Metallurgically Bonded MICROCHIP 1N5712 Schottky Diode with Qualified MILPRF19500 Certification Levels
Key Attributes
Model Number:
1N5712
Product Custom Attributes
Reverse Leakage Current (Ir):
150nA@16V
Voltage - DC Reverse (Vr) (Max):
20V
Voltage - Forward(Vf@If):
1V@35mA
Current - Rectified:
75mA
Mfr. Part #:
1N5712
Package:
DO-35
Product Description
Product Overview
This Schottky barrier diode series, featuring metallurgically bonded construction and military-grade qualifications for high-reliability applications, is available in a hermetically sealed DO-35 glass package. It offers low reverse leakage characteristics and a small size suitable for high-density mounting. The series includes JEDEC registered numbers and is available in various reliability levels and RoHS compliant versions for commercial grades.
Product Attributes
- Brand: Microsemi Corporation
- Certifications: Qualified per MIL-PRF-19500/444 (JAN, JANTX, JANTXV levels)
- Material: Metallurgically bonded
- Package: DO-35 (DO-204AH), UB (surface mount), DO-213AA (surface mount)
- RoHS Compliant: Available on commercial grade versions
- ESD Sensitive: Class 1
Technical Specifications
| Type Number | Working Peak Reverse Voltage (VRWM) | Breakdown Voltage (V(BR) @ 10 A) | Forward Voltage (VF @ IF) | Reverse Leakage Current (IR @ VR) | Capacitance (C @ VR=0V, f=1MHz) | Average Rectified Output Current (IO) |
|---|---|---|---|---|---|---|
| 1N5711-1 | 50 V | 70 V | 0.41 V @ 1 mA | 200 nA @ 50 V | 2.0 pF | 33 mA (1) |
| 1N5712-1 | 16 V | 20 V | 0.41 V @ 1 mA | 150 nA @ 16 V | 2.0 pF | 75 mA (2) |
| 1N6857-1 | 16 V | 20 V | 0.35 V @ 1 mA | 150 nA @ 16 V | 4.5 pF | 150 mA (3) |
| 1N6858-1 | 50 V | 70 V | 0.36 V @ 1 mA | 200 nA @ 50 V | 4.5 pF | 75 mA (2) |
| DSB2810 | 16 V | 20 V | 0.41 V @ 1 mA | 100 nA @ 15 V | 2.0 pF | 75 mA (2) |
| DSB5712 | 16 V | 20 V | 0.41 V @ 1 mA | 150 nA @ 16 V | 2.0 pF | 75 mA (2) |
2410311237_MICROCHIP-1N5712_C3312832.pdf
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