N Channel Enhanced Shielded Gate Trench MOSFET NH NSS085N100C with Low Reverse Transfer Capacitance
Key Attributes
Model Number:
NSS085N100C
Product Custom Attributes
Configuration:
-
Drain To Source Voltage:
100V
Current - Continuous Drain(Id):
70A
Operating Temperature -:
-55℃~+150℃
RDS(on):
8.5mΩ@10V
Gate Threshold Voltage (Vgs(th)):
1V
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
35pF
Number:
1 N-channel
Output Capacitance(Coss):
500pF
Pd - Power Dissipation:
89W
Input Capacitance(Ciss):
1.9nF
Gate Charge(Qg):
40nC
Mfr. Part #:
NSS085N100C
Package:
TO-220C
Product Description
Product Overview
The Niuhang NSS085N100C is an N-Channel Enhanced Shielded Gate Trench Power MOSFET designed for high-frequency circuits, motor drives, and automotive electronics. It features Niuhang's Advanced SGT Technology, offering low reverse transfer capacitances and low gate charge for reduced switching losses. This MOSFET is suitable for synchronous rectification applications and is 100% UIS and DVSD tested.
Product Attributes
- Brand: Niuhang Electronic Specification Technology Co., Ltd
- Model: NSS085N100C
- Channel Type: N-Channel
- Technology: Enhanced Shielded Gate Trench (SGT)
- Package: TO-220C
- Certifications: RoHS Compliant, Pb-Free
Technical Specifications
| Parameter | Test Conditions | Symbol | Min. | Typ. | Max. | Unit | |
|---|---|---|---|---|---|---|---|
| Product Summary | |||||||
| Drain-Source Voltage | @Tj | VDS | 100 | V | |||
| Continuous Drain Current | @Ta | ID | 70.0 | A | |||
| Drain-Source On Resistance | @10V | RDS(ON) | 8.5 | m | |||
| Absolute Maximum Ratings | |||||||
| Drain-Source Voltage | (Ta=25 Unless Otherwise Specified) | VDS | 100 | V | |||
| Gate-Source Voltage | VGS | 20 | V | ||||
| Continuous Drain Current | Ta= 25 | ID | 70.0 | A | |||
| Continuous Drain Current | Ta= 100 | ID | 44.8 | A | |||
| Drain Current-Pulse | TJ< 150 | IDM | 233 | A | |||
| Maximum Power Dissipation | Ta= 25 | PD | 89 | W | |||
| Maximum Power Dissipation | Ta= 100 | PD | 36 | W | |||
| Avalanche Current,Single Pulse | L= 0.5 mH | IAS | 16.0 | A | |||
| Single Pulse Avalanche Energy | L= 0.5 mH | EAS | 64 | mJ | |||
| Thermal Characteristics | |||||||
| Junction Temperature | (Ta=25 Unless Otherwise Specified) | TJ | -55 | 150 | |||
| Storage Temperature Range | TSTD | -55 | 150 | ||||
| Thermal Resistance Junction To Ambient | Still Air Environment | RJA | 60.0 | /W | |||
| Thermal Resistance Junction-Case | Device Mounted On 75mm x 45mm x 2.5mm Alu. Heat. | RJC | 1.40 | /W | |||
| Electrical Characteristics | |||||||
| Drain-Source Breakdown Voltage | VGS=0V,ID=250uA | BVDSS | 100 | V | |||
