10 | W | ||||
| Collector Power Dissipation (Ta=25) | PC | 1 | W | ||||
| Storage Temperature | Tstg | -55 | 150 | ||||
| Junction Temperature | Tj | 150 |
HFE Sorting and Marking
- R: 60120
- Q: 100200
- P: 160320
- E: 200400
Package and Pin Configuration
- Package: TO-252
- Pin 1: Base (B)
- Pin 2: Collector (C)
- Pin 3: Emitter (E)
Important Notes
- Exceeding the maximum ratings may cause permanent device failure.
- Ensure proper heat sink installation and consider torsional moment and smoothness.
- MOSFETs are sensitive to static electricity; take protective measures.
- Shenzhen Minos reserves the right to make changes without prior notice.
Contact Information
- Company: Shenzhen Minos Technology Co., Ltd. (Headquarters)
- Address: 22B-22C, Tianmian City Building, 4026 Shennan Middle Road, Tianmian Community, Huafu Street, Futian District, Shenzhen
- Postal Code: 518025
- Phone: 0755-83273777
2504101957_Minos-D882_C19189963.pdf
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