PNP Switching Transistor Slkor SL3906T Featuring Epitaxial Planar Die Construction for Switching Needs

Key Attributes
Model Number: SL3906T
Product Custom Attributes
Emitter-Base Voltage(Vebo):
5V
Current - Collector Cutoff:
100nA
DC Current Gain:
100@10mA,10V
Transition Frequency(fT):
250MHz
Number:
1 PNP
Vce Saturation(VCE(sat)):
400mV
Type:
PNP
Pd - Power Dissipation:
150mW
Current - Collector(Ic):
200mA
Collector - Emitter Voltage VCEO:
40V
Operating Temperature:
-
Mfr. Part #:
SL3906T
Package:
SOT-523
Product Description

Product Overview

The SL3906T is a PNP Switching Transistor designed with an Epitaxial Planar Die Construction. It is available in a lead-free version and is complementary to other devices. This transistor is suitable for various switching applications, offering reliable performance characteristics.

Product Attributes

  • Brand: SLKormicro
  • Model Series: SL3904T / SL3906T
  • Construction: Epitaxial Planar Die
  • Availability: Also Available in Lead Free Version

Technical Specifications

Parameter Symbol Rating Unit
Absolute Maximum Ratings (Ta = 25)
Collector - Base Voltage VCBO -40 V
Collector - Emitter Voltage VCEO -40 V
Emitter - Base Voltage VEBO -5 V
Collector Current - Continuous IC -200 mA
Collector Power Dissipation PC 150 mW
Thermal Resistance, Junction to Ambient RJA 833 C/W
Junction Temperature TJ 150 C
Storage Temperature Range Tstg -55 to 150 C
Parameter Symbol Test Conditions Min Typ Max Unit
Collector-base breakdown voltage VCBO Ic= -100 A IE= 0 -40 V
Collector-emitter breakdown voltage VCEO Ic= -1 mA IB= 0 -40 V
Emitter-base breakdown voltage VEBO IE= -100A IC= 0 -5 V
Collector-base cut-off current ICBO VCB= -30 V , IE= 0 -100 nA
Collector cut-off current ICEX VCB=-30V,VBE(off)= 3V -50 nA
Emitter cut-off current IEBO VEB= -5V , IC=0 -100 nA
DC current gain hFE(1) VCE= -10V, IC=- 0.1mA 60
hFE(2) VCE= -10V, IC= -1mA 80
hFE(3) VCE= -10V, IC=- 10mA 100 300
hFE(4) VCE= -10V, IC= -50mA 60
hFE(5) VCE= -10V, IC= -100mA 30
Collector-emitter saturation voltage VCE(sat) IC=-10 mA, IB=-1mA -0.25
IC= -50 mA, IB= -5mA -0.4
Base-emitter saturation voltage VBE(sat) IC=-10 mA, IB=-1mA -0.65 -0.85 V
IC= -50 mA, IB= -5mA -0.95 V
Delay time td VCC=-3V, VBE(OFF)= 0.5V 35 nS
Rise time tr IC=-10mA , IB1=-1mA 35 nS
Storage time ts VCC=-3V, IC=-10mA, IB1=IB2=-1mA 225 nS
Fall time tf 75 nS
Noise figure NF VCE=-5V,Ic= -0.1mA 4 dB
Collector input capacitance Cib VEB= -0.5V, IE= 0,f=1MHz 10 pF
Collector output capacitance Cob VCB= -5V, IE= 0,f=1MHz 4.5 pF
Transition frequency fT VCE= -20V, IC= -10mA,f=100MHz 250 MHz
Dimensions (mm) A A1 bp c D E e e1 HE Lp Q v w
Min 0.8 0.00 0.15 0.08 1.40 1.20 - 0.95 1.70 0.30 0.20 0.00 0.00
Typ 0.95 0.05 0.20 0.10 1.50 1.30 0.50 1.00 1.80 0.40 0.25 0.05 0.05
Max 1.10 0.10 0.25 0.12 1.60 1.40 - 1.05 1.90 0.50 0.30 0.10 0.10

Outline Drawing: SOT-523

Simplified outline (SOT-523) with pinout: 1. Base, 2. Emitter, 3. Collector.


2202132030_Slkor-SL3906T_C2843325.pdf

Contact Our Experts And Get A Free Consultation!

Our mission is to offer "High Quality" & "Good Service" & "Fast Delivery" to help our clients to gain more profits.