Fast Switching N Channel MOSFET 120V XCH XCHS3N12 with Low On Resistance and High Density Cell Design
Key Attributes
Model Number:
XCHS3N12
Product Custom Attributes
Configuration:
-
Drain To Source Voltage:
120V
Current - Continuous Drain(Id):
3A
RDS(on):
118mΩ@10V
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
1.8V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
2.7pF
Number:
1 N-channel
Input Capacitance(Ciss):
210pF
Output Capacitance(Coss):
36pF
Pd - Power Dissipation:
1.5W
Gate Charge(Qg):
5nC@10V
Mfr. Part #:
XCHS3N12
Package:
SOT-23
Product Description
Product Overview
The XCHS3N12 is a N-Channel 120V Fast Switching MOSFET featuring Split Gate Trench technology and a high-density cell design for low RDS(ON). Its excellent package design ensures efficient heat dissipation, making it suitable for DC-DC converters, power management functions, and synchronous-rectification applications.
Product Attributes
- Brand: Not specified
- Origin: Not specified
- Material: Not specified
- Color: Not specified
- Certifications: Not specified
Technical Specifications
| Parameter | Symbol | Test Condition | Min. | Typ. | Max. | Unit |
| Absolute Maximum Rating | VDS | 120 | V | |||
| VGS | 20 | V | ||||
| ID | TA = 25C | 3 | A | |||
| IDM | 1 | 12 | A | |||
| PD | TA = 25C | 1.5 | W | |||
| Thermal Characteristics | RJA | 2 | 83.3 | C/W | ||
| TJ, TSTG | -55 | 150 | C | |||
| Electrical Characteristics | V(BR)DSS | VGS = 0V, ID = 250A | 120 | - | - | V |
| IGSS | VDS = 0V, VGS = 20V | - | 100 | nA | ||
| IDSS | VDS = 120V, VGS = 0V | - | 1 | A | ||
| VGS(th) | VDS = VGS, ID = 250A | 1.4 | 1.8 | 2.2 | V | |
| RDS(on) | VGS = 10V, ID = 1A | 118 | 147 | m | ||
| RDS(on) | VGS = 4.5V, ID = 1A | 143 | 178 | m | ||
| Dynamic Characteristics | Ciss | VGS = 0V, VDS = 50V, f = 1MHz | 210 | - | pF | |
| Coss | 36 | - | pF | |||
| Crss | 2.7 | - | pF | |||
| Switching Characteristics | Qg | VDS = 50V, VGS =10V, ID =3A | 5 | - | nC | |
| Qgs | 0.7 | - | ||||
| Qgd | 1.45 | - | ||||
| Switching Characteristics | td(on) | VDD = 50V, VGS =10V, ID =3A, RG=3 | 12.8 | - | ns | |
| tr | 19.7 | - | ||||
| td(off) | 21 | - | ||||
| tf | 29 | - | ||||
| Source-Drain Diode Characteristics | VSD | IS = 3A, VGS = 0V | - | 1.2 | V | |
| IS | - | 3 | A |
2505161700_XCH-XCHS3N12_C48928121.pdf
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