Automotive Grade P Channel MOSFET YANGJIE YJG80GP06BQ with Split Gate Trench Technology and RoHS Compliance

Key Attributes
Model Number: YJG80GP06BQ
Product Custom Attributes
Drain To Source Voltage:
60V
Current - Continuous Drain(Id):
80A
RDS(on):
8.5mΩ@10V
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
4V@250uA
Reverse Transfer Capacitance (Crss@Vds):
220pF
Number:
1 P-Channel
Output Capacitance(Coss):
1.555nF
Pd - Power Dissipation:
120W
Input Capacitance(Ciss):
5.5nF
Gate Charge(Qg):
80.7nC@10V
Mfr. Part #:
YJG80GP06BQ
Package:
PDFN5060-8L
Product Description

Product Overview

The YJG80GP06BQ is a P-Channel Enhancement Mode Field Effect Transistor from Yangzhou Yangjie Electronic Technology Co., Ltd. Utilizing split gate trench MOSFET technology, it offers low RDS(on) and FOM with excellent stability and uniformity. This component is designed for power management, portable equipment, and 12/24V automotive systems. It meets Moisture Sensitivity Level 3 and has an epoxy that meets UL 94 V-0 flammability rating. A suffix "Q" indicates AEC-Q101 qualification.

Product Attributes

  • Brand: Yangzhou Yangjie Electronic Technology Co., Ltd.
  • Part Number: YJG80GP06BQ
  • Technology: Split gate trench MOSFET
  • Certifications: RoHS Compliant, AEC-Q101 qualified (suffix "Q")
  • Flammability Rating: UL 94 V-0
  • Moisture Sensitivity Level: 3
  • Origin: China (implied by company name and website)

Technical Specifications

ParameterSymbolConditionsMinTypMaxUnit
Absolute Maximum Ratings
Drain-source VoltageVDS-60V
Gate-source VoltageVGS±18V
Drain CurrentIDTA=25-12A
Drain CurrentIDTA=100-7.5A
Drain CurrentIDTC=25-80A
Drain CurrentIDTC=100-50A
Pulsed Drain CurrentIDM-320A
Avalanche energyEASTJ=25, VDD=-40V, VGS=-10V, L=2mH, IAS=-20A400mJ
Total Power DissipationPDTA=252.5W
Total Power DissipationPDTA=1001W
Total Power DissipationPDTC=25120W
Total Power DissipationPDTC=10048W
Junction and Storage Temperature RangeTJ ,TSTG-55+150
Thermal resistance
Thermal Resistance Junction-to-AmbientRJASteady-State4050/W
Thermal Resistance Junction-to-CaseRJCSteady-State0.81.04/W
Electrical Characteristics
Drain-Source Breakdown VoltageBVDSSVGS= 0V, ID=-250A-60V
Zero Gate Voltage Drain CurrentIDSSVDS=-60V, VGS=0V-1µA
Gate-Body Leakage CurrentIGSSVGS= ±18V, VDS=0V±100nA
Gate Threshold VoltageVGS(th)VDS= VGS, ID=-250µA-2-2.7-4V
Static Drain-Source On-ResistanceRDS(on)VGS=-10V, ID=-20A6.18.5
Diode Forward VoltageVSDIS=-20A, VGS=0V-0.9-1.3V
Gate resistanceRGf=1MHz, Open drain10Ω
Maximum Body-Diode Continuous CurrentIS-80A
Dynamic Parameters
Input CapacitanceCissVDS=-25V, VGS=0V, f=1MHz5500pF
Output CapacitanceCoss1555pF
Reverse Transfer CapacitanceCrss220pF
Switching Parameters
Total Gate ChargeQgVGS=-10V, VDS=-30V, ID=-20A80.7nC
Gate-Source ChargeQgs19nC
Gate-Drain ChargeQg d18.3nC
Reverse Recovery ChargeQrrIF=-20A, di/dt=100A/us84nC
Reverse Recovery Timetrr57.5ns
Turn-on Delay TimetD(on)VGS=-10V, VDD=-30V, RGEN=1.6Ω, ID=-20A13.2ns
Turn-on Rise Timetr27.7
Turn-off Delay TimetD(off)137.8
Turn-off fall Timetf59.5

2410121501_YANGJIE-YJG80GP06BQ_C20605811.pdf

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