Power MOSFET MIRACLE POWER MPF13N65 650V 13A Continuous Drain Current Low On Resistance for E Bike Charger Designs
Key Attributes
Model Number:
MPF13N65
Product Custom Attributes
Drain To Source Voltage:
650V
Current - Continuous Drain(Id):
13A
Operating Temperature -:
-55℃~+150℃
RDS(on):
750mΩ@10V,6.5A
Gate Threshold Voltage (Vgs(th)):
4V@250uA
Type:
-
Reverse Transfer Capacitance (Crss@Vds):
7pF
Number:
1 N-channel
Input Capacitance(Ciss):
2.022nF
Output Capacitance(Coss):
170pF
Pd - Power Dissipation:
44W
Gate Charge(Qg):
40.5nC@10V
Mfr. Part #:
MPF13N65
Package:
TO-220F
Product Description
Product Overview
The MPF13N65 is an N-Channel Power MOSFET from Miracle Technology Co., Ltd., designed for high-performance applications. It features a 650V breakdown voltage, a continuous drain current of 13A, and a low on-resistance of 0.60 (typ.) at VGS = 10V. This MOSFET is characterized by low Crss and fast switching speeds, making it suitable for applications such as adapters, LCD panel power supplies, E-bike chargers, and switching mode power supplies. It is 100% avalanche tested for enhanced reliability.
Product Attributes
- Brand: Miracle Technology Co., Ltd.
- Product Line: MPF Series
- Technology: N-Channel Power MOSFET
- Package: TO-220F
Technical Specifications
| Parameter | Test Condition | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|
| General Features | |||||
| Drain-Source Voltage | 650 | V | |||
| Gate-Source Voltage | 30 | V | |||
| Drain Current-Continuous (TC =25C) | 13 | A | |||
| Drain Current-Continuous (TC =100C) | 7.8 | A | |||
| Drain Current-Pulsed | 52 | A | |||
| Maximum Power Dissipation (@ TJ =25C) | 44 | W | |||
| Single Pulsed Avalanche Energy | 550 | mJ | |||
| Operating and Store Temperature Range | -55 | 150 | C | ||
| Thermal Characteristics | |||||
| Thermal Resistance, Junction-Case (Max.) | 2.84 | C/W | |||
| Thermal Resistance Junction-Ambient (Max) | 62.5 | C/W | |||
| Off Characteristics (TJ = 25C) | |||||
| Drain-Source Breakdown Voltage | VGS = 0V, ID = 250A | 650 | - | - | V |
| Zero Gate Voltage Drain Current | VDS = 650V, VGS = 0V | - | - | 1 | A |
| Forward Gate Body Leakage Current | VDS = 0V, VGS = 30V | - | - | 100 | nA |
| On Characteristics (TJ = 25C) | |||||
| Gate Threshold Voltage | VDS = VGS, ID =250A | 2 | - | 4 | V |
| Static Drain-Source On-Resistance | VGS = 10V, ID =6.5A | - | 0.60 | 0.75 | |
| Dynamic Characteristics (TJ = 25C) | |||||
| Input Capacitance | VDS = 25V, VGS = 0V, f = 1.0MHz | - | 2022 | - | pF |
| Output Capacitance | - | 170 | - | pF | |
| Reverse Transfer Capacitance | - | 7 | - | pF | |
| Switching Characteristics (TJ = 25C) | |||||
| Turn-On Delay Time | VDD = 325V, ID =12A, RG = 10,VGS=10V | - | 29 | - | ns |
| Turn-On Rise Time | - | 27 | - | ns | |
| Turn-Off Delay Time | - | 65 | - | ns | |
| Turn-Off Fall Time | - | 46 | - | ns | |
| Total Gate Charge | VDS = 520V, ID =12A, VGS = 10V | - | 40.5 | - | nC |
| Gate-Source Charge | - | 10.3 | - | nC | |
| Gate-Drain Charge | - | 14.5 | - | nC | |
| Drain-Source Diode Characteristics | |||||
| Drain-Source Diode Forward Continuous Current | VGS = 0V | - | - | 13 | A |
| Maximum Pulsed Current | VGS = 0V | - | - | 52 | A |
| Drain-Source Diode Forward Voltage | VGS = 0V, IS = 13A | - | - | 1.5 | V |
| Reverse Recovery Time | IS=13A,Tj = 25 dIF/dt=100A/us, VGS=0V | - | 650 | - | ns |
| Reverse Recovery Charge | - | 4.29 | - | nC | |
2410122015_MIRACLE-POWER-MPF13N65_C17701992.pdf
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