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quality Nexperia BC847BV 115 NPN transistor designed for switching applications in small form factor package factory
quality Nexperia BC847BV 115 NPN transistor designed for switching applications in small form factor package factory

Nexperia BC847BV 115 NPN transistor designed for switching applications in small form factor package

Key Attributes
Model Number: BC847BV,115
Product Custom Attributes
Emitter-Base Voltage(Vebo):
5V
Current - Collector Cutoff:
5uA
Pd - Power Dissipation:
300mW
Transition Frequency(fT):
100MHz
Type:
NPN
Number:
2 NPN
Current - Collector(Ic):
100mA
Collector - Emitter Voltage VCEO:
45V
Operating Temperature:
-65℃~+150℃
Mfr. Part #:
BC847BV,115
Package:
SOT-666-6
Product Description

Product Overview

The Nexperia BC847BV is an NPN general-purpose double transistor designed for switching and amplification applications. Housed in an ultra-small SOT666 flat lead plastic package, this transistor offers a total power dissipation of 300 mW and features very low collector capacitance. Its straight leads ensure excellent coplanarity and improved thermal behavior, reducing the need for multiple components and saving board space. The BC847BV is the PNP complement to the BC857BV.

Product Attributes

  • Brand: Nexperia
  • Product Type: NPN general purpose double transistor
  • Complementary PNP Transistor: BC857BV
  • Package Type: SOT666
  • Package Description: Plastic, surface-mounted package; 6 leads; 0.5 mm pitch; 1.6 mm x 1.2 mm x 0.55 mm body
  • Marking Code: 1F

Technical Specifications

Symbol Parameter Conditions Min Typ Max Unit
Per transistor
VCEO Collector-emitter voltage Open base - - 45 V
IC Collector current - - - 100 mA
hFE DC current gain VCE = 5 V; IC = 2 mA; Tamb = 25 C 200 - 450 -
VCBO Collector-base voltage Open emitter - - 50 V
VEBO Emitter-base voltage Open collector - - 5 V
ICM Peak collector current - - - 200 mA
IBM Peak base current tp 1 ms - - 200 mA
Ptot Total power dissipation Tamb 25 C [1] - - 200 mW
Tj Junction temperature - - - 150 C
Tamb Ambient temperature - -65 - 150 C
Tstg Storage temperature - -65 - 150 C
Per device
Ptot Total power dissipation Tamb 25 C [1] - - 300 mW
Thermal characteristics
Per transistor
Rth(j-a) Thermal resistance from junction to ambient [1] [2] - - 625 K/W
Per device
Rth(j-a) Thermal resistance from junction to ambient [1] [2] - - 416 K/W
Characteristics
Per transistor
ICBO Collector-base cut-off current VCB = 30 V; IE = 0 A; Tamb = 25 C - - 15 nA
ICBO Collector-base cut-off current VCB = 30 V; IE = 0 A; Tj = 150 C - - 5 A
IEBO Emitter-base cut-off current VEB = 5 V; IC = 0 A; Tamb = 25 C - - 100 nA
hFE DC current gain VCE = 5 V; IC = 2 mA; Tamb = 25 C 200 - 450 -
hFE DC current gain IC = 10 mA; IB = 0.5 mA; Tamb = 25 C - - 100 -
VCEsat Collector-emitter saturation voltage IC = 100 mA; IB = 5 mA; pulsed; tp 300 s; 0.02; Tamb = 25 C - - 300 mV
VBEsat Base-emitter saturation voltage IC = 10 mA; IB = 0.5 mA; Tamb = 25 C - 755 - mV
VBE Base-emitter voltage VCE = 5 V; IC = 2 mA; Tamb = 25 C 580 655 700 mV
Cc Collector capacitance VCB = 10 V; IE = 0 A; ie = 0 A; f = 1 MHz; Tamb = 25 C - - 1.5 pF
Ce Emitter capacitance VEB = 500 mV; IC = 0 A; ic = 0 A; f = 1 MHz; Tamb = 25 C - 11 - pF
fT Transition frequency VCE = 5 V; IC = 10 mA; f = 100 MHz; Tamb = 25 C 100 - - MHz

[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[2] Reflow soldering is the only recommended soldering method.

Dimensions:
Package Outline SOT666: 1.6 mm x 1.2 mm x 0.55 mm

Applications:
General purpose switching and amplification.


2410121943_Nexperia-BC847BV-115_C455062.pdf

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