Power switching 60V P Channel MOSFET Siliup SP60P05GTD with low gate charge and fast switching speed
Key Attributes
Model Number:
SP60P05GTD
Product Custom Attributes
Drain To Source Voltage:
60V
Current - Continuous Drain(Id):
130A
Operating Temperature -:
-55℃~+150℃
RDS(on):
10mΩ@4.5V
Gate Threshold Voltage (Vgs(th)):
3V@250uA
Reverse Transfer Capacitance (Crss@Vds):
54.3pF
Number:
1 P-Channel
Output Capacitance(Coss):
2.044nF
Input Capacitance(Ciss):
6.185nF
Pd - Power Dissipation:
153W
Gate Charge(Qg):
98nC@10V
Mfr. Part #:
SP60P05GTD
Package:
TO-263
Product Description
Product Overview
The SP60P05GTD is a 60V P-Channel Power MOSFET from Siliup Semiconductor Technology Co. Ltd. Designed for power switching applications, DC-DC converters, and power management, this MOSFET features fast switching, low gate charge, and low RDS(on). It is 100% tested for single pulse avalanche energy, making it suitable for demanding power electronic circuits.
Product Attributes
- Brand: Siliup Semiconductor Technology Co. Ltd.
- Product Code: SP60P05GTD
- Package: TO-263 (G:1 D:2 S:3)
Technical Specifications
| Parameter | Symbol | Test Condition | Min | Typ | Max | Unit |
|---|---|---|---|---|---|---|
| Product Summary | ||||||
| Breakdown Voltage (Drain-Source) | V(BR)DSS | -60 | V | |||
| RDS(on) | RDS(on)TYP | -10V | 5.5 | 7.4 | m | |
| RDS(on) | RDS(on)TYP | -4.5V | 7.5 | 10.0 | m | |
| Continuous Drain Current | ID | -130 | A | |||
| Absolute Maximum Ratings | ||||||
| Drain Source Voltage | VDS | (Ta=25) | -60 | V | ||
| Gate Source Voltage | VGS | 20 | V | |||
| Continuous Drain Current | ID | (Tc=25) | -130 | A | ||
| Continuous Drain Current | ID | (Tc=100) | -87 | A | ||
| Pulsed Drain Current | IDM | -520 | A | |||
| Power Dissipation | PD | (Tc=25) | 153 | W | ||
| Single Pulsed Avalanche Energy | EAS | (Tj=25, VDD=50V, VGS=10V, L=0.5mH, Rg=25m) | 1092 | mJ | ||
| Thermal Resistance, Junction-Case | RJC | 0.82 | /W | |||
| Storage Temperature Range | TSTG | -55 | 150 | |||
| Operating Junction Temperature Range | TJ | -55 | 150 | |||
| Electrical Characteristics | ||||||
| Drain-Source Breakdown Voltage | BVDSS | VGS=0V, ID=-250A | -60 | V | ||
| Drain Cut-Off Current | IDSS | VDS=-48V, VGS=0V | -1 | A | ||
| Gate Leakage Current | IGSS | VGS=20V, VDS=0V | 0.1 | A | ||
| Gate Threshold Voltage | VGS(th) | VDS=VGS, ID=-250A | -1.0 | -2.0 | -3.0 | V |
| Drain-Source ON Resistance | RDS(ON) | VGS=-10V, ID=-30A | 5.5 | 7.4 | m | |
| Drain-Source ON Resistance | RDS(ON) | VGS=-4.5V, ID=-30A | 7.5 | 10.0 | m | |
| Dynamic Characteristics | ||||||
| Input Capacitance | Ciss | VDS =-30V, VGS =0V, f = 1MHz | 6185 | pF | ||
| Output Capacitance | Coss | 2044 | pF | |||
| Reverse Transfer Capacitance | Crss | 54.3 | pF | |||
| Switching Characteristics | ||||||
| Total Gate Charge | Qg | VDS= -30V, ID= -40A, VGS= -10V | 98 | nC | ||
| Gate-Source Charge | Qgs | 28 | nC | |||
| Gate-Drain Charge | Qg d | 18 | nC | |||
| Turn-On Delay Time | td(on) | VDD= -30V, ID= -40A, VGS= -10V, RG=2.6 | 18 | ns | ||
| Rise Time | tr | 52 | ns | |||
| Turn-Off Delay Time | td(off) | 135 | ns | |||
| Fall Time | tf | 168 | ns | |||
| Drain-Source Body Diode Characteristics | ||||||
| Source-Drain Diode Forward Voltage | VSD | IS = -1A, VGS = 0V | -1.2 | V | ||
| Maximum Body-Diode Continuous Current | IS | -130 | A | |||
| Reverse Recovery Time | Trr | IS=-40A, di/dt=200A/us, TJ=25 | 65 | ns | ||
| Reverse Recovery Charge | Qrr | 238 | nC | |||
Package Information (TO-263)
| Symbol | Dimensions In Millimeters | Dimensions In Inches | ||
|---|---|---|---|---|
| Min. | Max. | Min. | Max. | |
| A | 4.470 | 4.670 | 0.176 | 0.184 |
| A1 | 0.000 | 0.150 | 0.000 | 0.006 |
| B | 1.120 | 1.420 | 0.044 | 0.056 |
| b | 0.710 | 0.910 | 0.028 | 0.036 |
| b1 | 1.170 | 1.370 | 0.046 | 0.054 |
| c | 0.310 | 0.530 | 0.012 | 0.021 |
| c1 | 1.170 | 1.370 | 0.046 | 0.054 |
| D | 10.010 | 10.310 | 0.394 | 0.406 |
| E | 8.500 | 8.900 | 0.335 | 0.350 |
| e | 2.540 TYP. | 0.100 TYP. | ||
| e1 | 4.980 | 5.180 | 0.196 | 0.204 |
| L | 14.940 | 15.500 | 0.588 | 0.610 |
| L1 | 4.950 | 5.450 | 0.195 | 0.215 |
| L2 | 2.340 | 2.740 | 0.092 | 0.108 |
| L3 | 1.300 | 1.700 | 0.051 | 0.067 |
| 0 | 8 | 0 | 8 | |
| V | 5.600 REF. | 0.220 REF. |
2505291610_Siliup-SP60P05GTD_C48888452.pdf
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