Trench Power MOSFET Dual P Channel 30 Volt Load Switch High Current Rating VBsemi Elec SDM4953 VB
Key Attributes
Model Number:
SDM4953-VB
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
7.3A
Operating Temperature -:
-55℃~+150℃
RDS(on):
35mΩ@10V;40mΩ@4.5V
Gate Threshold Voltage (Vgs(th)):
1V
Type:
P-Channel
Reverse Transfer Capacitance (Crss@Vds):
185pF
Number:
2 P-Channel
Output Capacitance(Coss):
215pF
Pd - Power Dissipation:
5W
Input Capacitance(Ciss):
1.35nF
Gate Charge(Qg):
32nC@10V
Mfr. Part #:
SDM4953-VB
Package:
SO-8
Product Description
Product Overview
The SDM4953-VB is a Dual P-Channel 30-V (D-S) MOSFET featuring Trench Power MOSFET technology and 100% UIS tested. It is designed for load switch applications and offers advantages such as halogen-free compliance.
Product Attributes
- Brand: VBsemi
- Certifications: Halogen-free, RoHS Compliant
Technical Specifications
| Parameter | Symbol | Test Conditions | Min. | Typ. | Max. | Unit |
| Drain-Source Breakdown Voltage | VDS | VGS = 0 V, ID = - 250 A | - 30 | V | ||
| Gate-Source Threshold Voltage | VGS(th) | VDS = VGS, ID = - 250 A | - 1.0 | - 3.0 | V | |
| Zero Gate Voltage Drain Current | IDSS | VDS = - 30 V, VGS = 0 V | - 1 | A | ||
| On-State Drain Current | ID(on) | VDS - 10 V, VGS = - 10 V | - 30 | A | ||
| Drain-Source On-State Resistance | RDS(on) | VGS = - 10 V, ID = - 6.3 A | 0.035 | 0.045 | ||
| Forward Transconductance | gfs | VDS = - 10 V, ID = - 6.3 A | 23 | S | ||
| Input Capacitance | Ciss | VDS = - 15 V, VGS = 0 V, f = 1 MHz | 1350 | pF | ||
| Output Capacitance | Coss | VDS = - 15 V, VGS = 0 V, f = 1 MHz | 215 | pF | ||
| Reverse Transfer Capacitance | Crss | VDS = - 15 V, VGS = 0 V, f = 1 MHz | 185 | pF | ||
| Total Gate Charge | Qg | VDS = - 15 V, VGS = - 10 V, ID = - 6.3 A | 32 | 50 | nC | |
| Gate-Source Charge | Qgs | VDS = - 15 V, VGS = - 4.5 V, ID = - 6.1 A | 15 | 25 | nC | |
| Gate-Drain Charge | Qgd | VDS = - 15 V, VGS = - 4.5 V, ID = - 6.1 A | 7.5 | nC | ||
| Gate Resistance | Rg | f = 1 MHz | 5.8 | |||
| Turn-On Delay Time | td(on) | VDD = - 15 V, RL = 15 , ID - 1 A, VGEN = - 10 V, Rg = 1 | 10 | 15 | ns | |
| Rise Time | tr | VDD = - 15 V, RL = 15 , ID - 1 A, VGEN = - 10 V, Rg = 1 | 8 | 15 | ns | |
| Turn-Off Delay Time | td(off) | VDD = - 15 V, RL = 15 , ID - 1 A, VGEN = - 10 V, Rg = 1 | 45 | 70 | ns | |
| Fall Time | tf | VDD = - 15 V, RL = 15 , ID - 1 A, VGEN = - 10 V, Rg = 1 | 12 | 25 | ns | |
| Continous Source-Drain Diode Current | IS | TC = 25 C | - 4.1 | A | ||
| Body Diode Voltage | VSD | IS = - 2 A, VGS = 0 V | - 0.75 | - 1.2 | V | |
| Body Diode Reverse Recovery Time | trr | IF = - 2 A, dI/dt = 100 A/s, TJ = 25 C | 34 | 60 | ns | |
| Body Diode Reverse Recovery Charge | Qrr | IF = - 2 A, dI/dt = 100 A/s, TJ = 25 C | 22 | 40 | nC |
2504180925_VBsemi-Elec-SDM4953-VB_C5137431.pdf
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