650V silicon N channel MOSFET Minos MLS65R190F with 20A continuous current and low conduction losses
Key Attributes
Model Number:
MLS65R190F
Product Custom Attributes
Drain To Source Voltage:
650V
Current - Continuous Drain(Id):
20A
Operating Temperature -:
-
RDS(on):
230mΩ@10V
Gate Threshold Voltage (Vgs(th)):
4V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
3.7pF
Number:
1 N-channel
Output Capacitance(Coss):
67pF
Pd - Power Dissipation:
43W
Input Capacitance(Ciss):
1.197nF
Gate Charge(Qg):
38nC
Mfr. Part #:
MLS65R190F
Package:
TO-220F
Product Description
Product Overview
The MLS65R190F is a silicon N-channel Enhanced MOSFET utilizing advanced Super Junction technology. This design significantly reduces conduction losses and enhances switching performance, making it ideal for Switch Mode Power Supplies (SMPS), high-speed switching, and general-purpose applications. Key features include a VDS of 650V, ID of 20A, and RDS(ON) of less than 0.23 at VGS=10V.
Product Attributes
- Brand: MNS-KX
- Origin: Shenzhen, China
- Material: Silicon
- Package: TO-220F
Technical Specifications
| Parameter | Test Conditions | Min | Typ | Max | Unit |
| VDS (Drain-to-Source Breakdown Voltage) | 650 | V | |||
| ID (Drain Current, continuous) | Tc=25 | 20 | A | ||
| IDM (Drain Current, pulsed) | 80 | A | |||
| VGS (Gate to Source Voltage) | 30 | V | |||
| Ptot (Total Dissipation) | Tc=25 | 43 | W | ||
| Tj Max. (Max. Operating Junction Temperature) | 150 | ||||
| Eas (Single Pulse Avalanche Energy) | 806 | mJ | |||
| VDS (Drain-source Voltage) | VGS=0V, ID=250A | 650 | V | ||
| RDS(on) (Static Drain-to-Source on-Resistance) | VGS=10V,ID=10A | 0.19 | 0.23 | ||
| VGS(th) (Gated Threshold Voltage) | VDS=VGS, D=250A | 2 | 4 | V | |
| IDSS (Drain-Source Leakage Current) | VDS=650V, VGS= 0V | 1.0 | A | ||
| IGSS(F) (Gate-Source Forward Leakage) | VGS=+30V | 100 | nA | ||
| IGSS(R) (Gate-Source Reverse Leakage) | VGS=-30V | -100 | nA | ||
| Ciss (Input Capacitance) | VGS = 0V, VDS = 100V, f = 1.0MHz | 1197 | pF | ||
| Coss (Output Capacitance) | 67 | pF | |||
| Crss (Reverse Transfer Capacitance) | 3.7 | pF | |||
| Qg (Total Gate Charge) | ID =20A, VDD =520V, VGS = 10V | 38 | nC | ||
| Qgs (Gate-Source Charge) | 9.0 | nC | |||
| Qgd (Gate-Drain Charge) | 20 | nC | |||
| td(on) (Turn-on Delay Time) | ID =4.0A, VDD =325V, VGS =10V, RG=25 | 20 | nS | ||
| tr (Turn-on Rise Time) | 56 | nS | |||
| td(off) (Turn-off Delay Time) | 106 | nS | |||
| tf (Turn-off Fall Time) | 41 | nS | |||
| IS (Continuous Source Current, Body Diode) | TC=25 C | -- | -- | 20 | A |
| ISM (Maximum Pulsed Current, Body Diode) | -- | -- | 80 | A | |
| VSD (Diode Forward Voltage) | ID=20A, VGS=0V | -- | -- | 1.4 | V |
| Trr (Reverse Recovery Time) | VDD=50V,IF=20A, dIF/dt=100A/s | -- | 214.3 | -- | ns |
| Qrr (Reverse Recovery Charge) | -- | 1.7 | -- | nC |
2410171638_Minos-MLS65R190F_C41433009.pdf
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