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quality N Channel Enhancement Mode MOSFET MIRACLE POWER MSJ001C Suitable for Power Management and Automation factory
quality N Channel Enhancement Mode MOSFET MIRACLE POWER MSJ001C Suitable for Power Management and Automation factory

N Channel Enhancement Mode MOSFET MIRACLE POWER MSJ001C Suitable for Power Management and Automation

Key Attributes
Model Number: MSJ001C
Product Custom Attributes
Drain To Source Voltage:
200V
Current - Continuous Drain(Id):
109A
RDS(on):
10mΩ@10V
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
4.5V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
17pF
Pd - Power Dissipation:
312W
Input Capacitance(Ciss):
8.788nF
Output Capacitance(Coss):
455pF
Gate Charge(Qg):
122nC@10V
Mfr. Part #:
MSJ001C
Package:
TO-220
Product Description

Product Overview

The MSJ001C is an N-Channel Enhancement Mode MOSFET from Miracle Technology Co., Ltd. It features a 200V drain-source voltage, 109A continuous drain current, and a low on-resistance of 8.6m (typ.) at VGS = 10V. This MOSFET offers excellent RDS(on) and low gate charge, making it suitable for applications such as motor driving in power tools, e-vehicles, and robotics, current switching in DC/DC and AC/DC (SR) sub-systems, and power management in telecom, industrial automation, and CE equipment. It is halogen-free, RoHS compliant, and 100% EAS guaranteed.

Product Attributes

  • Brand: Miracle Technology Co., Ltd.
  • Product Type: N-Channel Enhancement Mode MOSFET
  • Compliance: Halogen free; RoHS compliant
  • Testing: 100% EAS Guaranteed

Technical Specifications

Symbol Parameter Test Condition Min. Typ. Max. Unit
Features
Voltage, Current, RDS(on) VGS = 10V - 8.6 m
VDS Drain-Source Voltage - - 200 V
ID Drain Current-Continuous (TC = 25C) - - 109 A
ID Drain Current-Continuous (TC = 100C) - - 69 A
IDM Drain Current-Pulsed - - 436 A
PD Maximum Power Dissipation (TC = 25C) - - 312 W
EAS Single Pulsed Avalanche Energy - - 1225 mJ
TJ, TSTG Operating and Store Temperature Range -55 - 150 C
Thermal Characteristics
RJC Thermal Resistance, Junction to Case - 0.4 - C/W
RJA Thermal Resistance, Junction to Ambient - 63 - C/W
Electrical Characteristics
BVDSS Drain-Source Breakdown Voltage VGS = 0V, ID = 250A 200 - - V
IDSS Zero Gate Voltage Drain Current VDS = 200V, VGS = 0V - - 1.0 A
IGSS Forward Gate Body Leakage Current VDS = 0V, VGS = 20V - - 100 nA
VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250A 2.5 3.3 4.5 V
RDS(on) Static Drain-Source On-Resistance VGS = 10V, ID = 20A - 8.6 10 m
RG Gate Resistance VDS = VGS = 0V, f = 1.0MHz - 7.0 -
Ciss Input Capacitance VDS = 100V, VGS = 0V, f = 1.0MHz - 8788 - pF
Coss Output Capacitance - 455 - pF
Crss Reverse Transfer Capacitance - 17 - pF
td(on) Turn-On Delay Time VDS = 100V, VGS = 10V, RL = 5.0, RG = 6.0 - 30 - ns
tr Turn-On Rise Time - 58 - ns
td(off) Turn-Off Delay Time - 98 - ns
tf Turn-Off Fall Time - 43 - ns
Qg Total Gate Charge VDS = 100V, VGS = 0 to 10V, ID = 20A - 122 - nC
Qgs Gate-Source Charge - 43 - nC
Qgd Gate-Drain Charge - 23 - nC
IS Drain-Source Diode Forward Continuous Current VG = VD = 0V, Force Current - - 109 A
ISM Maximum Pulsed Current - - 436 A
VSD Drain-Source Diode Forward Voltage VGS = 0V, IS = 20A - 0.8 1.2 V
Trr Body Diode Reverse Recovery Time IF = 20A, dIF/dt = 100A/s - 186 - ns
Qrr Body Diode Reverse Recovery Charge IF = 20A, dIF/dt = 100A/s - 743 - nC

2504151445_MIRACLE-POWER-MSJ001C_C47361115.pdf

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