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quality Load Switching and PWM Control MOSFET MIRACLE POWER MU3012Y with Advanced Trench Technology Features factory
quality Load Switching and PWM Control MOSFET MIRACLE POWER MU3012Y with Advanced Trench Technology Features factory

Load Switching and PWM Control MOSFET MIRACLE POWER MU3012Y with Advanced Trench Technology Features

Key Attributes
Model Number: MU3012Y
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
80A
RDS(on):
3.4mΩ@10V
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
2.5V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
302pF
Output Capacitance(Coss):
372pF
Input Capacitance(Ciss):
3.089nF
Pd - Power Dissipation:
24.5W
Gate Charge(Qg):
58nC@10V
Mfr. Part #:
MU3012Y
Package:
PDFN-8L(5x6)
Product Description

Product Overview

The MU3012Y is an N-Channel Enhancement Mode MOSFET from Miracle Technology Co., Ltd., engineered with Advanced Trench Technology. It offers excellent RDS(ON) and low gate charge, making it suitable for demanding applications such as load switching, PWM applications, and power management. This MOSFET is 100% EAS guaranteed and features a 30V drain-source voltage and a continuous drain current of 80A.

Product Attributes

  • Brand: Miracle Technology Co., Ltd.
  • Technology: Advanced Trench Technology
  • Channel Type: N-Channel Enhancement Mode
  • Package Information: PDFN5*6

Technical Specifications

Symbol Parameter Test Condition Min. Typ. Max. Unit
General Features
Voltage 30 V
Current 80 A
RDS(ON) Static Drain-Source On-Resistance VGS = 10V, ID = 30A 2.6 3.4 m
EAS Single Pulsed Avalanche Energy L = 0.5mH, VDD = 25V, IAS = 26A, RG = 25 Starting TJ = 25 . 169 mJ
Absolute Maximum Ratings
VDS Drain-Source Voltage 30 V
VGS Gate-Source Voltage -20 20 V
ID Drain Current-Continuous (TC = 25C) 80 A
ID Drain Current-Continuous (TC = 100C) 51 A
IDM Drain Current-Pulsed 320 A
PD Maximum Power Dissipation 24.5 W
TJ, TSTG Operating and Store Temperature Range -55 150 C
Thermal Characteristics
RJC Thermal Resistance, Junction to Case 5.1 C/W
RJA Thermal Resistance, Junction to Ambient 34 C/W
Electrical Characteristics (TJ = 25C unless otherwise noted)
Off Characteristics
BVDSS Drain-Source Breakdown Voltage VGS = 0V, ID = 250A 30 - - V
IDSS Zero Gate Voltage Drain Current VDS = 30V, VGS = 0V - - 1.0 A
IGSS Forward Gate Body Leakage Current VDS = 0V, VGS = 20V - - 100 nA
On Characteristics
VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250A 1.0 1.6 2.5 V
RDS(on) Static Drain-Source On-Resistance VGS = 10V, ID = 30A - 2.6 3.4 m
RDS(on) Static Drain-Source On-Resistance VGS = 4.5V, ID = 20A - 4.0 5.2 m
Dynamic Characteristics
Ciss Input Capacitance VDS = 15V, VGS = 0V, f = 1.0MHz - 3089 - pF
Coss Output Capacitance - 372 - pF
Crss Reverse Transfer Capacitance - 302 - pF
Switching Characteristics
td(on) Turn-On Delay Time VDD = 15V, VGS = 10V, ID = 30A, RGEN = 3 - 11 - ns
tr Turn-On Rise Time - 29 - ns
td(off) Turn-Off Delay Time - 47 - ns
tf Turn-Off Fall Time - 18 - ns
Qg Total Gate Charge VDS = 15V, VGS = 0 to 10V, ID = 30A - 58 - nC
Qgs Gate-Source Charge - 12 - -
Qgd Gate-Drain Charge - 13 - -
Drain-Source Diode Characteristics
IS Drain-Source Diode Forward Continuous Current VG = VD = 0V, Force Current - - 80 A
ISM Maximum Pulsed Current - - 320 A
VSD Drain-Source Diode Forward Voltage VGS = 0V, IS = 30A - - 1.2 V
Trr Body Diode Reverse Recovery Time IF = 30A, di/dt = 100A/s - 16 - ns
Qrr Body Diode Reverse Recovery Charge IF = 30A, di/dt = 100A/s - 7 - nC

2504151445_MIRACLE-POWER-MU3012Y_C47361164.pdf

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