| Bvdss Temperature Coefficient | ID=250uA,Reference25 | BVDSS/TJ | 0.11 | V/ | |||
| Drain-Source Leakage Current | VDS= 100 V,VGS=0V | IDSS | 1 | uA | |||
| Gate-Body Leakage Current | VGS= 20 V,VDS=0V | IGSS | 100 | nA | |||
| Forward Transconductance | ID= 20.0 A,VDS= 5 V | gfs | 23.0 | S | |||
| Gate Threshold Voltage | VGS= VDS ID=250uA | VGS(TH) | 1.0 | 2.1 | 3.0 | V | |
| Drain-Source On Resistance | ID= 20.0 A,VGS= 10.0 V | RDS(ON) | 8.5 | 10.2 | m | ||
| Drain-Source On Resistance | ID= 20.0 A,VGS= 4.5 V | RDS(ON) | 9.8 | 13.7 | m | ||
| Input Capacitance | VDS= 50 V | Ciss | 1900.0 | pF | |||
| Output Capacitance | VGS= 0 V | Coss | 500.0 | pF | |||
| Reverse Transfer Capacitance | F= 1 MHZ | Crss | 35.0 | pF | |||
| Turn-On Delay Time | VDS= 50 V, VGS= 10.0 V, RG= 10.0 | td(on) | 9.0 | ns | |||
| Turn-On Rise Time | VDS= 50 V, VGS= 10.0 V, RG= 10.0 | tr | 17.0 | ns | |||
| Turn-Off Delay Time | VDS= 50 V, VGS= 10.0 V, RG= 10.0 | td(off) | 32.0 | ns | |||
| Turn-Off Rise Time | VDS= 50 V, VGS= 10.0 V, RG= 10.0 | tf | 74.0 | ns | |||
| Total Gate Charge | VDS= 50 V | Qg | 40.0 | nC | |||
| Gate-Source Charge | VGS= 10.0 V | Qgs | 9.0 | nC | |||
| Gate-Drain Charge | ID= 20.0 A, VGS= 10.0 V | Qgd | 10.0 | nC | |||
| Max. Diode Forward Current | IS | 70 | A | ||||
| Max. Pulsed Forward Current | ISM | 280 | A | ||||
| Diode Forward Voltage | ID= 20.0 A,VGS=0V | VSD | 0.80 | 1.2 | V | ||
| Reverse Recovery Time | ID= 20.0 A,di/dt= 100 A/us | trr | 37.0 | ns | |||
| Reverse Recovery Charge | VGS= 10.0 V,VDD= 50 V | Qrr | 34.0 | nC | |||
| Outline Dimensions (TO-220C) | |||||||
| Dim. | Unit | Min. | Typ. | Max. | Min. | Typ. | Max. |
| A | mm | 9.25 | - | 10.75 | 0.3642 | - | 0.4232 |
| B | mm | 1.10 | - | 1.65 | 0.0433 | - | 0.0650 |
| C | mm | 4.15 | - | 4.95 | 0.1634 | - | 0.1949 |
| D | mm | 0.25 | - | 0.65 | 0.0098 | - | 0.0256 |
| E | mm | 14.50 | - | 16.70 | 0.5709 | - | 0.6575 |
| F | mm | 8.40 | - | 9.95 | 0.3307 | - | 0.3917 |
| L | mm | 12.15 | - | 14.30 | 0.4783 | - | 0.5630 |
| H | mm | 3.00 | - | 3.80 | 0.1181 | - | 0.1496 |
| J | mm | 1.05 | - | 1.60 | 0.0413 | - | 0.0630 |
| K | mm | 0.65 | - | 0.95 | 0.0256 | - | 0.0374 |
| M | mm | 2.10 | - | 2.90 | 0.0827 | - | 0.1142 |
| O | mm | 3.20 | - | 4.10 | 0.1260 | - | 0.1614 |
| P | mm | 2.45 | - | 3.10 | 0.0965 | - | 0.1220 |
| Packing Information | |||||||
| Package Type | Package Code | Approx. Weight (g/Pcs) | Package Method | Quantity (Pcs/Min. Pack.) | Quantity (Pcs/Inner Box) | Quantity (Pcs/Carton) | |
| TO-220C | P1 | 2.057 | Tube | 50 | 1000 | 5000 | |
2507281725_NH-NSS085N100C_C7427703.pdf
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