750V Silicon Carbide Power MOSFET SG2M025075LJ with Low Switching Losses and High Blocking Voltage
Key Attributes
Model Number:
SG2M025075LJ
Product Custom Attributes
Drain To Source Voltage:
750V
Current - Continuous Drain(Id):
92A
Operating Temperature -:
-55℃~+175℃
Gate Threshold Voltage (Vgs(th)):
2.8V
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
8.5pF
Input Capacitance(Ciss):
2.562nF
Pd - Power Dissipation:
341W
Gate Charge(Qg):
80nC
Mfr. Part #:
SG2M025075LJ
Package:
TO-247-4L
Product Description
Product Overview
The SG2M025075LJ is a 750V Silicon Carbide (SiC) Power MOSFET from Qingchun Semiconductor (Ningbo) Co., Ltd. It features high-speed switching with very low switching losses, fully controllable dv/dt, and high blocking voltage with low on-resistance. The device also boasts a fast intrinsic diode with low reverse recovery (Qrr) and temperature-independent turn-off switching losses. These characteristics contribute to reduced cooling efforts, improved efficiency, increased power density, and the ability to operate at higher system switching frequencies. It is suitable for applications such as on-board chargers/PFC, EV battery chargers, booster/DC-DC converters, and switch mode power supplies.
Product Attributes
- Brand: Qingchun Semiconductor (TriQSiCTM)
- Origin: Ningbo, China
- Model: SG2M025075LJ
- Material: Silicon Carbide (SiC)
- Channel Type: N Channel Enhancement
- Package: TO-247-4L
- Certifications: Halogen free, RoHS compliant
- Datasheet Version: V01_00
- Datasheet Date: 2024.12.11
Technical Specifications
| Type | VDS (V) | IDS (A) (TC = 25) | RDS(on), typ (m) (VGS = 18V, ID = 34A, TJ = 25) | TJ,max () | Marking | Package |
|---|---|---|---|---|---|---|
| SG2M025075LJ | 750 | 92 | 25 | 175 | SG2M025075LJ | TO-247-4L |
| Symbol | Parameter | Value | Unit | Test Conditions | Note |
|---|---|---|---|---|---|
| VDS,max | Drain source voltage | 750 | V | VGS = 0V, ID = 100A | |
| VGS,max | Gate source voltage | -8 /+22 | V | Absolute maximum values | Note1 |
| VGSop | Gate source voltage | -4 /+18 | V | Recommended operational values | |
| ID | Continuous drain current | 92 | A | VGS = 18V, TC = 25C | Fig.19 |
| ID | Continuous drain current | 65 | A | VGS = 18V, TC = 100C | |
| ID(pulse) | Pulsed drain current | 184 | A | Pulse width tP limited by TJ,max | Fig.22 |
| PD | Power dissipation | 341 | W | TC= 25C,TJ = 175C | Fig.20 |
| TJ ,Tstg | Operating Junction and storage temperature | -55 to +175 | C | ||
| TL | Soldering temperature | 260 | C | 1.6mm (0.063) from case for 10s | |
| TM | Mounting torque | 1.8.8 | Nm lbf-in | M3 or 6-32 screw | |
| Rth(j-c) | Thermal resistance from junction to case | 0.35 - 0.44 | C/W | Fig.21 | |
| V(BR)DSS | Drain-source breakdown voltage | 750 | V | VGS = 0V, ID = 100A | |
| VGS(th) | Gate threshold voltage | 2.3 - 3.6 | V | VDS = VGS, ID = 14mA | Fig.11 |
| VGS(th) | Gate threshold voltage | 2.2 | V | VDS = VGS, ID = 14mA, TJ = 175C | |
| IDSS | Zero gate voltage drain current | 1 - 10 | A | VDS = 750V, VGS = 0V | |
| IGSS | Gate source leakage current | - 100 | nA | VGS = 18V, VDS = 0V | |
| RDS(on) | Current drain-source on-state resistance | 25 - 33 | m | VGS = 18V, ID = 34A | Fig.4,5, 6 |
| RDS(on) | Current drain-source on-state resistance | 40 | m | VGS = 18V, ID = 34A, TJ = 175C | |
| gfs | Transconductance | 25 | S | VDS = 20V, ID = 34A | Fig.7 |
| gfs | Transconductance | 23 | S | VDS = 20V, ID = 34A, TJ = 175C | |
| Rg,int | Internal gate resistance | 1.8 | VAC = 25mV, f = 1MHz, open drain | ||
| Ciss | Input capacitance | 2562 | pF | VDS = 500V, VGS = 0V, TJ = 25C, VAC = 25mV, f = 100kHz | Fig.17, 18 |
| Coss | Output capacitance | 192 | pF | ||
| Crss | Reverse capacitance | 8.5 | pF | ||
| Eoss | Coss stored energy | 29 | J | Fig.16 | |
| Qgs | Gate source charge | 24 | nC | VDS = 500V, VGS = -4/+18V, ID = 34A | Fig.12 |
| Qgd | Gate drain charge | 22 | nC | ||
| Qg | Gate charge | 80 | nC | ||
| Eon | Turn on switching energy | 146 | J | VDS = 500V, VGS = -4/+18V, ID = 34A, Rg = 2.5, L = 16.7H | Fig.26 |
| Eoff | Turn off switching energy | 49 | J | ||
| tdon | Turn on delay time | 14.6 | ns | Fig.27 | |
| tr | Rise time | 15.8 | ns | ||
| tdoff | Turn off delay time | 32 | ns | ||
| tf | Fall time | 9.5 | ns | ||
| VSD | Diode forward voltage | 3.6 | V | VGS = -4V, ISD = 17A | Fig.8,9, 10 |
| VSD | Diode forward voltage | 3.2 | V | VGS = -4V, ISD = 17A, TJ = 175C | |
| IS | Continuous diode forward current | 80 | A | VGS = -4V, Tc = 25C | Note2 |
| trr | Reverse recovery time | 28 | ns | VR = 500V, VGS = -4V, ISD = 34A, di/dt = 1979A/s, TJ = 175C | |
| Qrr | Reverse recovery charge | 348 | nC | ||
| Irrm | Peak reverse recovery current | 21 | A |
2504101957_Sichainsemi-SG2M025075LJ_C42456086.pdf
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