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quality 20V P Channel MOSFET Siliup SP2006KNC Designed for Ultra Small Portable Electronics Applications factory
quality 20V P Channel MOSFET Siliup SP2006KNC Designed for Ultra Small Portable Electronics Applications factory

20V P Channel MOSFET Siliup SP2006KNC Designed for Ultra Small Portable Electronics Applications

Key Attributes
Model Number: SP2006KNC
Product Custom Attributes
Drain To Source Voltage:
20V
Current - Continuous Drain(Id):
660mA
RDS(on):
1.7Ω@1.8V
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
1V@250uA
Type:
P-Channel
Reverse Transfer Capacitance (Crss@Vds):
9pF@16V
Number:
1 P-Channel
Input Capacitance(Ciss):
113pF@16V
Pd - Power Dissipation:
150mW
Mfr. Part #:
SP2006KNC
Package:
PDFN1006-3L
Product Description

Product Overview

The SP2006KNC is a 20V P-Channel MOSFET designed for surface mount applications. It features low RDS(on) and operates at low logic-level gate drive, making it suitable for load/power switching, interfacing, logic switching, and battery management in ultra-small portable electronics. This device is ESD protected.

Product Attributes

  • Brand: Shanghai Siliup Semiconductor Technology Co. Ltd.
  • Package Type: DFN1006-3L
  • Device Code: 06K

Technical Specifications

Parameter Symbol Condition Min. Typ. Max. Unit
Product Summary
Drain-Source Voltage V(BR)DSS -20 V
Drain-Source On-Resistance RDS(on) -4.5V 0.65 0.75
Drain-Source On-Resistance RDS(on) -2.5V 0.85 1.0
Continuous Drain Current ID -0.66 A
Absolute Maximum Ratings (Ta=25 unless otherwise noted)
Drain-Source Voltage VDS -20 V
Gate-Source Voltage VGS 12 V
Continuous Drain Current ID -0.66 A
Pulsed Drain Current IDM -1.2 A
Power Dissipation PD 0.15 W
Thermal Resistance Junction to Ambient RJA 833 /W
Junction Temperature TJ 150
Storage Temperature TSTG -55 +150
Electrical Characteristics (TA=25 oC, unless otherwise noted)
Drain-source breakdown voltage V(BR)DSS VGS = 0V, ID =-250A -20 V
Zero gate voltage drain current IDSS VDS =-16V,VGS = 0V -1 A
Gate-body leakage current IGSS VGS = 10VVDS =0V 10 A
Gate threshold voltage VGS(th) VDS =VGS, ID =-250A -0.35 -0.65 -1 V
Drain-source on-resistance RDS(on) VGS = -4.5V, ID = -0.5A 0.65 0.75
Drain-source on-resistance RDS(on) VGS = -2.5V, ID = -0.2A 0.85 1.0
Drain-source on-resistance RDS(on) VGS = -1.8V, ID = -0.1A 1.7
Input Capacitance Ciss VDS =-16V,VGS =0V,f =1MHz 113 pF
Output Capacitance Coss VDS =-16V,VGS =0V,f =1MHz 15 pF
Reverse Transfer Capacitance Crss VDS =-16V,VGS =0V,f =1MHz 9 pF
Turn-on delay time td(on) VDS=-10V,ID=-200mA, VGS=-4.5V,RG=10 9 ns
Turn-on rise time tr VDS=-10V,ID=-200mA, VGS=-4.5V,RG=10 5.7 ns
Turn-off delay time td(off) VDS=-10V,ID=-200mA, VGS=-4.5V,RG=10 32.6 ns
Turn-off fall time tf VDS=-10V,ID=-200mA, VGS=-4.5V,RG=10 20.3 ns
Diode Forward voltage VSD VGS =0V, IS=-0.5 A -1.2 V
Package Dimensions (DFN1006-3L) (Unit: mm)
Dimension Symbol Min. Max.
A 0.46 0.51
A1 0 0.05
b 0.45 0.55
b1 0.1 0.2
c 0.08 0.18
D 0.95 1.05
D1 0.65
E 0.55 0.65
E1 0.325
L 0.2 0.3
L1 0.2 0.3
R 0.05 0.15

2411212332_Siliup-SP2006KNC_C41355138.pdf

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