Enhancement Mode N Channel Power MOSFET ORIENTAL SEMI SFG08R06DF with Low RDS ON and Fast Switching
Key Attributes
Model Number:
SFG08R06DF
Product Custom Attributes
Drain To Source Voltage:
80V
Current - Continuous Drain(Id):
100A
Operating Temperature -:
-55℃~+150℃
RDS(on):
6.5mΩ@10V
Gate Threshold Voltage (Vgs(th)):
2.5V@250uA
Reverse Transfer Capacitance (Crss@Vds):
50.9pF
Number:
-
Output Capacitance(Coss):
1.3042nF
Input Capacitance(Ciss):
3.8699nF
Pd - Power Dissipation:
148W
Gate Charge(Qg):
55.2nC@10V
Mfr. Part #:
SFG08R06DF
Package:
TO-252-2
Product Description
Product Overview
The SFG08R06DF is an Enhancement Mode N-Channel Power MOSFET from Oriental Semiconductor, built on their unique SFGMOS technology. It offers low RDS(ON), low gate charge, fast switching, and excellent avalanche characteristics. This series is specifically optimized for synchronous rectification systems requiring low driving voltage. Key applications include PD chargers, motor drivers, switching voltage regulators, DC-DC converters, and switched-mode power supplies.
Product Attributes
- Brand: Oriental Semiconductor
- Technology: SFGMOS
- Channel Type: N-Channel
- Mode: Enhancement Mode
- Package Type: TO252-J
- Certifications: Pb Free, RoHS, Halogen Free
Technical Specifications
| Parameter | Symbol | Value | Unit | Test Condition |
|---|---|---|---|---|
| Drain-source voltage (min @ Tj(max)) | VDS | 80 | V | Tj(max) |
| Pulsed drain current | ID, pulse | 300 | A | TC=25 C |
| Drain-source on-state resistance (max @ VGS=10V) | RDS(ON) | 6.5 | m | VGS=10V |
| Total gate charge | Qg | 55.2 | nC | VGS=10V, VDS=50V, ID=25A |
| Drain-source breakdown voltage | BVDSS | 80 | V | VGS=0V, ID=250A |
| Gate threshold voltage | VGS(th) | 1.0 - 2.5 | V | VDS=VGS, ID=250A |
| Continuous drain current (TC=25 C) | ID | 100 | A | TC=25 C |
| Continuous diode forward current (TC=25 C) | IS | 100 | A | TC=25 C |
| Power dissipation (TC=25 C) | PD | 148 | W | TC=25 C |
| Single pulsed avalanche energy | EAS | 80 | mJ | VDD=50V, VGS=10V, L=0.3mH, starting Tj=25 C |
| Operation and storage temperature | Tstg, Tj | -55 to 150 | C | |
| Thermal resistance, junction-case | RJC | 0.84 | C/W | |
| Thermal resistance, junction-ambient | RJA | 62 | C/W | Device mounted on 1 in FR-4 board, 2oz. Copper, still air, Ta=25 C |
| Gate-source voltage | VGS | 20 | V | |
| Input capacitance | Ciss | 3869.9 | pF | VGS=0V, VDS=40V, =100kHz |
| Output capacitance | Coss | 1304.2 | pF | VGS=0V, VDS=40V, =100kHz |
| Reverse transfer capacitance | Crss | 50.9 | pF | VGS=0V, VDS=40V, =100kHz |
| Turn-on delay time | td(on) | 22.0 | ns | VGS=10V, VDS=50V, RG=2, ID=25A |
| Rise time | tr | 21.5 | ns | VGS=10V, VDS=50V, RG=2, ID=25A |
| Turn-off delay time | td(off) | 62.7 | ns | VGS=10V, VDS=50V, RG=2, ID=25A |
| Fall time | tf | 61.4 | ns | VGS=10V, VDS=50V, RG=2, ID=25A |
| Total gate charge | Qg | 55.2 | nC | VGS=10V, VDS=50V, ID=25A |
| Gate-source charge | Qgs | 7.1 | nC | VGS=10V, VDS=50V, ID=25A |
| Gate-drain charge | Qgd | 14.6 | nC | VGS=10V, VDS=50V, ID=25A |
| Gate plateau voltage | Vplateau | 3.4 | V | VGS=10V, VDS=50V, ID=25A |
| Diode forward voltage | VSD | 1.3 | V | IS=12A, VGS=0V |
| Reverse recovery time | trr | 75.0 | ns | IS=25A, di/dt=100A/s |
| Reverse recovery charge | Qrr | 159.8 | nC | IS=25A, di/dt=100A/s |
| Peak reverse recovery current | Irrm | 3.4 | A | IS=25A, di/dt=100A/s |
| Package Marking | SFG8R06D | TO252 | ||
| Units/Reel | 2500 | TO252-J | ||
| Reels/Inner Box | 2 | TO252-J | ||
| Units/Inner Box | 5000 | TO252-J | ||
| Inner Boxes/Carton Box | 5 | TO252-J | ||
| Units/Carton Box | 25000 | TO252-J |
2411220122_ORIENTAL-SEMI-SFG08R06DF_C2762909.pdf
Related Products
NPN General Purpose Amplifier YANGJIE MMBT2222AT SOT523 Package RoHS Compliant Electronic Component
Product OverviewThe MMBT2222AT is an NPN General Purpose Amplifier in a SOT-523 surface mount package, ideally suited for automatic insertion. It offers a moisture sensitivity level of 1 and meets UL-94 V-0 flammability rating, being halogen-free. This component is designed for general-purpose ...
N channel Power MOSFET XTX BRT40N210P2 with 840A Pulsed Drain Current and Enhanced Trench Technology
Product OverviewThe BRT40N210P2 is an N-channel Enhancement Mode Power MOSFET from XTX Technology Inc. It features advanced trench technology, offering excellent RDS(ON) and low gate charge. This MOSFET is suitable for load switch, PWM applications, and power management scenarios.Product AttributesB...
Dual NPN Transistor XZT MMDT3904 in SOT-363 Package Designed for Amplification and Switching Tasks
Product OverviewThe MMDT3904 is a dual NPN transistor in a SOT-363 package. It is constructed using an epitaxial planar die and is ideal for low power amplification and switching applications.Product AttributesBrand: X T ELECTRONICSModel: MMDT3904Package: SOT-363Type: Dual Transistor (NPN+NPN...
Durable YANGJIE MG450HF12TLC2 IGBT module featuring trench technology for motion control welding and UPS
Product OverviewThe MG450HF12TLC2 is a high-performance IGBT module designed for motion/servo control, high-frequency switching applications, UPS, and welding machines. It features low Vce(sat) with Trench technology, low switching losses (particularly Eoff), a positive temperature coefficient for ...
Contact Our Experts And Get A Free Consultation!
Our mission is to offer "High Quality" & "Good Service" & "Fast Delivery" to help our clients to gain more profits.
