High Current Switching Device Minos MPT03N08W N channel MOSFET with Enhanced Double Trench Technology
Key Attributes
Model Number:
MPT03N08W
Product Custom Attributes
Drain To Source Voltage:
85V
Current - Continuous Drain(Id):
275A
RDS(on):
2.3mΩ@10V
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
3V
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
152pF
Output Capacitance(Coss):
1.549nF
Input Capacitance(Ciss):
8.237nF
Pd - Power Dissipation:
357W
Gate Charge(Qg):
138.3nC@10V
Mfr. Part #:
MPT03N08W
Package:
TO-247
Product Description
Product Description
The MPT03N08W is an N-channel Enhanced Power MOSFET utilizing advanced double trench technology. This technology significantly reduces conduction losses, improves switching performance, and enhances avalanche energy. It is an ideal device for Battery Management Systems (BMS) and high current switching applications.
Product Attributes
- Brand: MNS-KX
- Certifications: RoHS
Technical Specifications
| Parameter | Value | Units | Conditions |
| Product Code | MPT03N08-W | ||
| Package | TO-247 | ||
| VDS | 85 | V | |
| RDS(on) | <3 | m | VGS=10V, ID=180A (Typ: 2.3m) |
| ID (Continuous, Package Limited) | 180 | A | |
| IDM (Pulsed Drain Current) | 720 | A | Note1 |
| VGS | 20 | V | |
| EAS (Avalanche Energy) | 900 | mJ | Note2 |
| PD (Power Dissipation) | 357 | W | |
| RJC (Thermal Resistance, Junction-Case) | 0.35 | /W | |
| RJA (Thermal Resistance, Junction-Ambient) | 62.5 | /W | |
| VDSs (Drain-Source Breakdown Voltage) | 85 | V | VGS=0V, ID=250A |
| IDSS (Drain-Source Leakage Current) | 1 | A | VDS=85V, VGS=0V |
| IDSS (@TC=125C) | 100 | A | VDS=68V, VGS=0V |
| IGSS(F) (Gate-Source Forward Leakage) | 100 | nA | VGS=+20V |
| IGSS(R) (Gate-Source Reverse Leakage) | -100 | nA | VGS=-20V |
| RDS(on) (Drain-Source On-Resistance) | 3 | m | VGS=10V, ID=50A |
| VGS(th) (Gate Threshold Voltage) | 4.0 | V | VDS=VGS, ID=250A |
| Ciss (Input Capacitance) | 8237 | pF | VDS=42.5V, VGS=0V, f=1MHz |
| Coss (Output Capacitance) | 1549 | pF | |
| Crss (Reverse Transfer Capacitance) | 152 | pF | |
| Qg (Total Gate Charge) | 138.3 | nC | VDD=42.5V, ID=50A, VGS=10V |
| Qgs (Gate-Source Charge) | 39.5 | nC | |
| Qgd (Gate-Drain Charge) | 36.8 | nC | |
| td(on) (Turn-On Delay Time) | 32 | ns | VDD=42.5V, VGS=10V, RG=3, Resistive Load |
| tr (Rise Time) | 115 | ns | |
| td(off) (Turn-Off Delay Time) | 93 | ns | |
| tf (Fall Time) | 140 | ns | |
| IS (Continuous Source Current) | 180 | A | |
| ISM (Maximum Pulsed Current) | 720 | A | |
| VSD (Diode Forward Voltage) | 1.2 | V | VGS=0V, IS=50A |
| trr (Reverse Recovery Time) | 80 | ns | IS=50A, VGS=0V, di/dt=100A/us |
| Qrr (Reverse Recovery Charge) | 136 | uC |
2509171410_Minos-MPT03N08W_C51933933.pdf
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