power transistor NIKO-SEM PD636BA with 20 volt gate source voltage and 20 amp avalanche current in TO-252 package
Key Attributes
Model Number:
PD636BA
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
48A
Operating Temperature -:
-55℃~+150℃
RDS(on):
7mΩ@10V,20A
Gate Threshold Voltage (Vgs(th)):
1.3V
Reverse Transfer Capacitance (Crss@Vds):
91pF@15V
Number:
1 N-channel
Input Capacitance(Ciss):
765pF@15V
Pd - Power Dissipation:
37.9W
Gate Charge(Qg):
16.5nC@10V
Mfr. Part #:
PD636BA
Package:
TO-252-2
Product Description
Product Overview
This N-Channel Enhancement Mode Field Effect Transistor, model PD636BA, is designed for various applications requiring efficient power switching. It features a TO-252 package and is Halogen-Free & Lead-Free, aligning with environmental standards. The transistor offers robust performance with a maximum drain-source voltage of 30V and a continuous drain current of up to 48A.
Product Attributes
- Brand: NIKO-SEM
- Package: TO-252
- Certifications: Halogen-Free & Lead-Free
Technical Specifications
| Parameter | Symbol | Test Conditions | Limit | Unit |
| ABSOLUTE MAXIMUM RATINGS | ||||
| Drain-Source Voltage | VDS | 30 | V | |
| Gate-Source Voltage | VGS | 20 | V | |
| Continuous Drain Current | ID | TC = 25 C | 48 | A |
| Continuous Drain Current | ID | TC = 100 C | 30.5 | A |
| Pulsed Drain Current | IDM | 120 | A | |
| Avalanche Current | IAS | 20 | A | |
| Avalanche Energy | EAS | L = 0.1mH | 20.8 | mJ |
| Power Dissipation | PD | TC = 25 C | 37.9 | W |
| Power Dissipation | PD | TC = 100 C | 15 | W |
| Junction & Storage Temperature Range | TJ, Tstg | -55 to 150 | C | |
| THERMAL RESISTANCE RATINGS | ||||
| Junction-to-Case Thermal Resistance | RJC | 3.3 | C / W | |
| Junction-to-Ambient Thermal Resistance | RJA | 62.5 | C / W | |
| ELECTRICAL CHARACTERISTICS | ||||
| Drain-Source Breakdown Voltage | V(BR)DSS | VGS = 0V, ID = 250A | 30 | V |
| Gate Threshold Voltage | VGS(th) | VDS = VGS, ID = 250A | 1.3 - 1.8 - 2.3 | V |
| Gate-Body Leakage | IGSS | VDS = 0V, VGS = 20V | 100 | nA |
| Zero Gate Voltage Drain Current | IDSS | VDS = 24V, VGS = 0V | 1 | A |
| Zero Gate Voltage Drain Current | IDSS | VDS = 20V, VGS = 0V, TJ = 125 C | 10 | A |
| Drain-Source On-State Resistance | RDS(ON) | VGS = 4.5V, ID = 15A | 10 - 12 | m |
| Drain-Source On-State Resistance | RDS(ON) | VGS = 10V , ID = 20A | 7 - 9 | m |
| Forward Transconductance | gfs | VDS = 5V, ID = 20A | 45 | S |
| Input Capacitance | Ciss | VGS = 0V, VDS = 15V, f = 1MHz | 765 | pF |
| Output Capacitance | Coss | VGS = 0V, VDS = 15V, f = 1MHz | 143 | pF |
| Reverse Transfer Capacitance | Crss | VGS = 0V, VDS = 15V, f = 1MHz | 91 | pF |
| Gate Resistance | Rg | VGS = 0V, VDS = 0V, f = 1MHz | 3 | |
| Total Gate Charge | Qg | VGS=10V VDS = 15V , ID = 20A | 16.5 | nC |
| Gate-Source Charge | Qgs | VGS=4.5V VDS = 15V , ID = 20A | 8.9 | nC |
| Gate-Drain Charge | Qgd | VGS=4.5V VDS = 15V , ID = 20A | 2.2 | nC |
| Turn-On Delay Time | td(on) | VDS = 15V ID 20A, VGS = 10V, RGEN =6 | 26 | nS |
| Rise Time | tr | VDS = 15V ID 20A, VGS = 10V, RGEN =6 | 22 | nS |
| Turn-Off Delay Time | td(off) | VDS = 15V ID 20A, VGS = 10V, RGEN =6 | 42 | nS |
| Fall Time | tf | VDS = 15V ID 20A, VGS = 10V, RGEN =6 | 25 | nS |
| SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS | ||||
| Continuous Current | IS | 48 | A | |
| Forward Voltage | VSD | IF = 20A, VGS = 0V | 1.2 | V |
| Reverse Recovery Time | trr | IF = 20A, dlF/dt = 100A / S | 21 | nS |
| Reverse Recovery Charge | Qrr | IF = 20A, dlF/dt = 100A / S | 9 | nC |
2411220106_NIKO-SEM-PD636BA_C532970.pdf
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