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quality Low Impedance Package Silicon Carbide MOSFET Wolfspeed C3M0350120J for High Voltage DC DC Converters factory
quality Low Impedance Package Silicon Carbide MOSFET Wolfspeed C3M0350120J for High Voltage DC DC Converters factory

Low Impedance Package Silicon Carbide MOSFET Wolfspeed C3M0350120J for High Voltage DC DC Converters

Key Attributes
Model Number: C3M0350120J
Product Custom Attributes
Drain To Source Voltage:
1.2kV
Current - Continuous Drain(Id):
7.2A
Operating Temperature -:
-55℃~+150℃
RDS(on):
455mΩ
Gate Threshold Voltage (Vgs(th)):
3.6V
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
3.4pF
Pd - Power Dissipation:
40.8W
Input Capacitance(Ciss):
345pF
Output Capacitance(Coss):
20pF
Gate Charge(Qg):
13nC
Mfr. Part #:
C3M0350120J
Package:
TO-263-7
Product Description

Product Overview

The Wolfspeed C3M0350120J is a 3rd generation Silicon Carbide (SiC) MOSFET featuring a low impedance package with a dedicated driver source pin and 7mm of creepage distance. This technology offers high blocking voltage with low on-resistance and high-speed switching with low capacitances. Its fast intrinsic diode boasts low reverse recovery (Qrr). Designed for applications such as renewable energy, high voltage DC/DC converters, switch mode power supplies, and UPS, this MOSFET contributes to higher system efficiency, reduced cooling requirements, increased power density, and higher system switching frequencies by minimizing switching losses and gate ringing. It is halogen-free and RoHS compliant.

Product Attributes

  • Brand: Wolfspeed
  • Technology: Silicon Carbide (SiC) MOSFET
  • Generation: 3rd Generation
  • Compliance: Halogen free, RoHS compliant
  • Package Type: TO 263-7

Technical Specifications

Parameter Symbol Min. Typ. Max. Unit Conditions Note
Drain - Source Voltage VDS 1200 V TC = 25C
Maximum Gate - Source Voltage VGS(max) -8 +19 V
Transient Operational Gate-Source Voltage VGS op -4/15 V Static
DC Continuous Drain Current ID 7.2 A VGS = 15 V, TC = 25 C, TJ 150 C Fig. 19, Note 2
DC Continuous Drain Current ID 5 A VGS = 15 V, TC = 100 C, TJ 150 C Note 2
Pulsed Drain Current IDM 20 A VGS = 15V, TC = 25 C, tPmax limited by Tjmax Fig. 22
Power Dissipation PD 40.8 W TC = 25C, TJ = 150 C Fig. 20
Operating Junction and Storage Temperature TJ, Tstg -55 +150 C
Solder Temperature TL 260 C According to JEDEC J-STD-020
Gate Threshold Voltage VGS(th) 1.8 2.5 3.6 V VDS = VGS, ID = 1 mA Fig. 11
Gate Threshold Voltage VGS(th) 2.0 V VDS = VGS, ID = 1 mA, TJ = 150C
Zero Gate Voltage Drain Current IDSS 1 50 A VDS = 1200 V, VGS = 0 V
Gate-Source Leakage Current IGSS 10 250 nA VGS = 15 V, VDS = 0 V
Drain-Source On-State Resistance RDS(on) 350 455 m VGS = 15 V, ID = 3.6 A Fig. 4, 5, 6
Drain-Source On-State Resistance RDS(on) 525 m VGS = 15 V, ID = 3.6 A, TJ = 150C
Transconductance gfs 2.9 S VDS = 20 V, IDS = 3.6 A Fig. 7
Transconductance gfs 2.6 S VDS = 20 V, IDS = 3.6 A, TJ = 150C
Input Capacitance Ciss 345 pF VGS = 0 V, VDS = 1000 V = 1 Mhz VAC = 25 mV Fig. 17, 18
Output Capacitance Coss 20 pF VGS = 0 V, VDS = 1000 V = 1 Mhz VAC = 25 mV Fig. 17, 18
Reverse Transfer Capacitance Crss 3.4 pF VGS = 0 V, VDS = 1000 V = 1 Mhz VAC = 25 mV Fig. 17, 18
Output Capacitance Stored Energy Eoss 10.6 J Fig. 16
Turn-On Switching Energy (Body Diode FWD) Eon 46 J VDS = 800 V, VGS = -4 V/15 V, ID = 3.6 A, RG(ext) = 2.5 , L= 716 H Fig. 26, 29
Turn Off Switching Energy (Body Diode FWD) Eoff 8 J VDS = 800 V, VGS = -4 V/15 V, ID = 3.6 A, RG(ext) = 2.5 , L= 716 H Fig. 26, 29
Turn-On Delay Time td(on) 6 ns VDD = 800 V, VGS = -4 V/15 V ID = 3.6 A, RG(ext) = 0 , Timing relative to VDS Inductive load Fig. 27, 28, 29
Rise Time tr 7 ns VDD = 800 V, VGS = -4 V/15 V ID = 3.6 A, RG(ext) = 0 , Timing relative to VDS Inductive load Fig. 27, 28, 29
Turn-Off Delay Time td(off) 9 ns VDD = 800 V, VGS = -4 V/15 V ID = 3.6 A, RG(ext) = 0 , Timing relative to VDS Inductive load Fig. 27, 28, 29
Fall Time tf 11 ns VDD = 800 V, VGS = -4 V/15 V ID = 3.6 A, RG(ext) = 0 , Timing relative to VDS Inductive load Fig. 27, 28, 29
Internal Gate Resistance RG(int) 7 = 1 MHz, VAC = 25 mV
Gate to Source Charge Qgs 5.1 nC VDS = 800 V, VGS = -4 V/15 V ID = 3.6 A Per IEC60747-8-4 pg 21 Fig. 12
Gate to Drain Charge Qg d 4.6 nC VDS = 800 V, VGS = -4 V/15 V ID = 3.6 A Per IEC60747-8-4 pg 21 Fig. 12
Total Gate Charge Qg 13 nC VDS = 800 V, VGS = -4 V/15 V ID = 3.6 A Per IEC60747-8-4 pg 21 Fig. 12
Diode Forward Voltage VSD 4.5 V VGS = -4 V, ISD = 1.8 A Fig. 8, 9, 10
Diode Forward Voltage VSD 4.0 V VGS = -4 V, ISD = 1.8 A, TJ = 150C
Continuous Diode Forward Current IS 7.3 A VGS = -4 V
Diode Pulse Current IS, pulsed 20 A VGS = -4 V, pulse width tP limited by Tj max
Reverse Recover Time trr 5 nS VGS = -4 V, ISD = 3.6 A, VR = 800 V dif/dt = 3550 A/s, TJ = 150C Fig. 29
Reverse Recovery Charge Qrr 23 nC VGS = -4 V, ISD = 3.6 A, VR = 800 V dif/dt = 3550 A/s, TJ = 150C Fig. 29
Peak Reverse Recovery Current Irrm 8 A VGS = -4 V, ISD = 3.6 A, VR = 800 V dif/dt = 3550 A/s, TJ = 150C Fig. 29
Thermal Resistance from Junction to Case RJC 2.9 C/W Fig. 21

2411261437_Wolfspeed-C3M0350120J_C5241022.pdf

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