Single N Channel Power MOSFET WNM2091A 6TR from WILLSEMI with Low Gate Charge and DFN2X2 6L Package
Key Attributes
Model Number:
WNM2091A-6/TR
Product Custom Attributes
Drain To Source Voltage:
20V
Current - Continuous Drain(Id):
11.5A
RDS(on):
8.4mΩ@2.5V,8A
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
450mV
Reverse Transfer Capacitance (Crss@Vds):
235pF@10V
Number:
1 N-channel
Pd - Power Dissipation:
1.7W
Input Capacitance(Ciss):
1.634nF
Gate Charge(Qg):
18.7nC@4.5V
Mfr. Part #:
WNM2091A-6/TR
Package:
DFN-6L(2x2)
Product Description
Product Overview
The WNM2091A is a single N-Channel enhancement mode Power MOSFET from Will Semiconductor Ltd. Utilizing advanced trench technology and a super high-density cell design, it offers excellent ON resistance with low gate charge. This device is ideal for DC-DC conversion, power switch, and charging circuits, providing a small DFN2X2-6L package. The WNM2091A is Pb-free and Halogen-free.
Product Attributes
- Brand: Will Semiconductor Ltd.
- Product Code: WNM2091A
- Package: DFN2X2-6L
- Certifications: Pb-free, Halogen-free
- ESD Rating: 2000V HBM
Technical Specifications
| Parameter | Symbol | Test Conditions | Min | Typ | Max | Unit |
| Absolute Maximum Ratings | ||||||
| Drain-Source Voltage | VDS | 20 | V | |||
| Gate-Source Voltage | VGS | 10 | V | |||
| Continuous Drain Current | ID | TA=25C | 11.5 | A | ||
| TA=70C | 9.3 | A | ||||
| Pulsed Drain Current | IDM | c | 50 | A | ||
| Power Dissipation | PD | d TA=25C | 1.7 | W | ||
| TA=70C | 1.0 | W | ||||
| Operating Junction Temperature | TJ | -55 | 150 | C | ||
| Storage Temperature Range | TSTG | -55 | 150 | C | ||
| Electronics Characteristics | ||||||
| Drain-to-Source Breakdown Voltage | BVDSS | VGS = 0 V, ID = 250uA | 20 | V | ||
| Zero Gate Voltage Drain Current | IDSS | VDS =16V, VGS = 0V | 1 | A | ||
| Gate-to-source Leakage Current | IGSS | VDS = 0 V, VGS = 10V | 10 | A | ||
| Gate Threshold Voltage | VGS(TH) | VGS = VDS, ID = 250uA | 0.45 | 0.75 | 1.0 | V |
| Drain-to-source On-resistance | RDS(on) | VGS = 4.5V, ID = 11.5A | 6.8 | 8.5 | m | |
| VGS = 3.7V, ID = 9.0A | 7.2 | 9.0 | m | |||
| VGS = 2.5V, ID = 8.0A | 8.4 | 12.5 | m | |||
| VGS = 1.8V, ID = 3.5A | 12.5 | 25 | m | |||
| Input Capacitance | CISS | VGS = 0V, f = 1.0MHz, VDS = 10V | 1634 | pF | ||
| Output Capacitance | COSS | VGS = 0V, f = 1.0MHz, VDS = 10V | 286 | pF | ||
| Reverse Transfer Capacitance | CRSS | VGS = 0V, f = 1.0MHz, VDS = 10V | 235 | pF | ||
| Total Gate Charge | QG(TOT) | VGS = 4.5V, VDS =10V, ID =9A | 18.7 | nC | ||
| Threshold Gate Charge | QG(TH) | VGS = 4.5V, VDS =10V, ID =9A | 1.4 | nC | ||
| Gate-to-Source Charge | QGS | VGS = 4.5V, VDS =10V, ID =9A | 3.8 | nC | ||
| Gate-to-Drain Charge | QGD | VGS = 4.5V, VDS =10V, ID =9A | 5.2 | nC | ||
| Turn-On Delay Time | td(ON) | VGS = 4.5V, VDS = 10 V, ID=9A, RG=3 | 22.8 | ns | ||
| Rise Time | tr | VGS = 4.5V, VDS = 10 V, ID=9A, RG=3 | 42.0 | ns | ||
| Turn-Off Delay Time | td(OFF) | VGS = 4.5V, VDS = 10 V, ID=9A, RG=3 | 87.0 | ns | ||
| Fall Time | tf | VGS = 4.5V, VDS = 10 V, ID=9A, RG=3 | 75.0 | ns | ||
| Forward Voltage | VSD | VGS = 0 V, IS = 1A | 1.2 | V | ||
2411220036_WILLSEMI-WNM2091A-6-TR_C5290243.pdf
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