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quality High Current N Channel MOSFET MIRACLE POWER MU6888D 68V 88A Low RDS On Suitable For PWM Applications factory
quality High Current N Channel MOSFET MIRACLE POWER MU6888D 68V 88A Low RDS On Suitable For PWM Applications factory

High Current N Channel MOSFET MIRACLE POWER MU6888D 68V 88A Low RDS On Suitable For PWM Applications

Key Attributes
Model Number: MU6888D
Product Custom Attributes
Drain To Source Voltage:
68V
Current - Continuous Drain(Id):
88A
RDS(on):
11mΩ@6V
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
4V@250uA
Type:
N-Channel
Pd - Power Dissipation:
109W
Gate Charge(Qg):
75nC@10V
Mfr. Part #:
MU6888D
Package:
TO-252
Product Description

Product Overview

The MU6888D is an N-Channel Enhancement Mode MOSFET from Miracle Technology Co., Ltd., designed for high-performance applications. It features a 68V drain-source voltage and a continuous drain current of 88A, with a low on-resistance (RDS(on)) of 6.0m (Typ.) at VGS = 10V. This MOSFET offers excellent RDS(on) and low gate charge, making it suitable for load switching, PWM applications, and power management. It is 100% EAS guaranteed and complies with RoHS standards, being halogen-free.

Product Attributes

  • Brand: Miracle Technology Co., Ltd.
  • Product Type: N-Channel Enhancement Mode MOSFET
  • Compliance: Halogen-free; RoHS-compliant

Technical Specifications

Symbol Parameter Test Condition Min. Typ. Max. Unit
Absolute Maximum Ratings
VDS Drain-Source Voltage 68 V
VGS Gate-Source Voltage ±20 V
ID Drain Current-Continuous (TC = 25°C) 88 A
ID Drain Current-Continuous (TC = 100°C) 54 A
IDM Drain Current-Pulsed 320 A
PD Power Dissipation (TC = 25°C) 109 W
EAS Single Pulsed Avalanche Energy 306 mJ
TJ, TSTG Operating and Store Temperature Range -55 150 °C
Thermal Characteristics
RθJC Thermal Resistance, Junction to Case 1.15 °C/W
RθJA Thermal Resistance, Junction to Ambient 62.5 °C/W
Electrical Characteristics (TJ = 25°C unless otherwise noted)
Off Characteristics
BVDSS Drain-Source Breakdown Voltage VGS = 0V, ID = 250μA 68 - - V
IDSS Zero Gate Voltage Drain Current VDS = 68V, VGS = 0V - - 1.0 μA
IGSS Forward Gate Body Leakage Current VDS = 0V, VGS = ±20V - - ±100 nA
On Characteristics
VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250μA 2.0 - 4.0 V
RDS(on) Static Drain-Source On-Resistance VGS = 10V, ID = 40A - 6.0 7.8 mΩ
RDS(on) Static Drain-Source On-Resistance VGS = 6.0V, ID = 30A - 8.5 11 mΩ
Dynamic Characteristics
RG Gate Resistance VDS = VGS = 0V, f = 1.0MHz - 2.0 - Ω
Ciss Input Capacitance VDS = 25V, VGS = 0V, f = 1.0MHz - 3601 - pF
Coss Output Capacitance - 318 - pF
Crss Reverse Transfer Capacitance - 299 - pF
Switching Characteristics
td(on) Turn-On Delay Time VDD = 35V, VGS = 10V, ID = 40A, RGEN = 4.7Ω - 20 - ns
tr Turn-On Rise Time - 51 - ns
td(off) Turn-Off Delay Time - 50 - ns
tf Turn-Off Fall Time - 22 - ns
Qg Total Gate Charge VDS = 35V, VGS = 0 to 10V, ID = 40A - 75 - nC
Qgs Gate-Source Charge - 26 - nC
Qgd Gate-Drain Charge - 20 - nC
Drain-Source Diode Characteristics
IS Drain-Source Diode Forward Continuous Current VG = VD = 0V, Force Current - - 88 A
ISM Maximum Pulsed Current - - 320 A
VSD Drain-Source Diode Forward Voltage VGS = 0V, IS = 30A - - 1.1 V
Trr Body Diode Reverse Recovery Time IF = 20A, dIF/dt = 100A/μs - 23 - ns
Qrr Body Diode Reverse Recovery Charge IF = 20A, dIF/dt = 100A/μs - 16 - nC

2504151445_MIRACLE-POWER-MU6888D_C47361194.pdf

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