100V fast switching MOSFET HUASHUO HSM8P10 P channel type with low gate charge and high cell density
Key Attributes
Model Number:
HSM8P10
Product Custom Attributes
Drain To Source Voltage:
100V
Current - Continuous Drain(Id):
8A
RDS(on):
110mΩ@10V,6A
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
2.5V
Reverse Transfer Capacitance (Crss@Vds):
25pF@20V
Number:
1 P-Channel
Pd - Power Dissipation:
3.1W
Input Capacitance(Ciss):
1.08nF@20V
Gate Charge(Qg):
19.8nC@10V
Mfr. Part #:
HSM8P10
Package:
SOP-8
Product Description
Product Overview
The HSM8P10 is a P-channel, 100V fast switching MOSFET designed with high cell density trenched technology. It offers excellent RDS(ON) and gate charge, making it suitable for most synchronous buck converter applications. This MOSFET meets RoHS and Green Product requirements and is 100% EAS guaranteed with full function reliability approved. Key advantages include super low gate charge and excellent CdV/dt effect decline.
Product Attributes
- Brand: HS-Semi
- Product Type: P-Channel MOSFET
- Technology: Trench
- Certifications: RoHS, Green Product
- Reliability: 100% EAS Guaranteed
Technical Specifications
| Symbol | Parameter | Conditions | Min. | Typ. | Max. | Units |
|---|---|---|---|---|---|---|
| Absolute Maximum Ratings | ||||||
| VDS | Drain-Source Voltage | -100 | V | |||
| VGS | Gate-Source Voltage | 20 | V | |||
| ID@TC=25 | Continuous Drain Current, VGS @ -10V1 | -8 | A | |||
| ID@TC=70 | Continuous Drain Current, VGS @ -10V1 | -3.8 | A | |||
| IDM | Pulsed Drain Current2 | -18 | A | |||
| EAS | Single Pulse Avalanche Energy3 | 55 | mJ | |||
| IAS | Avalanche Current | 3.1 | A | |||
| PD@TA=25 | Total Power Dissipation4 | 3.1 | W | |||
| TSTG | Storage Temperature Range | -55 | 150 | |||
| TJ | Operating Junction Temperature Range | -55 | 150 | |||
| Thermal Data | ||||||
| RJA | Thermal Resistance Junction-Ambient | --- | 61 | /W | ||
| RJC | Thermal Resistance Junction-Case1 | --- | 17 | /W | ||
| Electrical Characteristics (TJ=25 , unless otherwise noted) | ||||||
| BVDSS | Drain-Source Breakdown Voltage | VGS=0V , ID=-250uA | -100 | --- | --- | V |
| BVDSS/TJ | BVDSS Temperature Coefficient | Reference to 25 , ID=-1mA | --- | -0.03 | --- | V/ |
| RDS(ON),max | Static Drain-Source On-Resistance2 | VGS=-10V , ID=-6A | --- | 83 | 110 | m |
| VGS=-4.5V , ID=-3A | --- | 95 | 120 | m | ||
| VGS(th) | Gate Threshold Voltage | VGS=VDS , ID =-250uA | -1.2 | -1.8 | -2.5 | V |
| VGS(th) | VGS(th) Temperature Coefficient | --- | 4.56 | --- | mV/ | |
| IDSS | Drain-Source Leakage Current | VDS=-100V , VGS=0V , TJ=25 | --- | --- | 50 | uA |
| IGSS | Gate-Source Leakage Current | VGS=20V , VDS=0V | --- | --- | 100 | nA |
| gfs | Forward Transconductance | VDS=-10V , ID=-3A | --- | 24 | --- | S |
| Qg | Total Gate Charge | VDS=-48V , VGS=-10V , ID=-3A | --- | 19.8 | --- | nC |
| Qgs | Gate-Source Charge | --- | 3.9 | --- | nC | |
| Qgd | Gate-Drain Charge | --- | 4.5 | --- | nC | |
| Td(on) | Turn-On Delay Time | VDD=-50V , VGS=-10V , RG=3.3, ID=-1A | --- | 8.8 | --- | ns |
| Tr | Rise Time | --- | 29.6 | --- | ns | |
| Td(off) | Turn-Off Delay Time | --- | 77.2 | --- | ns | |
| Tf | Fall Time | --- | 89.6 | --- | ns | |
| Ciss | Input Capacitance | VDS=-20V , VGS=0V , f=1MHz | --- | 1080 | --- | pF |
| Coss | Output Capacitance | --- | 113 | --- | pF | |
| Crss | Reverse Transfer Capacitance | --- | 25 | --- | pF | |
| Diode Characteristics | ||||||
| IS | Continuous Source Current1,5 | VG=VD=0V , Force Current | --- | --- | -8 | A |
| ISM | Pulsed Source Current2,5 | --- | --- | -18 | A | |
| VSD | Diode Forward Voltage2 | VGS=0V , IS=-1A , TJ=25 | --- | --- | -1.2 | V |
| Ordering Information | ||||||
| Part Number | Package code | Packaging | ||||
| HSM8P10 | SOP-8 | 3000/Tape&Reel | ||||
Notes:
- The data tested by surface mounted on a 1 inch2 FR-4 board with 2OZ copper.
- The data tested by pulsed, pulse width 300s, duty cycle 2%.
- The EAS data shows Max. rating. The test condition is VDD=-80V, VGS=-10V, L=0.1mH.
- The power dissipation is limited by 150 junction temperature.
- The data is theoretically the same as ID and IDM, in real applications, should be limited by total power dissipation.
2410121641_HUASHUO-HSM8P10_C5128196.pdf
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