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quality high frequency power switching mosfet Siliup SP60N05GTD 60 volt n channel with low gate charge and low r dson factory
quality high frequency power switching mosfet Siliup SP60N05GTD 60 volt n channel with low gate charge and low r dson factory

high frequency power switching mosfet Siliup SP60N05GTD 60 volt n channel with low gate charge and low r dson

Key Attributes
Model Number: SP60N05GTD
Product Custom Attributes
Drain To Source Voltage:
60V
Current - Continuous Drain(Id):
100A
RDS(on):
4.5mΩ@10V;5.5mΩ@4.5V
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
1.6V@250uA
Reverse Transfer Capacitance (Crss@Vds):
19pF
Number:
1 N-channel
Output Capacitance(Coss):
660pF
Input Capacitance(Ciss):
2.304nF
Pd - Power Dissipation:
95W
Gate Charge(Qg):
37.5nC@10V
Mfr. Part #:
SP60N05GTD
Package:
TO-263-3L
Product Description

Product Overview

The SP60N05GTD is a 60V N-Channel Power MOSFET from Siliup Semiconductor Technology Co. Ltd. It features fast switching, low gate charge, and low RDS(on), utilizing advanced split gate trench technology. This MOSFET is 100% tested for single pulse avalanche energy and is designed for power switching applications, including hard switched and high-frequency circuits, as well as uninterruptible power supplies (UPS). The device is available in a TO-263 package.

Product Attributes

  • Brand: Siliup Semiconductor Technology Co. Ltd.
  • Product Code: SP60N05GTD
  • Technology: Advanced Split Gate Trench Technology
  • Channel Type: N-Channel
  • Package: TO-263
  • Marking: 60N05G

Technical Specifications

Parameter Symbol Test Condition Rating Unit
Product Summary
V(BR)DSS 60 V
RDS(on)TYP @10V 4.5 m
RDS(on)TYP @4.5V 5.5 m
ID 100 A
Absolute Maximum Ratings
Drain-Source Voltage VDSS 60 V
Gate-Source Voltage VGSS 20 V
Continuous Drain Current ID (TC=25C) 100 A
Continuous Drain Current ID (TC=100C) 67 A
Pulse Drain Current IDM Tested 400 A
Single Pulse Avalanche Energy EAS 256 mJ
Power Dissipation PD (TC=25C) 95 W
Thermal Resistance Junction-to-Case RJC 1.32 C/W
Maximum Junction Temperature TJ -55 to 150 C
Storage Temperature Range TSTG -55 to 150 C
Electrical Characteristics
Drain-Source Breakdown Voltage BVDSS VGS=0V, ID=250mA 60 V
Zero Gate Voltage Drain Current IDSS VDS=48V, VGS=0V - 1 uA
Gate Leakage Current IGSS VGS=20V, VDS=0V - 100 nA
Gate Threshold Voltage VGS(th) VDS=VGS, ID=250uA 1.0 1.6 2.5 V
Drain-Source On-state Resistance RDS(ON) VGS=10V, ID=20A - 4.5 6.0 m
Drain-Source On-state Resistance RDS(ON) VGS=4.5V, ID=10A - 5.5 7.3 m
Dynamic Characteristics
Input Capacitance Ciss VGS=0V, VDS=30V, F=1MHz - 2304 pF
Output Capacitance Coss - 660 pF
Reverse Transfer Capacitance Crss - 19 pF
Total Gate Charge Qg VDS=30V, VGS=10V, ID=20A - 37.5 nC
Gate-Source Charge Qgs - 6.5
Gate-Drain Charge Qgd - 10
Switching Characteristics
Turn-On Delay Time td(on) VDD=30V, ID=20A, VGS=10V, RG=4.7 - 9 nS
Rise Time tr - 35
Turn-Off Delay Time td(off) - 32
Fall Time tf - 58
Drain-Source Body Diode Characteristics
Source-Drain Diode Forward Voltage VSD VGS=0V , IS=1A , TJ=25 - - 1.2 V
Maximum Body-Diode Continuous Current IS - - 100 A
Reverse Recovery Time trr IS=20 A,di/dt=100 A/sTJ=25 - 27 nS
Reverse Recovery Charge Qrr - 39 nC
Package Information (TO-263)
Dimensions (mm) A Min. 4.470 Max. 4.670 Inches Min. 0.176 Max. 0.184
Dimensions (mm) A1 Min. 0.000 Max. 0.150 Inches Min. 0.000 Max. 0.006
Dimensions (mm) B Min. 1.120 Max. 1.420 Inches Min. 0.044 Max. 0.056
Dimensions (mm) b Min. 0.710 Max. 0.910 Inches Min. 0.028 Max. 0.036
Dimensions (mm) b1 Min. 1.170 Max. 1.370 Inches Min. 0.046 Max. 0.054
Dimensions (mm) c Min. 0.310 Max. 0.530 Inches Min. 0.012 Max. 0.021
Dimensions (mm) c1 Min. 1.170 Max. 1.370 Inches Min. 0.046 Max. 0.054
Dimensions (mm) D Min. 10.010 Max. 10.310 Inches Min. 0.394 Max. 0.406
Dimensions (mm) E Min. 8.500 Max. 8.900 Inches Min. 0.335 Max. 0.350
Dimensions (mm) e 2.540 TYP. Inches 0.100 TYP.
Dimensions (mm) e1 Min. 4.980 Max. 5.180 Inches Min. 0.196 Max. 0.204
Dimensions (mm) L Min. 14.940 Max. 15.500 Inches Min. 0.588 Max. 0.610
Dimensions (mm) L1 Min. 4.950 Max. 5.450 Inches Min. 0.195 Max. 0.215
Dimensions (mm) L2 Min. 2.340 Max. 2.740 Inches Min. 0.092 Max. 0.108
Dimensions (mm) L3 Min. 1.300 Max. 1.700 Inches Min. 0.051 Max. 0.067
Dimensions (mm) 0 8 Inches 0 8
Dimensions (mm) V 5.600 REF. Inches 0.220 REF.
Order Information
Device Package Unit/Tape
SP60N05GTD TO-263 800

2504101957_Siliup-SP60N05GTD_C22466770.pdf
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