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quality Nexperia BC847DS115 Transistor Pair Featuring Low Collector Capacitance and Matched Gain for Switching factory
quality Nexperia BC847DS115 Transistor Pair Featuring Low Collector Capacitance and Matched Gain for Switching factory

Nexperia BC847DS115 Transistor Pair Featuring Low Collector Capacitance and Matched Gain for Switching

Key Attributes
Model Number: BC847DS,115
Product Custom Attributes
Emitter-Base Voltage(Vebo):
6V
Current - Collector Cutoff:
15nA
Pd - Power Dissipation:
380mW
Transition Frequency(fT):
100MHz
Type:
NPN
Number:
2 NPN
Current - Collector(Ic):
100mA
Collector - Emitter Voltage VCEO:
45V
Operating Temperature:
-55℃~+150℃
Mfr. Part #:
BC847DS,115
Package:
SC-74
Product Description

Product Overview

The Nexperia BC847DS is a general-purpose NPN/NPN transistor pair housed in a compact SOT457 (SC-74) SMD plastic package. Designed for switching and amplification applications, this transistor pair offers low collector capacitance and low collector-emitter saturation voltage. Its closely matched current gain, coupled with the absence of mutual interference between transistors, allows for component count reduction and board space savings. The BC847DS is AEC-Q101 qualified, making it suitable for demanding applications.

Product Attributes

  • Brand: Nexperia
  • Package Type: SOT457 (SC-74)
  • Certifications: AEC-Q101 Qualified

Technical Specifications

Symbol Parameter Conditions Min Typ Max Unit
Per transistor
VCEO Collector-emitter voltage Open base - - 45 V
IC Collector current - - - 100 mA
hFE DC current gain VCE = 5 V; IC = 2 mA 200 300 450
VCBO Collector-base voltage Open emitter - - 50 V
VEBO Emitter-base voltage Open collector - - 6 V
ICM Peak collector current Single pulse; tp 1 ms - - 200 mA
IBM Peak base current Single pulse; tp 1 ms - - 200 mA
Ptot Total power dissipation Tamb 25 C [1] - - 250 mW
Tj Junction temperature - - - 150 C
Tamb Ambient temperature - -55 - 150 C
Tstg Storage temperature - -65 - 150 C
Rth(j-a) Thermal resistance junction to ambient in free air [1] - - 500 K/W
Rth(j-sp) Thermal resistance junction to solder point - - - 250 K/W
ICBO Collector-base cut-off current VCB = 30 V; IE = 0 A - - 15 nA
ICBO Collector-base cut-off current VCB = 30 V; IE = 0 A; Tj = 150 C - - 5 A
IEBO Emitter-base cut-off current VEB = 6 V; IC = 0 A - - 100 nA
hFE DC current gain VCE = 5 V; IC = 10 A - 280 -
hFE DC current gain VCE = 5 V; IC = 2 mA 200 300 450
VCEsat Collector-emitter saturation voltage IC = 10 mA; IB = 0.5 mA - 55 100 mV
VCEsat Collector-emitter saturation voltage IC = 100 mA; IB = 5 mA - 200 300 mV
VBEsat Base-emitter saturation voltage IC = 10 mA; IB = 0.5 mA - 755 850 mV
VBEsat Base-emitter saturation voltage IC = 100 mA; IB = 5 mA - 1000 - mV
VBE Base-emitter voltage VCE = 5 V; IC = 2 mA 580 650 700 mV
VBE Base-emitter voltage VCE = 5 V; IC = 10 mA - - 770 mV
Cc Collector capacitance VCB = 10 V; IE = 0 A; f = 1 MHz - 1.9 - pF
Ce Emitter capacitance VEB = 0.5 V; IC = 0 A; f = 1 MHz - 11 - pF
fT Transition frequency VCE = 5 V; IC = 10 mA; f = 100 MHz 100 - - MHz
NF Noise figure VCE = 5 V; IC = 0.2 mA; RS = 2 k; f = 10 Hz to 15.7 kHz - 1.9 - dB
NF Noise figure VCE = 5 V; IC = 0.2 mA; RS = 2 k; f = 1 kHz; B = 200 Hz - 3.1 - dB
Per device
Ptot Total power dissipation Tamb 25 C [1] - - 380 mW
Rth(j-a) Thermal resistance junction to ambient in free air [1] - - 328 K/W

[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard footprint.


2411121132_Nexperia-BC847DS-115_C549489.pdf

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