Power MOSFET Minos IRF3205S suitable for uninterruptible power supplies and high frequency switching
Key Attributes
Model Number:
IRF3205S
Product Custom Attributes
Drain To Source Voltage:
60V
Current - Continuous Drain(Id):
120A
Operating Temperature -:
-55℃~+175℃@(Tj)
RDS(on):
6mΩ@10V,30A
Gate Threshold Voltage (Vgs(th)):
2.8V
Reverse Transfer Capacitance (Crss@Vds):
270pF@30V
Number:
1 N-channel
Input Capacitance(Ciss):
3.7nF@30V
Pd - Power Dissipation:
143W
Gate Charge(Qg):
80nC@10V
Mfr. Part #:
IRF3205S
Package:
TO-263
Product Description
Product Overview
The IRF3205S is an N-Channel Power MOSFET utilizing advanced trench technology. It offers excellent RDS(ON) and low gate charge, making it suitable for a wide range of power switching applications, including hard switched and high-frequency circuits, and uninterruptible power supplies. Key advantages include high ESD capability, high-density cell design for lower Rdson, and fully characterized avalanche voltage and current for good stability and uniformity.
Product Attributes
- Brand: MNS-KX (implied from www.mns-kx.com)
- Certifications: 100% UIS TESTED, 100% DVDS TESTED
Technical Specifications
| Parameter | Symbol | Condition | Min | Typ | Max | Unit |
| Absolute Maximum Ratings | ||||||
| Drain-Source Voltage | VDS | 60 | V | |||
| Gate-Source Voltage | VGS | ±20 | V | |||
| Drain Current-Continuous | ID | 120 | A | |||
| Drain Current-Pulsed | IDM | (Note 1) | 380 | A | ||
| Maximum Power Dissipation | PD | (Tc=25℃) | 143 | W | ||
| Single pulse avalanche energy | EAS | (Note 2) | 260 | mJ | ||
| Operating Junction and Storage Temperature Range | TJ,TSTG | -55 | To | 175 | ℃ | |
| Thermal Characteristic | ||||||
| Thermal Resistance,Junction-to-Case | RθJC | 1.05 | ℃/W | |||
| Thermal Resistance,Junction-to-Ambient | RθJA | 62.5 | ℃/W | |||
| Off Characteristics | ||||||
| Drain-Source Breakdown Voltage | BVDSS | VGS=0V, ID=250μA | 60 | - | - | V |
| Zero Gate Voltage Drain Current | IDSS | VDS=60V,VGS=0V | - | - | 1 | μA |
| Gate-Body Leakage Current | IGSS | VGS=±20V,VDS=0V | - | - | ±100 | nA |
| On Characteristics | ||||||
| Gate Threshold Voltage | VGS(th) | VDS=VGS,ID=250μA | 2 | 2.8 | 4 | V |
| Drain-Source On-State Resistance | RDS(ON) | VGS=10V, ID=30A (Note 3) | - | 6.0 | 7.0 | mΩ |
| Forward Transconductance | gFS | VDS=5V,ID=15A | - | 15 | - | S |
| Dynamic Characteristics | ||||||
| Input Capacitance | Clss | VDS=30V,VGS=0V, f=1.0MHz | - | 3700 | - | pF |
| Output Capacitance | Coss | - | 345 | - | pF | |
| Reverse Transfer Capacitance | Crss | - | 270 | - | pF | |
| Switching Characteristics (Note 4) | ||||||
| Turn-on Delay Time | td(on) | VDD=30V, ID=30A, VGS=10V,RGEN=3Ω | - | 19 | - | nS |
| Turn-on Rise Time | tr | - | 36 | - | nS | |
| Turn-Off Delay Time | td(off) | - | 45 | - | nS | |
| Turn-Off Fall Time | tf | - | 24 | - | nS | |
| Total Gate Charge | Qg | VDS=48V,ID=30A, VGS=10V | - | 80 | - | nC |
| Gate-Source Charge | Qgs | - | 25 | - | nC | |
| Gate-Drain Charge | Qg d | - | 22 | - | nC | |
| Drain-Source Diode Characteristics | ||||||
| Diode Forward Voltage | VSD | VGS=0V,IS=1A | - | - | 1.2 | V |
2410122013_Minos-IRF3205S_C7587857.pdf
Related Products
Glass passivated chip diode YONGYUTAI MB8S offering performance in power supply and rectification circuits
Product OverviewThis series of glass passivated chip junction diodes offers a wide range of reverse voltage capabilities from 100V to 1000V, with a forward current of 0.8A and high surge current capability. Designed for surface mount applications, these diodes are suitable for various power supply ...
Dual NPN Transistor XZT MMDT3904 in SOT-363 Package Designed for Amplification and Switching Tasks
Product OverviewThe MMDT3904 is a dual NPN transistor in a SOT-363 package. It is constructed using an epitaxial planar die and is ideal for low power amplification and switching applications.Product AttributesBrand: X T ELECTRONICSModel: MMDT3904Package: SOT-363Type: Dual Transistor (NPN+NPN...
Gallium Nitride Gan Hemts for Broadband Rf Applications Featuring Wolfspeed CGHV40050P Transistor
Product Overview The MACOM CGHV40050 is an unmatched Gallium Nitride (GaN) High Electron Mobility Transistor (HEMT) designed for general-purpose, broadband RF and microwave applications up to 4 GHz. Operating from a 50-volt rail, this device offers high efficiency, high gain, and wide bandwidth ...
YANGJIE MG400HF12MIC2 IGBT module featuring fast switching speeds and low stray inductance for power supplies
Product OverviewThe MG400HF12MIC2 is a high-power IGBT module designed for demanding applications. It features short circuit rating, low stray inductance, and low switching losses, with a VCE(sat) exhibiting a positive temperature coefficient for enhanced reliability. The module offers fast ...
Contact Our Experts And Get A Free Consultation!
Our mission is to offer "High Quality" & "Good Service" & "Fast Delivery" to help our clients to gain more profits.
