Low RDS ON N Channel Power MOSFET NH NSH110N15C Suitable for Motor Drives and High Frequency Circuits
Product Overview
The NSH110N15C is an N-Channel Enhanced Shielded Gate Trench Power MOSFET from Guangdong Niuhang Specification Electronic Technology Co., Ltd. It features low RDS(ON) for high efficiency and low gate charge for high-speed switching. With high EAS for reliability, this MOSFET is 100% UIS and RG tested. It is suitable for DC/DC converters, synchronous rectification, high-frequency circuits, battery management systems (BMS), motor drives, printed circuit board control, automotive electronics, and uninterruptible power supplies (UPS).
Product Attributes
- Brand: Niuhang (NH)
- Model ID: NSH110N15C
- Channel Type: N-Channel
- Technology: Enhanced Shielded Gate Trench Power MOSFET
- Certifications: RoHS COMPLIANT, Pb-Frce
Technical Specifications
| Parameter | Test Conditions | Symbol | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|---|
| PRODUCT SUMMARY | ||||||
| Drain-Source Voltage | VDS | 150 | V | |||
| Continuous Drain Current | Ta= 25 | ID | 81 | A | ||
| RDS(ON) Type | @10V | RDS(ON) | 11.00 | m | ||
| Absolute Maximum Ratings (Ta=25 Unless Otherwise Specified) | ||||||
| Drain-Source Voltage | VDS | 150 | V | |||
| Gate-Source Voltage | VGS | 20 | V | |||
| Continuous Drain Current (Note 1) | Ta= 25 | ID | 81 | A | ||
| Continuous Drain Current (Note 1) | Ta= 100 | ID | 52 | A | ||
| Drain Current-Pulsed (Note 1) | TJ< 150 | IDM | 324 | A | ||
| Maximum Power Dissipation | Ta= 25 | PD | 179 | W | ||
| Power Dissipation Derating Factor | Above 25 | DF | 1.43 | W/ | ||
| Power Dissipation Derating Factor | Ta= 100 | PD | 71 | W | ||
| Junction Temperature | TJ | -55 | 150 | |||
| Storage Temperature Range | TSTD | -55 | 150 | |||
| Avalanche Current, Single Pulse (Note 1) | L= 0.5 mH | IAS | 22 | A | ||
| Single Pulse Avalanche Energy (Note 1) | L= 0.5 mH,VDD= 75 V | EAS | 125 | mJ | ||
| Single Pulse Avalanche Energy (Note 1) | IAS= 22.4 A,RG= 25 Starting Tj=25 ,VG = 10 V | EAS | 125 | mJ | ||
| Thermal Characteristcs (Ta=25 Unless Otherwise Specified) | ||||||
| Thermal Resistance Junction To Ambient | Still Air Environment With Ta =25C | RJA | 60.0 | /W | ||
| Thermal Resistance Junction-Case | Device Mounted On 1 in 2 FR-4 Board With 2oz | RJC | 0.7 | /W | ||
| Electrical Characteristcs (Ta=25 Unless Otherwise Specified) | ||||||
| Drain-Source Breakdown Voltage | VGS=0V,ID=250uA | BV DSS | 150 | -- | -- | V |
| Bvdss Temperature Coefficient | ID=250uA,Reference25 | BV DSS/T J | -- | 0.172 | -- | V/ |
| Drain-Source Leakage Current | VDS= 150 V,VGS=0V | I DSS | -- | -- | 1 | uA |
| Gate-Body Leakage Current | VGS= 20 V,VDS=0V | I GSS | -- | -- | 100 | nA |
| Forward Transconductance | ID= 20 A,VDS= 5 V | gfs | -- | 33 | -- | S |
| Gate Threshold Voltage | VGS= VDS ID=250uA | V GS(TH) | 2.0 | 3.0 | 4.0 | V |
