rugged OSEN IRF730 450V N channel MOSFET for switch mode power supplies and electronic lamp ballasts
Key Attributes
Model Number:
IRF730
Product Custom Attributes
Drain To Source Voltage:
450V
Current - Continuous Drain(Id):
6A
RDS(on):
956mΩ@10V
Gate Threshold Voltage (Vgs(th)):
4V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
64pF
Input Capacitance(Ciss):
700pF
Output Capacitance(Coss):
170pF
Pd - Power Dissipation:
55W
Gate Charge(Qg):
38nC
Mfr. Part #:
IRF730
Package:
TO-220AB
Product Description
Product Overview
The IRF730 is a 450V N-CHANNEL MOSFET designed for high efficiency and ruggedness. It features fast switching speeds, high input impedance, low-level drive capability, and tested avalanche energy. This MOSFET is ideal for applications such as high efficiency switch mode power supplies, power factor correction, and electronic lamp ballasts.
Product Attributes
- Brand: OSEN
- Publication Order Number: IRF730
- Revision: Rev 21.2.10
- Package Type: TO-220AB
Technical Specifications
| Parameters | Unit | Conditions | Min | Typ | Max |
| Absolute Maximum Ratings | |||||
| Drain-Source Voltage (VDSS) | V | 450 | |||
| Gate-Source Voltage-Continuous (VGS) | V | 30 | |||
| Drain Current-Continuous (ID) (Note 2) | A | 6 | |||
| Drain Current-Single Pulsed (IDM) (Note 1) | A | 25 | |||
| Power Dissipation (PD) (Note 2) | W | 55 | |||
| Max.Operating junction temperature (Tj) | 150 | ||||
| Electrical Characteristics | |||||
| Drain-Source Breakdown Voltage (BVDSS) (Note 1) | V | ID=250A VGS=0VTJ=25C | 450 | -- | -- |
| Gate Threshold Voltage (VGS(th)) | V | VDS=VGSID=250A | 2.0 | -- | 4.0 |
| Drain-Source On-Resistance (RDS(on)) | VGS=10VID=3.3A | -- | 0.956 | -- | |
| Gate-Body Leakage Current (IGSS) | nA | VGS=20VVDS=0 | -- | -- | 100 |
| Zero Gate Voltage Drain Current (IDSS) | A | VDS=400VVGS=0 | -- | -- | 25 |
| Forward Transconductance (gfs) | S | VDS=50VID=3.3A | 2.9 | -- | -- |
| Switching Characteristics | |||||
| Turn-On Delay Time (Td(on)) | ns | VDS=200V ID=3.5A RG=12Note 2 | -- | 10 | -- |
| Rise Time (Tr) | ns | -- | 15 | -- | |
| Turn-Off Delay Time (Td(off)) | ns | -- | 38 | -- | |
| Fall Time (Tf) | ns | -- | 14 | -- | |
| Total Gate Charge (Qg) | nC | VDS=320V VGS=10V ID=3.5ANote 2 | -- | -- | 38 |
| Gate-Source Charge (Qgs) | nC | -- | -- | 5.7 | |
| Gate-Drain Charge (Qgd) | nC | -- | -- | -22 | |
| Dynamic Characteristics | |||||
| Input Capacitance (Ciss) | pF | VDS=25VVGS=0 f=1MHz | -- | 700 | -- |
| Output Capacitance (Coss) | pF | -- | 170 | -- | |
| Reverse Transfer Capacitance (Crss) | pF | -- | 64 | -- | |
| Continuous Drain-Source Diode Forward Current (IS) (Note 2) | A | -- | -- | 6 | |
| Diode Forward On-Voltage (VSD) | V | IS=6AVGS=0 | -- | -- | 1.6 |
| Thermal Resistance, Junction to Case (Rth(j-c)) | /W | -- | -- | 2.27 | |
Notes:
Note 1: Repetitive Rating : Pulse width limited by maximum junction temperature
Note 2: Pulse test: PW <= 300us , duty cycle <= 2%
2410121731_OSEN-IRF730_C20607745.pdf
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