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quality Microdiode Semiconductor MDD7N60F 600V N-Channel MOSFET with Ultra Low Gate Charge and Rugged Design factory
quality Microdiode Semiconductor MDD7N60F 600V N-Channel MOSFET with Ultra Low Gate Charge and Rugged Design factory

Microdiode Semiconductor MDD7N60F 600V N-Channel MOSFET with Ultra Low Gate Charge and Rugged Design

Key Attributes
Model Number: MDD7N60F
Product Custom Attributes
Drain To Source Voltage:
600V
Current - Continuous Drain(Id):
7A
RDS(on):
1Ω@10V
Gate Threshold Voltage (Vgs(th)):
4V
Reverse Transfer Capacitance (Crss@Vds):
6.1pF
Output Capacitance(Coss):
101pF
Input Capacitance(Ciss):
760pF
Gate Charge(Qg):
20.7nC@10V
Mfr. Part #:
MDD7N60F
Package:
TO-220F-3L
Product Description

Product Overview

The MDD7N60F is a 600V N-Channel Enhancement Mode MOSFET designed for high-efficiency switching applications. It features ultra-low gate charge, low reverse transfer capacitance, fast switching capability, and improved dv/dt capability for high ruggedness. This MOSFET is ideal for use in high-efficiency switch mode power supplies, electronic lamp ballasts based on half bridges, and LED power supplies.

Product Attributes

  • Brand: Microdiode Electronics (Shenzhen)
  • Product Line: MDD7N60F
  • Channel Type: N-Channel
  • Mode: Enhancement Mode
  • Package: TO-220F-3L

Technical Specifications

Parameter Symbol Condition Min Typ Max Unit
General Features
Drain-Source Voltage VDS 600 V
Gate-Source Voltage VGS ±30 V
Continuous Drain Current ID (Tc=25) 7 A
RDS(on) VGS=10V 1.0 Ω
Gate Charge Qg 20.7 nC
Absolute Maximum Ratings
Drain-Source Voltage VDS (TA=25unless otherwise noted) 600 V
Gate-Source Voltage VGS ±30 V
Continuous Drain Current ID 7 A
Pulsed Drain Current IDM (Note 1) 28 A
Power Dissipation PD TO-220F 45 W
Junction Temperature TJ 150
Storage Temperature Tstg -55 150
Peak Diode Recovery dv/dt dv/dt (Note 3) 5 V/ns
Diode pulse current IS,pulse 28 A
Power Dissipation PD TO-220/TO-252 120 W
Continuous diode forward current IS 7 A
Thermal Characteristics
Thermal resistance, Junction-to-case RJC 2.78 °C/W
Thermal resistance, Junction-to-ambient RJA 62.5 °C/W
Electrical Characteristics
Drain-Source Breakdown Voltage V(BR)DSS VGS=0V, ID=250μA 600 V
Gate-Source Leakage Current IGSS VGS=30V, VDS=0V ±100 nA
Drain-Source Leakage Current IDSS VDS=600V, VGS=0V 1 μA
Gate Threshold Voltage VGS(TH) VDS=VGS, ID=250μA 2.0 4.0 V
Drain-Source On-State Resistance RDS(ON) VGS=10V, ID=7A 1.0 Ω
Drain-Source On-State Resistance RDS(ON) VGS=10V, ID=1A 1.4 Ω
Dynamic Electrical Characteristics
Input Capacitance Ciss VDS=25V, VGS=0V, f=1MHz 760 pF
Output Capacitance Coss 101 pF
Reverse Transfer Capacitance Crss 6.1 pF
Total Gate Charge Qg VDS=480V, VGS=10V, ID=7A (Note1,2) 20.7 nC
Gate Source Charge Qgs 5.7 nC
Gate Drain Charge Qgd 7.2 nC
Switching Characteristics
Turn on Delay Time td(on) VDS=300V, ID=7A, RG=10Ω (Note1,2) 15.2 ns
Turn on Rise Time tr 33.4 ns
Turn Off Delay Time td(off) 53.6 ns
Turn Off Fall Time tf 31 ns
Source Drain Diode Characteristics
Source drain current (Body Diode) ISD 7 A
Drain-Source Diode Forward Voltage VSD IS=7A, VGS=0V 1.5 V
Pulsed Current IS 28 A
Body Diode Reverse Recovery Time trr VR=300V, IF=7A, -diF/dt =100A/μs 0.85 μs
Body Diode Reverse Recovery Charge Qrr 2.1 μC

2507221720_MDD-Microdiode-Semiconductor-MDD7N60F_C49382975.pdf

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