N Channel Enhancement Mode Field Effect Transistor NIKO SEM PK608BA with lead free PDFN 5x6P package
Key Attributes
Model Number:
PK608BA
Product Custom Attributes
Drain To Source Voltage:
40V
Current - Continuous Drain(Id):
87A
Operating Temperature -:
-55℃~+150℃
RDS(on):
3.5mΩ@10V,20A
Gate Threshold Voltage (Vgs(th)):
1.3V
Reverse Transfer Capacitance (Crss@Vds):
329pF@20V
Number:
1 N-channel
Input Capacitance(Ciss):
3.884nF@20V
Pd - Power Dissipation:
50W
Gate Charge(Qg):
40nC@10V
Mfr. Part #:
PK608BA
Package:
DFN-8-EP(6.1x5.2)
Product Description
Product Overview
The E-25-5 is an N-Channel Enhancement Mode Field Effect Transistor from NIKO-SEM, designed for high-performance switching applications. Packaged in a PDFN 5x6P, this device offers excellent thermal performance and is Halogen-Free & Lead-Free.
Product Attributes
- Brand: NIKO-SEM
- Model: E-25-5 PK608BA
- Package: PDFN 5x6P
- Certifications: Halogen-Free & Lead-Free
Technical Specifications
| Parameter | Symbol | Test Conditions | Limit | Unit |
| ABSOLUTE MAXIMUM RATINGS | VDS | 40 | V | |
| VGS | ±20 | V | ||
| ID | TC = 25 °C | 87 | A | |
| ID | TC = 100 °C | 55 | A | |
| IDM | Pulsed Drain Current | 150 | A | |
| ID | TA = 25 °C | 20 | A | |
| ID | TA = 70 °C | 15.6 | A | |
| IAS | Avalanche Current L = 0.1mH | 49 | A | |
| EAS | Avalanche Energy L = 0.1mH | 120 | mJ | |
| Power Dissipation | PD | TC = 25 °C | 50 | W |
| PD | TC = 100 °C | 20 | W | |
| Power Dissipation | PD | TA = 25 °C | 2.4 | W |
| PD | TA = 70 °C | 1.5 | W | |
| Operating Junction & Storage Temperature Range | Tj, Tstg | -55 to 150 | °C | |
| THERMAL RESISTANCE RATINGS | RθJA | Junction-to-Ambient | 50.2 | °C / W |
| RθJC | Junction-to-Case | 2.5 | °C / W | |
| ELECTRICAL CHARACTERISTICS | V(BR)DSS | VGS = 0V, ID = 250µA | 40 | V |
| VGS(th) | VDS = VGS, ID = 250µA | 1.3 - 2.3 | V | |
| IGSS | VDS = 0V, VGS = ±20V | ±100 | nA | |
| IDSS | VDS = 40V, VGS = 0V | 1 | µA | |
| IDSS | VDS = 32V, VGS = 0V, TJ = 55 °C | 10 | µA | |
| RDS(ON) | VGS = 4.5V, ID = 15A | 3 - 4.6 | mΩ | |
| RDS(ON) | VGS = 10V, ID = 20A | 2.6 - 3.5 | mΩ | |
| gfs | VDS = 5V, ID = 20A | 136 | S | |
| DYNAMIC | Ciss | VGS = 0V, VDS = 20V, f = 1MHz | 3884 | pF |
| Coss | 441 | pF | ||
| Crss | 329 | pF | ||
| Rg | VGS = 0V, VDS = 0V, f = 1MHz | 1.1 | Ω | |
| Gate charge | Qg | VDS = 20V , VGS = 10V, ID = 20A | 77 | nC |
| Qgs | VGS = 4.5V | 11 | nC | |
| Qgd | 19 | nC | ||
| Switching Times | td(on) | VDS = 20V , ID & 20A, VGS = 10V, RGEN =6Ω | 25 | nS |
| tr | 18 | nS | ||
| Switching Times | td(off) | 65 | nS | |
| tf | 18 | nS | ||
| SOURCE-DRAIN DIODE | IS | Continuous Current | 38 | A |
| VSD | IF = 20A, VGS = 0V | 1.3 | V | |
| trr | IF = 20A, dlF/dt = 100A / µS | 25 | nS | |
| Qrr | 19 | nC |
2411220246_NIKO-SEM-PK608BA_C532978.pdf
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