trench MOSFET HUASHUO HSK12N02 featuring low RDS ON and high cell density for power switching solutions
Key Attributes
Model Number:
HSK12N02
Product Custom Attributes
Drain To Source Voltage:
20V
Current - Continuous Drain(Id):
12A
Operating Temperature -:
-55℃~+150℃
RDS(on):
12mΩ@4.5V
Gate Threshold Voltage (Vgs(th)):
1.2V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
140pF@10V
Number:
1 N-channel
Input Capacitance(Ciss):
1.2nF@10V
Pd - Power Dissipation:
1.7W
Gate Charge(Qg):
15nC@4.5V
Mfr. Part #:
HSK12N02
Package:
SOT-89
Product Description
Product Overview
The HSK12N02 is a high cell density trenched N-channel MOSFET designed for excellent RDS(ON) and efficiency in small power switching and load switch applications. This fast-switching MOSFET offers super low gate charge and excellent Cdv/dt effect decline, utilizing advanced high cell density trench technology. It meets RoHS and Green Product requirements with full function reliability approval.
Product Attributes
- Brand: HS-Semi
- Product Line: HSK12N02
- Technology: Trench MOSFET
- Certifications: RoHS, Green Product
- Package: SOT-89
- Packaging: 1000/Tape&Reel
Technical Specifications
| Symbol | Parameter | Conditions | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|---|
| Absolute Maximum Ratings | ||||||
| VDS | Drain-Source Voltage | 20 | V | |||
| VGS | Gate-Source Voltage | ±12 | V | |||
| ID@TC=25 | Continuous Drain Current, VGS @ 4.5V1 | 12 | A | |||
| ID@TC=70 | Continuous Drain Current, VGS @ 4.5V1 | 9.3 | A | |||
| IDM | Pulsed Drain Current2 | 48 | A | |||
| PD@TA=25 | Total Power Dissipation3 | 1.7 | W | |||
| PD@TA=70 | Total Power Dissipation3 | 1.2 | W | |||
| TSTG | Storage Temperature Range | -55 | 150 | |||
| TJ | Operating Junction Temperature Range | -55 | 150 | |||
| Thermal Data | ||||||
| RJA | Thermal Resistance Junction-ambient | 100 | /W | |||
| Electrical Characteristics (TJ=25 , unless otherwise noted) | ||||||
| BVDSS | Drain-Source Breakdown Voltage | VGS=0V , ID=250µA | 20 | V | ||
| ΔBVDSS/ΔTJ | BVDSS Temperature Coefficient | Reference to 25, ID=1mA | 0.018 | V/ | ||
| RDS(ON) | Static Drain-Source On-Resistance2 | VGS=4.5V , ID=12A | 8.5 | 12 | mΩ | |
| VGS=2.5V , ID=8A | 11 | 16 | mΩ | |||
| VGS(th) | Gate Threshold Voltage | VGS=VDS , ID =250µA | 0.45 | 0.75 | 1.2 | V |
| ΔVGS(th)/ΔTJ | VGS(th) Temperature Coefficient | -3.1 | mV/ | |||
| IDSS | Drain-Source Leakage Current | VDS=16V , VGS=0V , TJ=25 | 1 | µA | ||
| VDS=16V , VGS=0V , TJ=55 | 5 | µA | ||||
| IGSS | Gate-Source Leakage Current | VGS=±12V , VDS=0V | ±100 | nA | ||
| gfs | Forward Transconductance | VDS=5V , ID=4A | 30 | S | ||
| Qg | Total Gate Charge (4.5V) | VDS=10V , VGS=4.5V , ID=4A | 15 | nC | ||
| Qgs | Gate-Source Charge | 2.5 | nC | |||
| Qgd | Gate-Drain Charge | 3.6 | nC | |||
| td(on) | Turn-On Delay Time | VDS=10V , VGS=4.5V , RG=3.3Ω ID=4A | 9 | ns | ||
| tr | Rise Time | 22 | ns | |||
| td(off) | Turn-Off Delay Time | 33 | ns | |||
| tf | Fall Time | 16 | ns | |||
| Ciss | Input Capacitance | VDS=10V , VGS=0V , f=1MHz | 1200 | pF | ||
| Coss | Output Capacitance | 180 | pF | |||
| Crss | Reverse Transfer Capacitance | 140 | pF | |||
| Diode Characteristics | ||||||
| IS | Continuous Source Current1,4 | VG=VD=0V , Force Current | 12 | A | ||
| ISM | Pulsed Source Current2,4 | 48 | A | |||
| VSD | Diode Forward Voltage2 | VGS=0V , IS=1A , TJ=25 | 1.2 | V | ||
Notes:
- 1: Tested by surface mounted on a 1 inch2 FR-4 board with 2OZ copper.
- 2: Tested by pulsed, pulse width ≤300µs, duty cycle ≤2%.
- 3: Power dissipation is limited by 150 junction temperature.
- 4: Data is theoretically the same as ID and IDM; in real applications, should be limited by total power dissipation.
2410122027_HUASHUO-HSK12N02_C28314509.pdf
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