High Current MOSFET Siliup SP60N06HTQ 60V N Channel with Low Gate Charge and Avalanche Energy Tested
Key Attributes
Model Number:
SP60N06HTQ
Product Custom Attributes
Drain To Source Voltage:
60V
Current - Continuous Drain(Id):
90A
RDS(on):
6mΩ@10V
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
3V@250uA
Reverse Transfer Capacitance (Crss@Vds):
156pF
Number:
1 N-channel
Output Capacitance(Coss):
295pF
Input Capacitance(Ciss):
5.15nF
Pd - Power Dissipation:
125W
Gate Charge(Qg):
91nC@10V
Mfr. Part #:
SP60N06HTQ
Package:
TO-220
Product Description
Product Overview
The SP60N06HTQ is a 60V N-Channel MOSFET from Siliup Semiconductor Technology Co. Ltd. Designed for power switching applications, DC-DC converters, and power management, this MOSFET offers fast switching, low gate charge, and low Rdson. It features 100% single pulse avalanche energy testing, making it a reliable component for demanding electronic designs.
Product Attributes
- Brand: Siliup Semiconductor Technology Co. Ltd.
- Product Code: SP60N06HTQ
- Marking: 60N06H
- Package Type: TO-220-3L
Technical Specifications
| Parameter | Symbol | Test Condition | Min | Typ | Max | Unit |
|---|---|---|---|---|---|---|
| Product Summary | ||||||
| V(BR)DSS | 60 | V | ||||
| RDS(on)TYP | @10V | 6 | m | |||
| ID | 90 | A | ||||
| Absolute Maximum Ratings (Ta=25, unless otherwise noted) | ||||||
| Drain-Source Voltage | VDS | 60 | V | |||
| Gate-Source Voltage | VGS | 20 | V | |||
| Continuous Drain Current (Tc=25) | ID | 90 | A | |||
| Continuous Drain Current (Tc=100) | ID | 60 | A | |||
| Pulsed Drain Current | IDM | 360 | A | |||
| Single Pulse Avalanche Energy | EAS | Note 1 | 324 | mJ | ||
| Power Dissipation (Tc=25) | PD | 125 | W | |||
| Thermal Resistance Junction-to-Case | RJC | 1.0 | /W | |||
| Storage Temperature Range | TSTG | -55 | 150 | |||
| Operating Junction Temperature Range | TJ | -55 | 150 | |||
| Electrical Characteristics (Ta=25, unless otherwise noted) | ||||||
| Drain-Source Breakdown Voltage | BVDSS | VGS=0V , ID=250uA | 60 | - | - | V |
| Drain Cut-Off Current | IDSS | VDS=48V , VGS=0V , TJ=25 | - | - | 1 | A |
| Gate Leakage Current | IGSS | VGS=20V , VDS=0V | - | - | 100 | nA |
| Gate Threshold Voltage | VGS(th) | VGS=VDS , ID =250uA | 2.0 | 3.0 | 4.0 | V |
| Static Drain-Source On-Resistance | RDS(ON) | VGS=10V , ID=20A | - | 6 | 7.5 | m |
| Dynamic Characteristics | ||||||
| Input Capacitance | Ciss | VDS=30V , VGS=0V , f=1MHz | - | 5150 | - | pF |
| Output Capacitance | Coss | - | 295 | - | ||
| Reverse Transfer Capacitance | Crss | - | 156 | - | ||
| Total Gate Charge | Qg | VDS=30V , VGS=10V , ID=20A | - | 91 | - | nC |
| Gate-Source Charge | Qgs | - | 18 | - | ||
| Gate-Drain Charge | Qg d | - | 20 | - | ||
| Switching Characteristics | ||||||
| Turn-On Delay Time | td(on) | VDD=30V VGS=10V,RG=3, ID=20A | - | 11 | - | nS |
| Rise Time | tr | - | 46 | - | ||
| Turn-Off Delay Time | td(off) | - | 91 | - | ||
| Fall Time | tf | - | 78 | - | ||
| Drain-Source Body Diode Characteristics | ||||||
| Source-Drain Diode Forward Voltage | VSD | IS = 1A, VGS = 0V | - | - | 1.2 | V |
| Maximum Body-Diode Continuous Current | IS | - | - | 90 | A | |
| Reverse Recovery Time | Trr | IS=20A, di/dt=100A/us, TJ=25 | - | 27 | - | nS |
| Reverse Recovery Charge | Qrr | - | 16 | - | nC | |
| Package Information (TO-220-3L) | ||||||
| Symbol | Dimensions In Millimeters | Dimensions In Inches | Min. | Max. | Min. | Max. |
| A | 4.400 - 4.600 | 0.173 - 0.181 | ||||
| A1 | 2.250 - 2.550 | 0.089 - 0.100 | ||||
| b | 0.710 - 0.910 | 0.028 - 0.036 | ||||
| b1 | 1.170 - 1.370 | 0.046 - 0.054 | ||||
| c | 0.330 - 0.650 | 0.013 - 0.026 | ||||
| c1 | 1.200 - 1.400 | 0.047 - 0.055 | ||||
| D | 9.910 - 10.250 | 0.390 - 0.404 | ||||
| E | 8.950 - 9.750 | 0.352 - 0.384 | ||||
| E1 | 12.650 - 13.050 | 0.498 - 0.514 | ||||
| e | 2.540 TYP. | 0.100 TYP. | ||||
| e1 | 4.980 - 5.180 | 0.196 - 0.204 | ||||
| F | 2.650 - 2.950 | 0.104 - 0.116 | ||||
| H | 7.900 - 8.100 | 0.311 - 0.319 | ||||
| h | 0.000 - 0.300 | 0.000 - 0.012 | ||||
| L | 12.900 - 13.400 | 0.508 - 0.528 | ||||
| L1 | 2.850 - 3.250 | 0.112 - 0.128 | ||||
| V | 6.900 REF. | 0.276 REF. | ||||
| 3.400 - 3.800 | 0.134 - 0.150 | |||||
Note: 1. The test condition is VDD=30V, VGS=10V, L=0.5mH, RG=25
Order Information:
| Device | Package | Unit/Tube |
|---|---|---|
| SP60N06HTQ | TO-220-3L | 50 |
2504101957_Siliup-SP60N06HTQ_C41355059.pdf
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