High Voltage TRIAC KY BTB24-800BW Featuring 25A RMS Current and 800V Peak Off State Voltage

Key Attributes
Model Number: BTB24-800BW
Product Custom Attributes
Holding Current (Ih):
80mA
Voltage - On State(Vtm):
1.55V
Average Gate Power Dissipation (PG(AV)):
1W
Current - On State(It(RMS)):
24A
Peak Off - State Voltage(Vdrm):
800V
SCR Type:
1 TRIAC
Gate Trigger Voltage (Vgt):
1.5V
Operating Temperature:
-40℃~+150℃
Mfr. Part #:
BTB24-800BW
Package:
TO-263
Product Description

BTA/BTB24 Series TRIACs

The BTA/BTB24 Series from ShenZhenHanKingyuan Electronic CO.,Ltd are 25A TRIACs available in both 3-quadrant and 4-quadrant configurations. These TRIACs are designed for applications requiring AC power control, such as washing machines, vacuum cleaners, massagers, solid-state relays, and AC motor speed regulation. They offer robust performance with high repetitive peak off-state voltages (up to 1200V) and a significant on-state current capability of 25A RMS.

Product Attributes

  • Brand: ShenZhenHanKingyuan Electronic CO.,Ltd
  • Series: BTA/BTB24
  • Product Type: TRIACs
  • Origin: Shenzhen
  • Registered Trademark: KY logo

Technical Specifications

Parameter Conditions BTA24-800 BTA24-1200 Unit
Repetitive Peak Off-State Voltage (VDRM/VRRM) 800 1200 V
R.M.S On-State Current (IT(RMS)) Tc=110C 25 A
Surge On-State Current (ITSM) Tp=10ms 280/300 A
It for fusing Tp=10ms 520 As
Average Gate Power Dissipation (PG(AV)) Tj=150C 1 W
Peak Gate Current (IGM) Tj=150C 6 A
Operating Junction Temperature (Tj) ~40~150 C
Storage Temperature (TSTG) ~40~150 C
Repetitive Peak Off-State Current (IDRM) Tj=25C 5 uA
Repetitive Peak Off-State Current (IDRM) Tj=150C 3 mA
Repetitive Peak Reverse Current (IRRM) Tj=25C 5 uA
Repetitive Peak Reverse Current (IRRM) Tj=150C 3 mA
Forward "on" voltage (VTM) IT=35A, tp=380us 1.55 V
Gate trigger voltage (VGT) VD=12V, RL=30 1.5 V
Critical rate of rise of on-state current (di/dt) I,II,III, F=120Hz, Tj=150C, IG=2xIGT, tr100ns 50 A/us
Critical rate of rise of on-state current (di/dt) IV, F=120Hz, Tj=150C, IG=2xIGT, tr100ns 10 A/us
Gate trigger current (IGT) I,II,III, VD=12V, RL=30 10 35 mA
Gate trigger current (IGT) IV, VD=12V, RL=30 50 50 mA
Gate trigger current (IGT) / , VD=12V, RL=30 100 100 mA
Holding current (IH) IT=0.2A 40 60 mA
Holding current (IH) IT=0.2A 80 80 mA
Gate non-trigger voltage (VDG) ALL, VD=VDRM, TJ=150C 0.2 V
Critical-rate of rise of commutation voltage (dv/dt) TJ=150C, VD=2/3VDRM, Gate open circuit 200 400 V/us
Critical-rate of rise of commutation voltage (dv/dt) TJ=150C, VD=2/3VDRM, Gate open circuit 1000 500 V/us

2511102004_KY-BTB24-800BW_C5366676.pdf

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