N Channel MOSFET MIRACLE POWER MJF08N65 with 650V Breakdown and Low Typical On Resistance at VGS 10V
Key Attributes
Model Number:
MJF08N65
Product Custom Attributes
Drain To Source Voltage:
650V
Current - Continuous Drain(Id):
8A
RDS(on):
550mΩ@10V
Gate Threshold Voltage (Vgs(th)):
4.2V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
3.6pF
Pd - Power Dissipation:
28W
Input Capacitance(Ciss):
599pF
Output Capacitance(Coss):
76pF
Gate Charge(Qg):
8nC@10V
Mfr. Part #:
MJF08N65
Package:
TO-220F
Product Description
Product Overview
The MJF08N65 is an N-Channel Power MOSFET from Miracle Technology Co., Ltd., featuring advanced Super Junction Technology for easy gate switching control. It offers a 650V breakdown voltage, 8A continuous drain current, and a low typical on-resistance of 0.50 at VGS = 10V. This MOSFET is 100% avalanche tested and is suitable for applications such as PD adaptors, LCD & PDP TVs, LED lighting, and boost PFC switch, single-ended flyback, or two-transistor forward topologies.
Product Attributes
- Brand: Miracle Technology Co., Ltd.
- Product Type: N-Channel Power MOSFET
- Technology: Advanced Super Junction Technology
- Testing: 100% Avalanche Tested
Technical Specifications
| Symbol | Parameter | Test Condition | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|---|
| Features | ||||||
| 650V, 8A, RDS(ON)(Typ.) = 0.50@VGS = 10V | - | - | - | - | ||
| Advanced Super Junction Technology | - | - | - | - | ||
| Easy to Control Gate Switching | - | - | - | - | ||
| 100% Avalanche Tested | - | - | - | - | ||
| Application | ||||||
| PD Adaptor, LCD & PDP TV and LED lighting, Boost PFC switch, single-ended flyback or two-transistor forward topologies | ||||||
| Absolute Maximum Ratings (Tc = 25C unless otherwise noted) | ||||||
| VDS | Drain-Source Voltage | a | - | - | 650 | V |
| VGS | Gate-Source Voltage | - | - | 30 | V | |
| ID | Drain Current-Continuous, TC =25C | - | - | 8 | A | |
| IDM | Drain Current-Pulsed | b | - | - | 24 | A |
| PD | Maximum Power Dissipation @ TJ =25C | - | - | 28 | W | |
| dv/dt | Peak Diode Recovery dv/dt | - | - | 15 | V/ns | |
| EAS | Single Pulsed Avalanche Energy | d | - | - | 211 | mJ |
| TJ, TSTG | Operating and Store Temperature Range | -55 | - | 150 | C | |
| Thermal Characteristics | ||||||
| RJC | Thermal Resistance, Junction to Case | - | 4.5 | - | C/W | |
| RJA | Thermal Resistance, Junction to Ambient | - | 80 | - | C/W | |
| Electrical Characteristics (TJ = 25C unless otherwise noted) | ||||||
| Off Characteristics | ||||||
| BVDSS | Drain-Source Breakdown Voltage | VGS = 0V, ID = 250A | 650 | - | - | V |
| IDSS | Zero Gate Voltage Drain Current | VDS = 650V, VGS = 0V | - | - | 1 | A |
| IGSS | Forward Gate Body Leakage Current | VDS = 0V, VGS = 30V | - | - | 100 | nA |
| On Characteristics | ||||||
| VGS(th) | Gate Threshold Voltage | VDS = VGS, ID = 250A | 2.8 | - | 4.2 | V |
| RDS(on) | Static Drain-Source On- Resistance | c VGS = 10V, ID = 4A | - | 0.50 | 0.55 | |
| Dynamic Characteristics | ||||||
| Rg | Gate Resistance | f = 1.0MHz | - | 25 | - | |
| Ciss | Input Capacitance | VDS = 50V, VGS = 0V, f = 10kHz | - | 599 | - | pF |
| Coss | Output Capacitance | - | 76 | - | pF | |
| Crss | Reverse Transfer Capacitance | - | 3.6 | - | pF | |
| On Characteristics | ||||||
| td(on) | Turn-On Delay Time | VDD = 400V, ID = 3A, VGS= 13V, RG = 6.8 | - | 26.8 | - | ns |
| tr | Turn-On Rise Time | - | 24.8 | - | ns | |
| td(off) | Turn-Off Delay Time | - | 127.6 | - | ns | |
| tf | Turn-Off Fall Time | - | 21.2 | - | ns | |
| Qg | Total Gate Charge | VDS = 400V, ID = 3A, VGS = 0 to 10V | - | 8.0 | - | nC |
| Qgs | Gate-Source Charge | - | 2.6 | - | - | |
| Qgd | Gate-Drain Charge | - | 1.7 | - | - | |
| Drain-Source Diode Characteristics | ||||||
| IS | Drain-Source Diode Forward Continuous Current | VGS = 0V | - | - | 8 | A |
| ISM | Maximum Pulsed Current | VGS = 0V | - | - | 24 | A |
| VSD | Drain-Source Diode Forward Voltage | VGS = 0V, IF = 1A | - | 0.76 | - | V |
| Trr | Body Diode Reverse Recovery Time | VR = 400V, IF = 3A, dIF/dt = 100A/s | - | 174 | - | ns |
| Qrr | Body Diode Reverse Recovery Charge | VR = 400V, IF = 3A, dIF/dt = 100A/s | - | 1.2 | - | C |
Notes:
a. TJ = +25 to +150
b. Repetitive rating; pulse width limited by maximum junction temperature.
c. Pulse width300s; duty cycle2%
d. L = 10mH, VDD = 100V, IAS = 6.5A, RG = 25 Starting TJ = 25 .
2504151445_MIRACLE-POWER-MJF08N65_C47361040.pdf
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