Nexperia PUMD3 115 Resistor Equipped Double Transistor NPN PNP in SOT363 Package for Circuit Design
Key Attributes
Model Number:
PUMD3,115
Product Custom Attributes
Input Resistor:
10kΩ
Resistor Ratio:
1
Collector - Emitter Voltage VCEO:
50V
Mfr. Part #:
PUMD3,115
Package:
TSSOP-6(SOT-363)
Product Description
Product Overview
The Nexperia PUMD3 is a resistor-equipped double transistor (RET) featuring both NPN and PNP configurations within a compact SOT363 (SC-88) SMD plastic package. This device offers a 100 mA output current capability and incorporates built-in bias resistors, simplifying circuit design, reducing component count, and lowering pick-and-place costs. It is ideal for digital applications in automotive and industrial segments, serving as a cost-saving alternative for BC847/BC857 series in digital applications, controlling IC inputs, and switching loads.
Product Attributes
- Brand: Nexperia
- Package Type: SOT363 (SC-88)
- Transistor Type: NPN/PNP Resistor-Equipped Double Transistor (RET)
Technical Specifications
| Symbol | Parameter | Conditions | Min | Typ | Max | Unit |
|---|---|---|---|---|---|---|
| Per transistor, for the PNP transistor with negative polarity | ||||||
| VCEO | Collector-emitter voltage | open base | - | - | 50 | V |
| IO | Output current | - | - | - | 100 | mA |
| R1 | Bias resistor 1 (input) | [1] | 7 | 10 | 13 | k |
| R2/R1 | Bias resistor ratio | [1] | 0.8 | 1 | 1.2 | - |
| VCBO | Collector-base voltage | open emitter | - | - | 50 | V |
| VEBO | Emitter-base voltage | open collector | - | - | 10 | V |
| VI | Input voltage TR1 | - | - | - | -10 | V |
| VI | Input voltage TR2 | - | - | - | -40 | V |
| Ptot | Total power dissipation | Tamb 25 C [1] | - | - | 200 | mW |
| Per device | ||||||
| Ptot | Total power dissipation | Tamb 25 C [1] | - | - | 300 | mW |
| Tj | Junction temperature | - | - | - | 150 | C |
| Tamb | Ambient temperature | - | -65 | - | 150 | C |
| Tstg | Storage temperature | - | -65 | - | 150 | C |
| Thermal characteristics | ||||||
| Per transistor | ||||||
| Rth(j-a) | Thermal resistance from junction to ambient in free air | [1] | - | - | 625 | K/W |
| Per device | ||||||
| Rth(j-a) | Thermal resistance from junction to ambient in free air | [1] | - | - | 417 | K/W |
| Characteristics | ||||||
| Per transistor, for the PNP transistor with negative polarity | ||||||
| V(BR)CBO | Collector-base breakdown voltage | IC = 100 A; IE = 0 A; Tamb = 25 C | 50 | - | - | V |
| V(BR)CEO | Collector-emitter breakdown voltage | IC = 2 mA; IB = 0 A; Tamb = 25 C | 50 | - | - | V |
| ICBO | Collector-base cut-off current | VCB = 50 V; IE = 0 A; Tamb = 25 C | - | - | 100 | nA |
| ICEO | Collector-emitter cut-off current | VCE = 30 V; IB = 0 A; Tamb = 25 C | - | - | 100 | nA |
| ICEO | Collector-emitter cut-off current | VCE = 30 V; IB = 0 A; Tj = 150 C | - | - | 5 | A |
| IEBO | Emitter-base cut-off current | VEB = 5 V; IC = 0 mA; Tamb = 25 C | - | - | 400 | A |
| hFE | DC current gain | VCE = 5 V; IC = 5 mA; Tamb = 25 C | 30 | - | - | - |
| VCEsat | Collector-emitter saturation voltage | IC = 10 mA; IB = 0.5 mA; Tamb = 25 C | - | - | 100 | mV |
| VI(off) | Off-state input voltage | VCE = 5 V; IC = 100 A; Tamb = 25 C | - | 1.1 | 0.8 | V |
| VI(on) | On-state input voltage | VCE = 0.3 V; IC = 10 mA; Tamb = 25 C | 2.5 | 1.8 | - | V |
| R1 | Bias resistor 1 (input) | [1] | 7 | 10 | 13 | k |
| R2/R1 | Bias resistor ratio | [1] | 0.8 | 1 | 1.2 | - |
| TR1 (NPN) | ||||||
| Cc | Collector capacitance | VCB = 10 V; IE = 0 A; ie = 0 A; f = 1 MHz; Tamb = 25 C | - | - | 2.5 | pF |
| fT | Transition frequency | VCE = 5 V; IC = 10 mA; f = 100 MHz; Tamb = 25 C [2] | - | 230 | - | MHz |
| TR2 (PNP) | ||||||
| Cc | Collector capacitance | VCB = -10 V; IE = 0 A; ie = 0 A; f = 1 MHz; Tamb = 25 C | - | - | 3 | pF |
| fT | Transition frequency | VCE = -5 V; IC = -10 mA; f = 100 MHz; Tamb = 25 C [2] | - | 180 | - | MHz |
| Package Outline | ||||||
| Package Type | TSSOP6 (SOT363) | - | - | - | - | - |
| Body Dimensions | 2.1 mm x 1.25 mm x 0.95 mm | - | - | - | - | mm |
| Pitch | 0.65 mm | - | - | - | - | mm |
[1] See "Section 11: Test information" for resistor calculation and test conditions.
[2] Characteristics of built-in transistor
2409302134_Nexperia-PUMD3-115_C193527.pdf
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