High Current Minos MD20N50H Power MOSFET with 80A Pulsed Drain Current and 30V Gate to Source Voltage
Key Attributes
Model Number:
MD20N50H
Product Custom Attributes
Drain To Source Voltage:
500V
Current - Continuous Drain(Id):
20A
RDS(on):
280mΩ@10V
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
4V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
18pF@25V
Number:
1 N-channel
Input Capacitance(Ciss):
1.92nF@25V
Pd - Power Dissipation:
230W
Gate Charge(Qg):
83nC@10V
Mfr. Part #:
MD20N50H
Package:
TO-3PN
Product Description
Product Overview
The MD20N50H is a silicon N-Channel Enhanced Power MOSFET utilizing advanced technology to reduce conduction losses, improve switching performance, and enhance avalanche energy. It is suitable for high-frequency switching mode power supplies (SMPS) and general-purpose applications.
Product Attributes
- Brand: MNS-KX
- Certifications: RoHS product
Technical Specifications
| Parameter | Value | Units | Conditions | |
| General Features | VDS | 500 | V | |
| Rds(on) | <280 | m | VGS=10V, ID=20A (Typ:230m) | |
| Fast Switching | ||||
| Low Crss | typical 18 | pF | ||
| 100% avalanche tested | ||||
| Absolute Ratings | ID Continuous Drain Current | 20 | A | @ Ta=25 |
| ID Continuous Drain Current | 12.6 | A | TC = 100 C | |
| IDM Pulsed Drain Current | 80 | A | (Note1) | |
| Absolute Ratings | VGS Gate-to-Source Voltage | 30 | V | |
| Absolute Ratings | EAS Single Pulse Avalanche Energy | 1200 | mJ | (Note2) |
| Absolute Ratings | dv/dt Peak Diode Recovery dv/dt | 5.0 | V/ns | (Note3) |
| Power Dissipation | PD (TO-220, TO-3PN) | 230 | W | @ Ta=25 |
| PD (TO-220F, TO-3PF) | 48 | W | @ Ta=25 | |
| Absolute Ratings | TJ, Tstg Operating Junction and Storage Temperature Range | 55 to 150 | ||
| Absolute Ratings | TL Maximum Temperature for Soldering | 300 | ||
| Thermal Characteristics (No FullPAK) | RJC Junction-to-Case | 0.54 | /W | |
| RJA Junction-to-Ambient | 62.5 | /W | ||
| Thermal Characteristics (FullPAK) | RJC Junction-to-Case | 2.6 | /W | |
| RJA Junction-to-Ambient | 62.5 | /W | ||
| OFF Characteristics | VDSS Drain to Source Breakdown Voltage | 500 | V | VGS=0V, ID=250A |
| IDSS Drain to Source Leakage Current | 10 | A | VDS=500V, VGS= 0V, Tj = 25 | |
| IGSS(F) Gate to Source Forward Leakage | 100 | nA | VGS =+30V | |
| ON Characteristics | RDS(ON) Drain-to-Source On- Resistance | 0.23 | VGS=10V, ID=10A(Note4) | |
| VGS(TH) Gate Threshold Voltage | 2.0 | V | VDS = VGS, ID = 250A(Note4) | |
| gfs Forward Trans conductance | 12 | S | VDS=20V, ID=10A(Note4) | |
| Dynamic Characteristics | Ciss Input Capacitance | 1920 | PF | VGS= 0V, VDS= 25V, f = 1.0MHz |
| Coss Output Capacitance | 290 | PF | VGS= 0V, VDS= 25V, f = 1.0MHz | |
| Crss Reverse Transfer Capacitance | 18 | pF | VGS= 0V, VDS= 25V, f = 1.0MHz | |
| Switching Characteristics | td(ON) Turn-on Delay Time | 33 | ns | ID =20A, VDD = 250V, VGS= 10V, RG=20 |
| tr Rise Time | 75 | ns | ID =20A, VDD = 250V, VGS= 10V, RG=20 | |
| td(OFF) Turn-Off Delay Time | 91 | ns | ID =20A, VDD = 250V, VGS= 10V, RG=20 | |
| tf Fall Time | 83 | ns | ID =20A, VDD = 250V, VGS= 10V, RG=20 | |
| Source-Drain Diode Characteristics | IS Continuous Source Current (Body Diode) | 20 | A | TC=25 C |
| VSD Diode Forward Voltage | 1.2 | V | IS=20A, VGS=0V(Note4) | |
| Trr Reverse Recovery Time | 536 | ns | IS=20A, Tj = 25C, dIF/dt=100A/us, VGS=0V |
2410171639_Minos-MD20N50H_C41433075.pdf
Related Products
NPN General Purpose Amplifier YANGJIE MMBT2222AT SOT523 Package RoHS Compliant Electronic Component
Product OverviewThe MMBT2222AT is an NPN General Purpose Amplifier in a SOT-523 surface mount package, ideally suited for automatic insertion. It offers a moisture sensitivity level of 1 and meets UL-94 V-0 flammability rating, being halogen-free. This component is designed for general-purpose ...
Switching amplifier NPN transistor YONGYUTAI 2N3904 epitaxial planar type with 100 milliamps collector current rating
Product OverviewNPN silicon epitaxial planar transistor designed for switching and amplifier applications. It is recommended as a complementary type to the PNP transistor 2N3906. This transistor is also available in the SOT-23 case under the type designation MMBT3904.Product AttributesBrand: Not ...
Power Field Effect Transistor XDS TX15N10B N Channel MOSFET Suitable for Battery Powered Circuits
Product DescriptionThe TX15N10B is an N-Channel logic enhancement mode power field-effect transistor utilizing high cell density, DMOS trench technology. This advanced process minimizes on-state resistance, making the device particularly suitable for low-voltage applications such as cellular phones, ...
400 watt LDMOS FET power amplifier Wolfspeed PXAE213708NB-V1-R2 for 2110 to 2180 MHz cellular applications
Product Overview The Wolfspeed PXAE213708NB is a 400-watt LDMOS FET designed for multi-standard cellular power amplifier applications within the 2110 to 2180 MHz frequency band. This device features broadband internal input and output matching, an asymmetrical Doherty design with distinct main and ...
Contact Our Experts And Get A Free Consultation!
Our mission is to offer "High Quality" & "Good Service" & "Fast Delivery" to help our clients to gain more profits.
