High Power 60V Dual N Channel MOSFET Siliup 2N7002DW for Battery Switch and DC DC Converter Circuits
Key Attributes
Model Number:
2N7002DW
Product Custom Attributes
Drain To Source Voltage:
60V
Current - Continuous Drain(Id):
300mA
Operating Temperature -:
-55℃~+150℃
RDS(on):
1.7Ω@10V;1.8Ω@4.5V
Gate Threshold Voltage (Vgs(th)):
1.5V@250uA
Reverse Transfer Capacitance (Crss@Vds):
5pF
Number:
2 N-Channel
Output Capacitance(Coss):
10pF
Input Capacitance(Ciss):
28pF
Pd - Power Dissipation:
150mW
Gate Charge(Qg):
1.7nC@4.5V
Mfr. Part #:
2N7002DW
Package:
SOT-363
Product Description
Product Overview
The 2N7002DW is a 60V Dual N-Channel MOSFET from Siliup Semiconductor Technology Co. Ltd. It offers high power and current handling capability in a surface mount package. This MOSFET is suitable for applications such as battery switches and DC/DC converters.
Product Attributes
- Brand: Siliup Semiconductor Technology Co. Ltd.
- Product Line: 2N7002DW
- Technology: Siliup Semiconductor Technology
Technical Specifications
| Parameter | Symbol | Conditions | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|---|
| Product Summary | ||||||
| Drain-Source Voltage | V(BR)DSS | 60 | V | |||
| RDS(on) Typ. @10V | RDS(on)TYP | @10V | 1.7 | |||
| RDS(on) Typ. @4.5V | RDS(on)TYP | @4.5V | 1.8 | |||
| Continuous Drain Current | ID | 300 | mA | |||
| Absolute Maximum Ratings (Ta=25, unless otherwise noted) | ||||||
| Drain-Source Voltage | VDSS | 60 | V | |||
| Gate-Source Voltage | VGSS | 20 | V | |||
| Continuous Drain Current | ID | 300 | mA | |||
| Pulse Drain Current | IDM | Tested | 1200 | mA | ||
| Power Dissipation | PD | 150 | mW | |||
| Thermal Resistance Junction-to-Ambient | RJA | 833 | C/W | |||
| Storage Temperature Range | TSTG | -55 | 150 | C | ||
| Operating Junction Temperature Range | TJ | -55 | 150 | C | ||
| Electrical Characteristics (Ta=25, unless otherwise noted) | ||||||
| Static Characteristics | ||||||
| Drain-Source Breakdown Voltage | BVDSS | VGS=0V , ID=250A | 60 | - | - | V |
| Drain-Source Leakage Current | IDSS | VDS=48V , VGS=0V | - | - | 1 | uA |
| Gate-Source Leakage Current | IGSS | VGS=20V , VDS=0V | - | - | 1 | uA |
| Gate Threshold Voltage | VGS(th) | VDS=VGS , ID=250A | 1 | 1.5 | 2.5 | V |
| Static Drain-Source On-Resistance | RDS(ON) | VGS =10V, ID =500mA | - | 1.7 | 3 | |
| Static Drain-Source On-Resistance | RDS(ON) | VGS =4.5V, ID =200mA | - | 1.8 | 4 | |
| Dynamic Characteristics | ||||||
| Input Capacitance | Ciss | VDS=25V , VGS=0V , f=1MHz | - | 28 | - | pF |
| Output Capacitance | Coss | - | 10 | - | pF | |
| Reverse Transfer Capacitance | Crss | - | 5 | - | pF | |
| Total Gate Charge | Qg | VDS=10V , VGS=4.5V , ID=300mA | - | 1.7 | - | nC |
| Gate-Source Charge | Qgs | - | 0.35 | - | ||
| Gate-Drain Charge | Qg | - | 0.5 | - | ||
| Switching Characteristics | ||||||
| Turn-On Delay Time | td(on) | VDD=30V VGS=10V , RG=25 , ID=300mA | - | 3 | - | nS |
| Turn-On Rise Time | tr | - | 17 | - | ||
| Turn-Off Delay Time | td(off) | - | 10 | - | ||
| Turn-Off Fall Time | tf | - | 21 | - | ||
| Source-Drain Diode Characteristics | ||||||
| Diode Forward Voltage | VSD | VGS=0V , IS=1A , TJ=25 | - | - | 1.2 | V |
| Package Information: SOT-363 | ||||||
| Symbol | Dimensions In Millimeters | Min. | Max. | |||
| A | 0.90 | 1.10 | ||||
| A1 | 0.00 | 0.10 | ||||
| A2 | 0.90 | 1.00 | ||||
| b | 0.15 | 0.35 | ||||
| c | 0.10 | 0.15 | ||||
| D | 2.00 | 2.20 | ||||
| E1 | 1.15 | 1.35 | ||||
| E | 2.15 | 2.40 | ||||
| e | TYP. | 0.65 | ||||
| e1 | 1.20 | 1.40 | ||||
| L | 0.26 | 0.46 | ||||
2504101957_Siliup-2N7002DW_C41354822.pdf
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