Low RDSon 150V N Channel MOSFET Siliup SP015N10HTF Suitable for High Frequency and Hard Switched Circuits
Key Attributes
Model Number:
SP015N10HTF
Product Custom Attributes
Drain To Source Voltage:
150V
Configuration:
-
Current - Continuous Drain(Id):
130A
Operating Temperature -:
-55℃~+150℃
RDS(on):
10mΩ@10V
Gate Threshold Voltage (Vgs(th)):
4V@250uA
Reverse Transfer Capacitance (Crss@Vds):
296pF
Number:
-
Output Capacitance(Coss):
375pF
Pd - Power Dissipation:
370W
Input Capacitance(Ciss):
11.685nF
Gate Charge(Qg):
275nC@10V
Mfr. Part #:
SP015N10HTF
Package:
TO-247
Product Description
Product Overview
The SP015N10HTF is a 150V N-Channel MOSFET from Siliup Semiconductor Technology Co. Ltd. It features fast switching, low gate charge, and low RDS(on). The device is 100% tested for single pulse avalanche energy. It is suitable for PWM applications, hard switched and high frequency circuits, and power management.
Product Attributes
- Brand: Siliup Semiconductor Technology Co. Ltd.
- Device Code: 015N10H
- Package: TO-247
Technical Specifications
| Parameter | Symbol | Conditions | Min. | Typ. | Max. | Units |
|---|---|---|---|---|---|---|
| Product Summary | ||||||
| Drain-Source Voltage | V(BR)DSS | 150 | V | |||
| RDS(on) | RDS(on) | @10V | 10 | m | ||
| Continuous Drain Current | ID | 130 | A | |||
| Absolute Maximum Ratings | ||||||
| Drain-Source Voltage | VDS | (Ta=25,unless otherwise noted) | 150 | V | ||
| Gate-Source Voltage | VGS | (Ta=25,unless otherwise noted) | 20 | V | ||
| Continuous Drain Current | ID | (Tc=25) | 130 | A | ||
| Continuous Drain Current | ID | (Tc=100) | 87 | A | ||
| Pulsed Drain Current | IDM | 520 | A | |||
| Single Pulse Avalanche Energy | EAS | (Note 1) | 1056 | mJ | ||
| Power Dissipation | PD | (Tc=25) | 370 | W | ||
| Thermal Resistance Junction-Case | RJC | 0.34 | /W | |||
| Storage Temperature Range | TSTG | -55 | 150 | |||
| Operating Junction Temperature Range | TJ | -55 | 150 | |||
| Electrical Characteristics | ||||||
| Drain-Source Breakdown Voltage | BVDSS | VGS=0V , ID=250uA | 150 | - | - | V |
| Drain-Source Leakage Current | IDSS | VDS=120V , VGS=0V , TJ=25 | - | - | 1 | uA |
| Gate-Source Leakage Current | IGSS | VGS=20V , VDS=0V | - | - | 100 | nA |
| Gate Threshold Voltage | VGS(th) | VGS=VDS , ID =250uA | 3.0 | 4.0 | 5.0 | V |
| Static Drain-Source On-Resistance | RDS(ON) | VGS=10V , ID=20A | - | 10 | 13 | m |
| Dynamic Characteristics | ||||||
| Input Capacitance | Ciss | VDS=75V , VGS=0V , f=1MHz | - | 11685 | - | pF |
| Output Capacitance | Coss | - | 375 | - | pF | |
| Reverse Transfer Capacitance | Crss | - | 296 | - | pF | |
| Total Gate Charge | Qg | VDS=75V , VGS=10V , ID=20A | - | 275 | - | nC |
| Gate-Source Charge | Qgs | - | 45 | - | nC | |
| Gate-Drain Charge | Qgd | - | 87 | - | nC | |
| Switching Characteristics | ||||||
| Turn-On Delay Time | Td(on) | VDD=75V, VGS=10V , RG=2.5, ID=20A | - | 27 | - | ns |
| Rise Time | Tr | - | 32 | - | ns | |
| Turn-Off Delay Time | Td(off) | - | 110 | - | ns | |
| Fall Time | Tf | - | 40 | - | ns | |
| Diode Characteristics | ||||||
| Diode Forward Voltage | VSD | VGS=0V , IS=1A , TJ=25 | - | - | 1.2 | V |
| Diode Continuous Current | IS | - | - | 130 | A | |
| Reverse recover time | Trr | IS=100A, di/dt=100A/us,Tj=25 | - | 57 | - | ns |
| Reverse recovery charge | Qrr | - | 175 | - | nC | |
| Package Information (TO-247) | ||||||
| Symbol | Dimensions In Millimeters | Dimensions In Inches | Min. | Max. | Min. | Max. |
| A | 4.850 - 5.150 | 0.191 - 0.200 | ||||
| A1 | 2.200 - 2.600 | 0.087 - 0.102 | ||||
| b2 | 1.800 - 2.200 | 0.071 - 0.087 | ||||
| b | 1.000 - 1.400 | 0.039 - 0.055 | ||||
| b1 | 2.800 - 3.200 | 0.110 - 0.126 | ||||
| c | 0.500 - 0.700 | 0.020 - 0.028 | ||||
| c1 | 1.900 - 2.100 | 0.075 - 0.083 | ||||
| D | 15.450 - 15.750 | 0.608 - 0.620 | ||||
| E1 | 3.500 REF. | 0.138 REF. | ||||
| E2 | 3.600 REF. | 0.142 REF. | ||||
| L | 40.900 - 41.300 | 1.610 - 1.626 | ||||
| L1 | 24.800 - 25.100 | 0.976 - 0.988 | ||||
| L2 | 20.300 - 20.600 | 0.799 - 0.811 | ||||
| 7.100 - 7.300 | 0.280 - 0.287 | |||||
| e | 5.450 TYP. | 0.215 TYP. | ||||
| H1 | 5.980 REF. | 0.235 REF. | ||||
| h | 0.000 - 0.300 | 0.000 - 0.012 | ||||
2504101957_Siliup-SP015N10HTF_C41354993.pdf
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