Silicon PNP Epitaxial Transistor Integrated Bias Resistors TOSHIBA RN2311 TE85L F for Switching Circuits
Key Attributes
Model Number:
RN2311(TE85L,F)
Product Custom Attributes
Current - Collector(Ic):
100mA
Pd - Power Dissipation:
100mW
Collector - Emitter Voltage VCEO:
50V
Mfr. Part #:
RN2311(TE85L,F)
Package:
SOT-323(SC-70)
Product Description
Product Overview
The RN2310 and RN2311 are silicon PNP epitaxial bipolar transistors featuring integrated bias resistors. This design reduces the need for external components, leading to smaller system sizes and faster assembly times. They are suitable for switching, inverter circuits, interfacing, and driver circuits. These transistors are complementary to the RN1310 to RN1311 series.
Product Attributes
- Brand: Toshiba
- Certifications: AEC-Q101 qualified
- Material: Silicon PNP Epitaxial Type (PCT Process)
- Origin: Japan (implied by Toshiba)
Technical Specifications
| Characteristic | Symbol | RN2310 | RN2311 | Unit | Test Condition |
|---|---|---|---|---|---|
| Collector cut-off current | ICBO | -100 (Max) | -100 (Max) | nA | VCB = -50 V, IE = 0 mA |
| Emitter cut-off current | IEBO | -100 (Max) | -100 (Max) | nA | VEB = -5 V, IC = 0 mA |
| DC current gain | hFE | 120 (Min) - 400 (Max) | 120 (Min) - 400 (Max) | VCE = -5 V, IC = -1 mA | |
| Collector-emitter saturation voltage | VCE(sat) | -0.1 (Typ) - -0.3 (Max) | -0.1 (Typ) - -0.3 (Max) | V | IC = -5 mA, IB = -0.25 mA |
| Transition frequency | fT | 200 (Typ) | 200 (Typ) | MHz | VCE = -10 V, IC = -5 mA |
| Collector output capacitance | Cob | 3 (Typ) - 6 (Max) | 3 (Typ) - 6 (Max) | pF | VCB = -10 V, IE = 0 mA, f = 1 MHz |
| Input resistance | R1 | 4.7 (Typ) - 13 (Max) | 4.7 (Typ) - 13 (Max) | k | |
| Collector-base voltage | VCBO | -50 | -50 | V | |
| Collector-emitter voltage | VCEO | -50 | -50 | V | |
| Emitter-base voltage | VEBO | -5 | -5 | V | |
| Collector current | IC | -100 | -100 | mA | |
| Collector power dissipation | PC | 100 | 100 | mW | Ta = 25 |
| Junction temperature | Tj | 150 | 150 | ||
| Storage temperature | Tstg | -55 to 150 | -55 to 150 |
2410311321_TOSHIBA-RN2311-TE85L-F_C20490238.pdf
Related Products
complementary mosfets featuring xnrusemi xr20g10 with n channel and p channel fast switching capabilities
XR20G10 N-Ch and P-Ch Fast Switching MOSFETs Product Description The XR20G10 is a high-performance complementary N-channel and P-channel MOSFET series featuring extreme high cell density. This design provides excellent RDS(ON) and gate charge characteristics, making it ideal for synchronous buck ...
Surface mount digital transistor YANGJIE DTC123YUA with built-in resistors and UL94 V0 flammability rating
Product OverviewThe DTC123YUA is a digital transistor with built-in resistors, designed for surface mount applications. It simplifies circuit configuration by eliminating the need for external input resistors, making it ideal for inverter circuits. The epoxy meets UL-94 V-0 flammability rating and ...
Durable YANGJIE MG450HF12TLC2 IGBT module featuring trench technology for motion control welding and UPS
Product OverviewThe MG450HF12TLC2 is a high-performance IGBT module designed for motion/servo control, high-frequency switching applications, UPS, and welding machines. It features low Vce(sat) with Trench technology, low switching losses (particularly Eoff), a positive temperature coefficient for ...
RoHS Compliant NPN Amplifier YANGJIE S8050-H with Epoxy Casing and Collector Power Dissipation 300mW
Product OverviewThe S8050-L through S8050-H series are NPN general-purpose amplifiers manufactured by Yangzhou Yangjie Electronic Technology Co., Ltd. These components are designed for general amplification applications and feature an epoxy casing that meets UL-94 V-0 flammability rating. Halogen...
Contact Our Experts And Get A Free Consultation!
Our mission is to offer "High Quality" & "Good Service" & "Fast Delivery" to help our clients to gain more profits.