| Drain-Source On Resistance | ID= 20 A,VGS= 10 V | R DS(ON) | -- | 11.00 | 13.00 | m |
| Drain-Source On Resistance | ID= 20 A,VGS= 4.5 V | R DS(ON) | -- | 12.65 | 17.42 | m |
| Gate Resistance | VGS=0V,VDS=0V, Freq.=1MHz | R g | -- | 4.40 | -- | |
| Input Capacitance | VDS= 75 V | C iss | -- | 1882.0 | -- | pF |
| Output Capacitance | VGS= 0 V | C oss | -- | 235.0 | -- | pF |
| Reverse Transfer Capacitance | F= 1 MHZ | C rss | -- | 5.5 | -- | pF |
| Turn-On Delay Time | VDS= 75 V | t d(on) | -- | 10.0 | -- | ns |
| Turn-On Rise Time | VGS= 10 V | t r | -- | 6.0 | -- | ns |
| Turn-Off Delay Time | RL= 1.2 | t d(off) | -- | 19.0 | -- | ns |
| Turn-Off Rise Time | RG= 25 | t f | -- | 7.3 | -- | ns |
| Total Gate Charge | VDS= 75 V | Q g | -- | 26.0 | -- | nC |
| Gate-Source Charge | VGS= 10 V | Q gs | -- | 11.0 | -- | nC |
| Gate-Drain Charge | ID= 20 A | Q gd | -- | 3.7 | -- | nC |
| Max. Diode Forward Current | I S | -- | -- | 81 | A | |
| Max. Pulsed Forward Current | I SM | -- | -- | 284 | A | |
| Diode Forward Voltage | ID= 20 A,VGS=0V | V SD | -- | 0.90 | 1.26 | V |
| Reverse Recovery Time | ID= 20 A,di/dt= 100 A/us | t rr | -- | 72.0 | -- | ns |
| Reverse Recovery Charge | VGS= 10 V,VDS= 75 V | Q rr | -- | 120.0 | -- | nC |
| Weight | App. 2.057 | Grams | (0.07255 | Ounce) | ||
| OUTLINE DRAWINGS | ||||||
| Package | TO-220C | |||||
| Dimension A | A | 9.50 | -- | 10.50 | mm | |
| Dimension A | A | 0.37 | -- | 0.41 | inches | |
| Dimension B | B | 1.10 | -- | 1.65 | mm | |
| Dimension B | B | 0.04 | -- | 0.06 | inches | |
| Dimension C | C | 4.15 | -- | 4.95 | mm | |
| Dimension C | C | 0.16 | -- | 0.19 | inches | |
| Dimension D | D | 0.25 | -- | 0.65 | mm | |
| Dimension D | D | 0.01 | -- | 0.03 | inches | |
| Dimension E | E | 14.50 | -- | 16.70 | mm | |
| Dimension E | E | 0.57 | -- | 0.66 | inches | |
| Dimension F | F | 8.40 | -- | 9.95 | mm | |
| Dimension F | F | 0.33 | -- | 0.39 | inches | |
| Dimension G | G | 12.15 | -- | 14.30 | mm | |
| Dimension G | G | 0.48 | -- | 0.56 | inches | |
| Dimension H | H | 3.00 | -- | 3.80 | mm | |
| Dimension H | H | 0.12 | -- | 0.15 | inches | |
| Dimension J | J | 1.05 | -- | 1.60 | mm | |
| Dimension J | J | 0.04 | -- | 0.06 | inches | |
| Dimension K | K | 0.65 | -- | 0.95 | mm | |
| Dimension K | K | 0.03 | -- | 0.04 | inches | |
| Dimension M | M | 2.10 | -- | 2.90 | mm | |
| Dimension M | M | 0.08 | -- | 0.11 | inches | |
| Dimension O | O | 3.20 | -- | 4.10 | mm | |
| Dimension O | O | 0.13 | -- | 0.16 | inches | |
| Dimension P | P | 2.45 | -- | 3.10 | mm | |
| Dimension P | P | 0.10 | -- | 0.12 | inches | |
| PACKING INFORMATION | ||||||
| Package Code | Package Method | Inner Box Size LWH(mm) | Quantity (Pcs/Inner Box) | Outer Carton Size LWH(mm) | Quantity (Pcs/Carton) | |
| TO-220C | Tube Packaging | 560x155x55 | 1000 | 570284185 | 5000 | |
2504101957_NH-NSH110N15C_C46352559.pdf
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