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quality Load Switching with MIRACLE POWER MU2302T N Channel Enhancement Mode MOSFET Featuring Low Gate Charge factory
quality Load Switching with MIRACLE POWER MU2302T N Channel Enhancement Mode MOSFET Featuring Low Gate Charge factory

Load Switching with MIRACLE POWER MU2302T N Channel Enhancement Mode MOSFET Featuring Low Gate Charge

Key Attributes
Model Number: MU2302T
Product Custom Attributes
Drain To Source Voltage:
20V
Current - Continuous Drain(Id):
4A
RDS(on):
28mΩ@4.5V
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
1V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
55pF
Number:
1 N-channel
Output Capacitance(Coss):
64pF
Pd - Power Dissipation:
1.2W
Input Capacitance(Ciss):
445pF
Gate Charge(Qg):
6nC
Mfr. Part #:
MU2302T
Package:
SOT-23
Product Description

Product Overview

The MU2302T is an N-Channel Enhancement Mode MOSFET from Miracle Technology Co., Ltd., featuring advanced trench technology for excellent RDS(ON) and low gate charge. It is designed for applications such as load switching, PWM applications, and power management. This lead-free component offers 20V drain-source voltage and continuous drain current of 4.0A at 25C, with low static drain-source on-resistance.

Product Attributes

  • Brand: Miracle Technology Co., Ltd.
  • Product Type: N-Channel Enhancement Mode MOSFET
  • Technology: Advanced Trench Technology
  • Certifications: Lead Free
  • Package: SOT-23

Technical Specifications

Symbol Parameter Test Condition Min. Typ. Max. Unit
Absolute Maximum Ratings
VDS Drain-Source Voltage Tc = 25C unless otherwise noted - - 20 V
VGS Gate-Source Voltage Tc = 25C unless otherwise noted - - 12 V
ID Drain Current-Continuous TA = 25C - - 4.0 A
ID Drain Current-Continuous TA = 100C - - 2.5 A
IDM Drain Current-Pulsed a - - 16 A
PD Maximum Power Dissipation @ TA = 25C - - 1.2 W
TSTG Store Temperature Range -55 - 150 C
Thermal Characteristics
RJA Thermal Resistance Junction-Ambient - - 103 C/W
Electrical Characteristics (TJ = 25C unless otherwise noted)
Off Characteristics
BVDSS Drain-Source Breakdown Voltage VGS = 0V, ID = 250A 20 - - V
IDSS Zero Gate Voltage Drain Current VDS = 20V, VGS = 0V - - 1.0 A
IGSS Forward Gate Body Leakage Current VDS = 0V, VGS = 12V - - 100 nA
On Characteristics
VGS(th) Gate Threshold Voltage VDS = VGS, ID =250A 0.5 0.75 1.0 V
RDS(on) Static Drain-Source On-Resistance VGS = 4.5V, ID = 3A - 22 28 m
RDS(on) Static Drain-Source On-Resistance VGS = 2.5V, ID = 3A - 26 35 m
Dynamic Characteristics
Ciss Input Capacitance VDS = 10V, VGS = 0V, f = 1.0MHz - 445 - pF
Coss Output Capacitance - 64 - pF
Crss Reverse Transfer Capacitance - 55 - pF
Qg Total Gate Charge VGS = 0 to 4.5V, VDS =10V, ID=2A - 6.0 - nC
Qgs Gate Source Charge - 1.0 - nC
Qgd Gate Drain Charge - 1.5 - nC
Switching Characteristics
td(on) Turn-On Delay Time VDD=15V, VGS = 4.5V, ID=3A, RGEN=3 - 4 - ns
tr Turn-On Rise Time - 13 - ns
td(off) Turn-Off Delay Time - 65 - ns
tf Turn-Off Fall Time - 33 - ns
Drain-Source Diode Characteristics
IS Drain-Source Diode Forward Continuous Current - - 4 A
ISM Maximum Pulsed Diode Forward Current - - 16 A
VSD Drain to Source Diode Forward Voltage VGS = 0V, ISD = 4A - - 1.2 V
Trr Body Diode Reverse Recovery Time di/dt=60A/us, IF=2A - 6.0 - ns
Qrr Body Diode Reverse Recovery Charge - 0.8 - nC

2411220026_MIRACLE-POWER-MU2302T_C34373743.pdf

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