IGBT YANGJIE DGW40N120CTLQ for automotive industrial inverter AC DC servo drive and UPS applications
Key Attributes
Model Number:
DGW40N120CTLQ
Product Custom Attributes
Pd - Power Dissipation:
428W
Td(off):
180ns
Td(on):
45ns
Operating Temperature:
-40℃~+175℃
Collector-Emitter Breakdown Voltage (Vces):
1.2kV
Input Capacitance(Cies):
2.5nF@25V
Gate-Emitter Threshold Voltage (Vge(th)@Ic):
4.8V@1.4mA
Gate Charge(Qg):
0.33uC@15V
Reverse Recovery Time(trr):
439ns
Switching Energy(Eoff):
1.7mJ
Turn-On Energy (Eon):
3.8mJ
Mfr. Part #:
DGW40N120CTLQ
Package:
TO-247
Product Description
Product Overview
The DGW40N120CTLQ is a high-performance IGBT designed for automotive and industrial applications. It features low collector-emitter saturation voltage, a maximum junction temperature of 175, and is qualified to AEC-Q101. This device includes a fast and soft recovery anti-parallel FWD, offering high short circuit capability (10s) and RoHS compliance. It is suitable for general inverters, AC/DC servo drive amplifiers, and uninterruptible power supplies.
Product Attributes
- Brand: S-M370D
- Certifications: RoHS Compliant, AEC-Q101 Qualified
Technical Specifications
| Parameter | Symbol | Conditions | Min. | Typ. | Max. | Unit |
| Collector-Emitter Breakdown Voltage | VCE | DC | 1200 | V | ||
| Collector Current | IC | TC= 25C | 80 | A | ||
| TC= 100C | 40 | |||||
| VCE=1200 V | 40 | |||||
| VCE(sat), IC=40A | 1.85 | |||||
| Diode Forward Current | IF | TC= 25C | 80 | A | ||
| TC= 100C | 40 | |||||
| IF= 40A | 1.60 | |||||
| Tj= 150C | 2.60 | |||||
| Continuous Gate-Emitter Voltage | VGE | 20 | V | |||
| Transient Gate-Emitter Voltage | VGE | (tp10s,D<0.010) | 30 | V | ||
| Turn off Safe Operating Area | VCE1200V, Tj 150C | 160 | A | |||
| Pulsed Collector Current | ICM | VGE=15V, tp limited by Tjmax | 160 | A | ||
| Diode Pulsed Current | IFpuls | tp limited by Tjmax | 160 | A | ||
| Short Circuit Withstand Time | Tsc | VGE= 15V, VCC=600VVCEM1200V | 10 | s | ||
| Power Dissipation | Ptot | Tj=175C,Tc=25C | 428 | W | ||
| Static Collector-Emitter Breakdown Voltage | BVCES | VGE=0V, IC=250A | 1200 | V | ||
| Gate Threshold Voltage | VGE(th) | VGE=VCE, IC=1.4mA | 4.8 | 5.6 | 6.5 | V |
| Collector-Emitter Saturation Voltage | VCE(sat) | VGE=15V, IC=40A | V | |||
| Tj=25C | 1.85 | |||||
| Tj=125C | 2.20 | |||||
| Tj=150C | 2.30 | 2.40 | ||||
| Zero Gate Voltage Collector Current | ICES | VCE=1200V, VGE=0V | mA | |||
| Tj= 25C | 0.25 | |||||
| Tj=150C | 5.00 | |||||
| Gate-Emitter Leakage Current | IGES | VCE= 0V, VGE= 30V | 200 | nA | ||
| Input Capacitance | Cies | VCE= 25V, VGE= 0V, f = 1MHz | 2.50 | nF | ||
| Reverse Transfer Capacitance | Cres | 0.09 | nF | |||
| Gate Charge | QG | VCC=960V,IC=40A, VGE=15V | 0.33 | uC | ||
| Short Circuit Collector Current | ISC | VGE=15V, tsc10us, Vcc=600V,Tj150C | 150 | A | ||
| Operating Junction Temperature | Tj | -40 | 175 | C | ||
| Storage Temperature | Ts | -55 | 150 | C | ||
| Soldering Temperature | wave soldering 1.6mm from case for 10s | 260 | C | |||
| Diode Forward Voltage | VF | IF= 40A | V | |||
| Tj= 25C | 1.60 | |||||
| Tj= 125C | 1.80 | 2.00 | ||||
| Tj= 150C | 1.70 | 2.60 | ||||
| Turn-on Delay Time | td(on) | VCC= 600V, IC=40A, VGE= -15V~15V, Rg=12 | ns | |||
| Tj= 25C | 45 | |||||
| Tj= 125C | 50 | |||||
| Tj= 150C | 53 | |||||
| Rise Time | tr | VCC= 600V, IC=40A, VGE= -15V~15V, Rg=12 | ns | |||
| Tj= 25C | 56 | |||||
| Tj= 125C | 58 | |||||
| Tj= 150C | 60 | |||||
| Turn-on Energy | Eon | VCC= 600V, IC=40A, VGE= -15V~15V, Rg=12 | mJ | |||
| Tj= 25C | 3.8 | |||||
| Tj= 125C | 5.4 | |||||
| Tj= 150C | 5.8 | |||||
| Turn-off Delay Time | td(off) | VCC= 600V, IC=40A, VGE= -15V~15V, Rg=12 | ns | |||
| Tj= 25C | 180 | |||||
| Tj= 125C | 240 | |||||
| Tj= 150C | 260 | |||||
| Fall Time | tf | VCC= 600V, IC=40A, VGE= -15V~15V, Rg=12 | ns | |||
| Tj= 25C | 80 | |||||
| Tj= 125C | 85 | |||||
| Tj= 150C | 90 | |||||
| Turn-off Energy | Eoff | VCC= 600V, IC=40A, VGE= -15V~15V, Rg=12 | mJ | |||
| Tj= 25C | 1.7 | |||||
| Tj= 125C | 2.7 | |||||
| Tj= 150C | 3.0 | |||||
| Reverse Recovery Current | Irr | IF=40A, VR=600V, di/dt= -520A/s | A | |||
| Tj= 25C | 14 | |||||
| Tj= 125C | 18 | |||||
| Tj= 150C | 20 | |||||
| Diode reverse recovery time | trr | IF=40A, VR=600V, di/dt= -520A/s | ns | |||
| Tj= 25C | 439 | |||||
| Tj= 125C | 628 | |||||
| Tj= 150C | 773 | |||||
| Reverse Recovery Charge | Qrr | IF=40A, VR=600V, di/dt= -520A/s | uC | |||
| Tj= 25C | 2.55 | |||||
| Tj= 125C | 6.33 | |||||
| Tj= 150C | 7.05 | |||||
| Reverse Recovery Energy | Erec | IF=40A, VR=600V, di/dt= -520A/s | mJ | |||
| Tj= 25C | 0.92 | |||||
| Tj= 125C | 2.05 | |||||
| Tj= 150C | 2.25 | |||||
| IGBT Thermal Resistance, Junction - Case | Rth(j-c) | 0.35 | K/W | |||
| Diode Thermal Resistance, Junction - Case | Rth(j-c) | 0.65 | K/W | |||
| Thermal Resistance, Junction - Ambient | Rth(j-a) | 40 | K/W |
2410121237_YANGJIE-DGW40N120CTLQ_C20600427.pdf
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