Low RDS ON N Channel Power MOSFET NH NSH110N15C Suitable for Motor Drives and High Frequency Circuits

Key Attributes
Model Number: NSH110N15C
Product Custom Attributes
Drain To Source Voltage:
150V
Current - Continuous Drain(Id):
81A
RDS(on):
11mΩ@10V,20A
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
4V@250uA
Reverse Transfer Capacitance (Crss@Vds):
5.5pF@75V
Number:
1 N-channel
Input Capacitance(Ciss):
1.882nF@75V
Pd - Power Dissipation:
179W
Gate Charge(Qg):
26nC
Mfr. Part #:
NSH110N15C
Package:
TO-220C
Product Description

Product Overview

The NSH110N15C is an N-Channel Enhanced Shielded Gate Trench Power MOSFET from Guangdong Niuhang Specification Electronic Technology Co., Ltd. It features low RDS(ON) for high efficiency and low gate charge for high-speed switching. With high EAS for reliability, this MOSFET is 100% UIS and RG tested. It is suitable for DC/DC converters, synchronous rectification, high-frequency circuits, battery management systems (BMS), motor drives, printed circuit board control, automotive electronics, and uninterruptible power supplies (UPS).

Product Attributes

  • Brand: Niuhang (NH)
  • Model ID: NSH110N15C
  • Channel Type: N-Channel
  • Technology: Enhanced Shielded Gate Trench Power MOSFET
  • Certifications: RoHS COMPLIANT, Pb-Frce

Technical Specifications

Parameter Test Conditions Symbol Min. Typ. Max. Unit
PRODUCT SUMMARY
Drain-Source Voltage VDS 150 V
Continuous Drain Current Ta= 25 ID 81 A
RDS(ON) Type @10V RDS(ON) 11.00 m
Absolute Maximum Ratings (Ta=25 Unless Otherwise Specified)
Drain-Source Voltage VDS 150 V
Gate-Source Voltage VGS 20 V
Continuous Drain Current (Note 1) Ta= 25 ID 81 A
Continuous Drain Current (Note 1) Ta= 100 ID 52 A
Drain Current-Pulsed (Note 1) TJ< 150 IDM 324 A
Maximum Power Dissipation Ta= 25 PD 179 W
Power Dissipation Derating Factor Above 25 DF 1.43 W/
Power Dissipation Derating Factor Ta= 100 PD 71 W
Junction Temperature TJ -55 150
Storage Temperature Range TSTD -55 150
Avalanche Current, Single Pulse (Note 1) L= 0.5 mH IAS 22 A
Single Pulse Avalanche Energy (Note 1) L= 0.5 mH,VDD= 75 V EAS 125 mJ
Single Pulse Avalanche Energy (Note 1) IAS= 22.4 A,RG= 25 Starting Tj=25 ,VG = 10 V EAS 125 mJ
Thermal Characteristcs (Ta=25 Unless Otherwise Specified)
Thermal Resistance Junction To Ambient Still Air Environment With Ta =25C RJA 60.0 /W
Thermal Resistance Junction-Case Device Mounted On 1 in 2 FR-4 Board With 2oz RJC 0.7 /W
Electrical Characteristcs (Ta=25 Unless Otherwise Specified)
Drain-Source Breakdown Voltage VGS=0V,ID=250uA BV DSS 150 -- -- V
Bvdss Temperature Coefficient ID=250uA,Reference25 BV DSS/T J -- 0.172 -- V/
Drain-Source Leakage Current VDS= 150 V,VGS=0V I DSS -- -- 1 uA
Gate-Body Leakage Current VGS= 20 V,VDS=0V I GSS -- -- 100 nA
Forward Transconductance ID= 20 A,VDS= 5 V gfs -- 33 -- S
Gate Threshold Voltage VGS= VDS ID=250uA V GS(TH) 2.0 3.0 4.0 V
Drain-Source On Resistance ID= 20 A,VGS= 10 V R DS(ON) -- 11.00 13.00 m
Drain-Source On Resistance ID= 20 A,VGS= 4.5 V R DS(ON) -- 12.65 17.42 m
Gate Resistance VGS=0V,VDS=0V, Freq.=1MHz R g -- 4.40 --
Input Capacitance VDS= 75 V C iss -- 1882.0 -- pF
Output Capacitance VGS= 0 V C oss -- 235.0 -- pF
Reverse Transfer Capacitance F= 1 MHZ C rss -- 5.5 -- pF
Turn-On Delay Time VDS= 75 V t d(on) -- 10.0 -- ns
Turn-On Rise Time VGS= 10 V t r -- 6.0 -- ns
Turn-Off Delay Time RL= 1.2 t d(off) -- 19.0 -- ns
Turn-Off Rise Time RG= 25 t f -- 7.3 -- ns
Total Gate Charge VDS= 75 V Q g -- 26.0 -- nC
Gate-Source Charge VGS= 10 V Q gs -- 11.0 -- nC
Gate-Drain Charge ID= 20 A Q gd -- 3.7 -- nC
Max. Diode Forward Current I S -- -- 81 A
Max. Pulsed Forward Current I SM -- -- 284 A
Diode Forward Voltage ID= 20 A,VGS=0V V SD -- 0.90 1.26 V
Reverse Recovery Time ID= 20 A,di/dt= 100 A/us t rr -- 72.0 -- ns
Reverse Recovery Charge VGS= 10 V,VDS= 75 V Q rr -- 120.0 -- nC
Weight App. 2.057 Grams (0.07255 Ounce)
OUTLINE DRAWINGS
Package TO-220C
Dimension A A 9.50 -- 10.50 mm
Dimension A A 0.37 -- 0.41 inches
Dimension B B 1.10 -- 1.65 mm
Dimension B B 0.04 -- 0.06 inches
Dimension C C 4.15 -- 4.95 mm
Dimension C C 0.16 -- 0.19 inches
Dimension D D 0.25 -- 0.65 mm
Dimension D D 0.01 -- 0.03 inches
Dimension E E 14.50 -- 16.70 mm
Dimension E E 0.57 -- 0.66 inches
Dimension F F 8.40 -- 9.95 mm
Dimension F F 0.33 -- 0.39 inches
Dimension G G 12.15 -- 14.30 mm
Dimension G G 0.48 -- 0.56 inches
Dimension H H 3.00 -- 3.80 mm
Dimension H H 0.12 -- 0.15 inches
Dimension J J 1.05 -- 1.60 mm
Dimension J J 0.04 -- 0.06 inches
Dimension K K 0.65 -- 0.95 mm
Dimension K K 0.03 -- 0.04 inches
Dimension M M 2.10 -- 2.90 mm
Dimension M M 0.08 -- 0.11 inches
Dimension O O 3.20 -- 4.10 mm
Dimension O O 0.13 -- 0.16 inches
Dimension P P 2.45 -- 3.10 mm
Dimension P P 0.10 -- 0.12 inches
PACKING INFORMATION
Package Code Package Method Inner Box Size LWH(mm) Quantity (Pcs/Inner Box) Outer Carton Size LWH(mm) Quantity (Pcs/Carton)
TO-220C Tube Packaging 560x155x55 1000 570284185 5000

2504101957_NH-NSH110N15C_C46352559.pdf

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