Halogen Free Lead Free P Channel Logic Level Enhancement Mode Transistor NIKO SEM PV563BA SOP 8 Package
Key Attributes
Model Number:
PV563BA
Product Custom Attributes
Drain To Source Voltage:
40V
Current - Continuous Drain(Id):
9.5A
Operating Temperature -:
-55℃~+150℃
RDS(on):
15mΩ@10V,9.5A
Gate Threshold Voltage (Vgs(th)):
1.5V
Reverse Transfer Capacitance (Crss@Vds):
213pF@20V
Number:
1 P-Channel
Input Capacitance(Ciss):
1.883nF@20V
Pd - Power Dissipation:
3W
Gate Charge(Qg):
41.2nC@10V
Mfr. Part #:
PV563BA
Package:
SOP-8
Product Description
Product Overview
P-Channel Logic Level Enhancement Mode Field Effect Transistor designed for various applications. This device offers advantages such as Halogen-free & Lead-Free compliance, making it suitable for environmentally conscious designs.
Product Attributes
- Brand: NIKO-SEM
- Model: PV563BA
- Package: SOP-8
- Certifications: Halogen-free & Lead-Free
Technical Specifications
| Parameter | Symbol | Test Conditions | Limit | Unit |
| Drain-Source Breakdown Voltage | V(BR)DSS | VGS = 0V, ID = -250A | -40 | V |
| Gate Threshold Voltage | VGS(th) | VDS = VGS, ID = -250A | -1.3 / -1.5 / -3 | V |
| Zero Gate Voltage Drain Current | IDSS | VDS = -32V, VGS = 0V | -1 | A |
| Zero Gate Voltage Drain Current | IDSS | VDS = -30V, VGS = 0V, TJ = 55 C | -10 | A |
| Drain-Source On-State Resistance | RDS(ON) | VGS = -4.5V, ID = -9.5A | 17 / 29 | m |
| Drain-Source On-State Resistance | RDS(ON) | VGS = -10V, ID = -9.5A | 13 / 15 | m |
| Forward Transconductance | gfs | VDS = -5V, ID = -9.5A | 20 | S |
| Input Capacitance | Ciss | VGS = 0V, VDS = -20V, f = 1MHz | 1883 | pF |
| Output Capacitance | Coss | VGS = 0V, VDS = -20V, f = 1MHz | 255 | pF |
| Reverse Transfer Capacitance | Crss | VGS = 0V, VDS = -20V, f = 1MHz | 213 | pF |
| Total Gate Charge | Qg | VDS = -20V , VGS = -10V, ID = -9.5A | 41.2 | nC |
| Gate-Source Charge | Qgs | VDS = -20V , VGS = -10V, ID = -9.5A | 4.2 | nC |
| Gate-Drain Charge | Qg | VDS = -20V , VGS = -10V, ID = -9.5A | 14 | nC |
| Turn-On Delay Time | td(on) | VDD = -20V ID -9.5A, VGS = -10V, RGEN = 3 | 9.4 | nS |
| Rise Time | tr | VDD = -20V ID -9.5A, VGS = -10V, RGEN = 3 | 20 | nS |
| Turn-Off Delay Time | td(off) | VDD = -20V ID -9.5A, VGS = -10V, RGEN = 3 | 55 | nS |
| Fall Time | tf | VDD = -20V ID -9.5A, VGS = -10V, RGEN = 3 | 30 | nS |
| Continuous Current | IS | -2.3 | A | |
| Forward Voltage | VSD | IF = -9.5A, VGS = 0V | -1.3 | V |
| Reverse Recovery Time | trr | IF = -9.5A, dI/dt=100A/s | 20 | nS |
| Reverse Recovery Charge | Qrr | IF = -9.5A, dI/dt=100A/s | 6 | nC |
| Junction-to-Ambient Thermal Resistance | RJA | Steady-State | 75 | C / W |
| Junction-to-Case Thermal Resistance | RJC | Steady-State | 24 | C / W |
2410121619_NIKO-SEM-PV563BA_C5128261.pdf
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