Complementary MOSFET Device Siliup SP4606BCP8 with 30V Drain Source Voltage Lead Free Surface Mount

Key Attributes
Model Number: SP4606BCP8
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
6A;5A
Operating Temperature -:
-55℃~+150℃
RDS(on):
16mΩ@10V;40mΩ@10V
Gate Threshold Voltage (Vgs(th)):
1.5V@250uA;1.6V@250uA
Type:
N-Channel + P-Channel
Reverse Transfer Capacitance (Crss@Vds):
51pF;57pF
Number:
1 N-Channel + 1 P-Channel
Output Capacitance(Coss):
62pF;72pF
Input Capacitance(Ciss):
416pF;501pF
Pd - Power Dissipation:
2W
Gate Charge(Qg):
5nC@4.5V;9nC@10V
Mfr. Part #:
SP4606BCP8
Package:
SOP-8
Product Description

Product Overview

The SP4606BCP8 is a 30V complementary MOSFET from Siliup Semiconductor Technology Co. Ltd. This device offers high power and current handling capabilities, making it suitable for applications such as battery protection, load switching, and power management. It is available in a lead-free, surface mount SOP-8L package and has undergone 100% single pulse avalanche energy testing.

Product Attributes

  • Brand: Siliup Semiconductor Technology Co. Ltd.
  • Product Type: Complementary MOSFET
  • Lead Status: Lead-free product acquired
  • Package Type: Surface mount
  • Testing: 100% Single Pulse avalanche energy Test

Technical Specifications

Parameter Symbol N-Channel Conditions N-Channel Value P-Channel Conditions P-Channel Value Unit
Drain-Source Voltage V(BR)DSS 30V -30V V
VGS=0V , ID=250uA 30 VGS=0V , ID=-250uA -30 V
Gate-Source Voltage VGS 20V 20V V
V
Continuous Drain Current ID 6A -5A A
VGS=10V VGS=-10V A
Pulsed Drain Current IDM 24A -20A A
A
Single Pulse Avalanche Energy EAS 10.5 mJ 19 mJ mJ
VDD=15V,VGS=10V,L=0.5mH,RG=25 VDD=-15V,VGS=-10V,L=0.5mH,RG=25 mJ
Power Dissipation PD 2 W
Thermal Resistance Junction-to-Ambient RJC 62.5 /W /W
Storage Temperature Range TSTG -55 to 150
Operating Junction Temperature Range TJ -55 to 150
Drain-Source Breakdown Voltage BVDSS VGS=0V , ID=250uA 30 VGS=0V , ID=-250uA -30 V
Drain-Source Leakage Current IDSS VDS=24V , VGS=0V , TJ=25 1 uA VDS=-24V , VGS=0V , TJ=25 -1 uA uA
Gate-Source Leakage Current IGSS VGS=20V , VDS=0V 100 nA VGS=20V , VDS=0V 100 nA nA
Gate Threshold Voltage VGS(th) VGS=VDS , ID =250uA 1 - 2.2 VGS=VDS , ID =-250uA -1 - -3 V
Static Drain-Source On-Resistance RDS(ON) VGS=10V , ID=1A 16 - 20 m VGS=-10V , ID=-4.1A 40 - 50 m m
Static Drain-Source On-Resistance RDS(ON) VGS=4.5V , ID=1A 24 - 32 m VGS=-4.5V , ID=-3A 60 - 80 m m
Input Capacitance Ciss VDS=15V , VGS=0V , f=1MHz 416 pF VDS=-15V , VGS=0V , f=1MHz 501 pF pF
Output Capacitance Coss 62 pF 72 pF pF
Reverse Transfer Capacitance Crss 51 pF 57 pF pF
Total Gate Charge Qg VDS=20V , VGS=4.5V , ID=6A 5 nC VDS=-15V , VGS=-10V , ID=-5A 9 nC nC
Gate-Source Charge Qgs 1.11 nC 1.5 nC nC
Gate-Drain Charge Qgd 2.61 nC 2.3 nC nC
Turn-On Delay Time Td(on) VDD=12V, VGS=10V , RG=3, ID=6A 7.7 nS VDD=-15V, VGS=-10V , RG=3, ID=-1A 8.6 nS nS
Rise Time Tr 46 nS 5.0 nS nS
Turn-Off Delay Time Td(off) 11 nS 28.2 nS nS
Fall Time Tf 3.6 nS 13.5 nS nS
Diode Forward Voltage VSD VGS=0V , IS=1A , TJ=25 1.2 V VGS=0V , IS=-1A , TJ=25 -1.2 V V
Maximum Body-Diode Continuous Current IS 6 A -5 A A
Reverse Recovery Time Trr IS=10A, di/dt=100A/us, Tj=25 18 nS IS=-5A, di/dt=100A/us, Tj=25 31 nS nS
Reverse Recovery Charge Qrr 2 nC 10 nC nC

Package Information (SOP-8L)

Symbol Dimensions In Millimeters (Min.) Dimensions In Millimeters (Max.)
A 1.35 1.75
A1 0.10 0.25
A2 1.35 1.55
b 0.33 0.51
c 0.17 0.25
D 4.80 5.00
e 1.27 REF.
E 5.80 6.20
E1 3.80 4.00
L 0.40 1.27
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2504101957_Siliup-SP4606BCP8_C22385403.pdf

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