Low gate charge 30 volt N Channel MOSFET Siliup SP30N01ATO designed for power switching applications
Key Attributes
Model Number:
SP30N01ATO
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
210A
RDS(on):
0.8mΩ@10V;1.2mΩ@4.5V
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
1.8V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
851pF
Number:
1 N-channel
Output Capacitance(Coss):
1.219nF
Pd - Power Dissipation:
120W
Input Capacitance(Ciss):
9.262nF
Gate Charge(Qg):
160nC@10V
Mfr. Part #:
SP30N01ATO
Package:
TOLL-8L
Product Description
Product Overview
The SP30N01ATO is a 30V N-Channel MOSFET from Siliup Semiconductor Technology Co. Ltd. Designed for power switching applications, DC-DC converters, and power management, this MOSFET offers fast switching speeds, low gate charge, and low RDS(on). It features 100% single pulse avalanche energy testing and is available in a TOLL package.
Product Attributes
- Brand: Siliup Semiconductor Technology Co. Ltd.
- Product Code: SP30N01ATO
- Package: TOLL
- Material: Silicon
- Channel Type: N-Channel
- Product Series: SP30N01ATO
Technical Specifications
| Parameter | Symbol | Test Condition | Min | Typ | Max | Unit |
|---|---|---|---|---|---|---|
| Product Summary | ||||||
| V(BR)DSS | V(BR)DSS | 30 | V | |||
| RDS(on)TYP | RDS(on) | @10V | 0.8 | m | ||
| RDS(on)TYP | RDS(on) | @4.5V | 1.2 | m | ||
| ID | ID | 210 | A | |||
| Absolute Maximum Ratings | ||||||
| Drain-Source Voltage | VDS | 30 | V | |||
| Gate-Source Voltage | VGS | 20 | V | |||
| Continuous Drain Current (Tc=25) | ID | (Tc=25) | 210 | A | ||
| Continuous Drain Current (Tc=100) | ID | (Tc=100) | 140 | A | ||
| Pulsed Drain Current | IDM | 840 | A | |||
| Single Pulse Avalanche Energy | EAS | 1188 | mJ | |||
| Power Dissipation (Tc=25) | PD | (Tc=25) | 120 | W | ||
| Thermal Resistance Junction-to-Case | RJC | 1.04 | /W | |||
| Storage Temperature Range | TSTG | -55 | 150 | |||
| Operating Junction Temperature Range | TJ | -55 | 150 | |||
| Electrical Characteristics | ||||||
| Drain-Source Breakdown Voltage | BVDSS | ID = 250A, VGS = 0V | 30 | 35 | - | V |
| Drain Cut-Off Current | IDSS | VDS = 24V, VGS = 0V | - | - | 1 | A |
| Gate Leakage Current | IGSS | VGS = 20V, VDS = 0V | - | - | 0.1 | A |
| Gate Threshold Voltage | VGS(th) | VDS = VGS, ID = 250A | 1 | 1.8 | 2.5 | V |
| Drain-Source ON Resistance | RDS(ON) | VGS = 10V, ID = 30A | - | 0.8 | 1 | m |
| Drain-Source ON Resistance | RDS(ON) | VGS = 4.5V, ID = 20A | - | 1.2 | 1.6 | m |
| Dynamic Characteristics | ||||||
| Input Capacitance | Ciss | VDS =15V, VGS = 0V, f = 1.0MHz | - | 10130 | - | pF |
| Output Capacitance | Coss | - | 1148 | - | pF | |
| Reverse Transfer Capacitance | Crss | - | 944 | - | pF | |
| Total Gate Charge | Qg | VDS=15V , VGS=10V , ID=30A | - | 160 | - | nC |
| Gate-Source Charge | Qgs | - | 22 | - | nC | |
| Gate-Drain Charge | Qgd | - | 35 | - | nC | |
| Switching Characteristics | ||||||
| Turn-On Delay Time | td(on) | VGS = 10V, VDS = 15V, RL = 15 RG = 2.5 | - | 25 | - | nS |
| Rise Time | tr | - | 25.5 | - | ||
| Turn-Off Delay Time | td(off) | - | 93 | - | ||
| Fall Time | tf | - | 37 | - | ||
| Drain-Source Body Diode Characteristics | ||||||
| Source-Drain Diode Forward Voltage | VSD | IS = 1A, VGS = 0V | - | - | 1.2 | V |
| Maximum Body-Diode Continuous Current | IS | - | - | 170 | A | |
| Body Diode Reverse Recovery Time | Trr | IS=20A, di/dt=100A/us, TJ=25 | - | 36 | - | nS |
| Body Diode Reverse Recovery Charge | Qrr | - | 42 | - | nC | |
| Package Information | ||||||
| Package Type | TOLL | |||||
| Dimensions (mm) | Min. | Nom. | Max. | |||
| A | 2.20 | 2.30 | 2.40 | |||
| b | 0.65 | 0.75 | 0.85 | |||
| C | 0.508 | REF | ||||
| D | 10.25 | 10.40 | 10.55 | |||
| D1 | 2.85 | 3.00 | 3.15 | |||
| E | 9.75 | 9.90 | 10.05 | |||
| E1 | 9.65 | 9.80 | 9.95 | |||
| E2 | 8.95 | 9.10 | 9.25 | |||
| E3 | 7.25 | 7.40 | 7.55 | |||
| e | 1.20 | BSC | ||||
| F | 1.05 | 1.20 | 1.35 | |||
| H | 11.55 | 11.70 | 11.85 | |||
| H1 | 6.03 | 6.18 | 6.33 | |||
| H2 | 6.85 | 7.00 | 7.15 | |||
| H3 | 3.00 | BSC | ||||
| L | 1.55 | 1.70 | 1.85 | |||
| L1 | 0.55 | 0.7 | 0.85 | |||
| L2 | 0.45 | 0.6 | 0.75 | |||
| M | 0.08 | REF | ||||
| 8 | 10 | 12 | ||||
| K | 4.25 | 4.40 | 4.55 | |||
| Order Information | ||||||
| Device | Package | Unit/Tape | ||||
| SP30N01ATO | TOLL | 2000 | ||||
2504101957_Siliup-SP30N01ATO_C41354848.pdf
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