Single Diodes
High gain avalanche photodiode NEWOPTO XYC-APD1206AC-L3 with low capacitance and wide detection bandwidth
Huizhou Newopto Photoelectric Technology Co., Ltd. - Product Approval Sheet Customer Name: [Customer Name Not Specified] Product Model: XYC-APD1206AC-L3 Part No.: APD-1206 Series Edit Date: 2023-06-27 Edition: A0 Product Overview The APD-1206 series, specifically the XYC-APD1206AC-L3 model from Huizhou Newopto Photoelectric Technology Co., Ltd., is a compact, surface-mount avalanche photodiode designed for high reliability. It features high breakdown voltage, high gain, and
Schottky diode Minos MBR60200PT 200 volt 60 amp continuous forward current for power supply circuits
Product OverviewSBD Schottky Barrier Diode, 200V, 2x30A. Optimized for low forward voltage and low reverse leakage current, these diodes are suitable for high-frequency switched-mode power supplies. Key features include high ESD capability, 150 operating junction temperature, high-frequency operation, low IR value, and high surge capacity.Product AttributesBrand: SBDOrigin: Shenzhen Minos (implied by contact information)Certifications: None explicitly mentionedMaterial: Not
Soft Recovery Ultrafast Diode Minos MUR1620CT 16A for Power Conditioning and HF Welding Applications
Product OverviewThe Minos Ultrafast Soft Recovery Diode, 16A, is optimized for reduced losses and EMI/RFI in high-frequency power conditioning systems. Its soft recovery behavior makes it suitable as a snubber in most applications, ideal for HF welding power converters and other scenarios where switching losses are not a significant factor.Product AttributesBrand: Minos High Power ProductsOrigin: Shenzhen Minos (implied by contact information)Technical SpecificationsParameter
High Frequency Power Supply Diode Minos MBRF10200CT with Low Reverse Leakage and High Surge Capacity
Product OverviewThe MBRF10200CT is a SBD Schottky Barrier Diode designed for high-frequency switched mode power supplies. It is optimized for low forward voltage and low reverse leakage current, offering high ESD capability, 150 operating junction temperature, high frequency operation, low IR value, and high surge capacity. This diode is ideal for applications requiring efficient and reliable power conversion.Product AttributesBrand: MNS (derived from www.mns-kx.com)Origin:
Low IR Value Schottky Diode Minos MBRF20200CT for High Frequency Power Supply and Switching Circuits
Product OverviewThe MBRF200CT is a SBD Schottky Barrier Diode optimized for low forward voltage and low reverse leakage current. It is designed for high-frequency switched-mode power supplies, offering high ESD capability, 150 operating junction temperature, high frequency operation, low IR value, and high surge capacity.Product AttributesBrand: MNS-KXOrigin: Shenzhen Minos (implied by contact information)Technical SpecificationsParameterSymbolTest ConditionsValuesUnitsAbsolu
surface mount Schottky diode MEGSINE MDD7630-323 ideal for RF microwave mixer detector circuits
Product OverviewThe MDD7630-323 is a cost-effective, surface-mountable Schottky diode designed for RF and microwave mixer and detector applications. It is ideal for high-volume wireless, sampling, mixer circuits, low-noise receivers in high-sensitivity ID tags, and radio designs. All components are 100% RF tested.Product AttributesBrand: MegsineOrigin: Shenzhen Megsine technology co., ltdCertifications: RoHS Compliance (Pb-Free)Technical SpecificationsParameterSymbolMinimumMa
Soft Recovery Diode 600V 30A Minos MUR6060PT Suitable for Switched Mode Power Supplies and Inverter Welding
Product DescriptionFRED Ultrafast Soft Recovery Diode, 600V, 30A2. Optimized for reduced losses and EMI/RFI in high-frequency power conditioning systems. Features soft recovery for buffering in most applications. Suited for power converters and applications where switching losses are not a significant portion of total losses.Key Features:Ultrafast Recovery175 Operating Junction TemperatureHigh Frequency OperationLow IR ValueHigh Surge CapacityEpitaxial Chip ConstructionApplic
Power Schottky Barrier Rectifier Minos MBR30100CT for in Low Voltage High Frequency Inverter Circuits
Product OverviewPOWER SCHOTTKY BARRIER RECTIFIER designed for low voltage high frequency inverter circuits, freewheeling circuits, and protection circuits. It offers reliable performance with specified voltage and current ratings.Product AttributesBrand: MNS-KXOrigin: Shenzhen, ChinaTechnical SpecificationsParameterSymbolDescriptionMinTypicalMaxUnitTest ConditionsStorage TemperatureTstg-65175Junction TemperatureTj-65150Max Reverse Repetitive Peak VoltageVRRM100VReverse Peak
Ultrafast soft recovery diodes Minos 60F30 optimized for reduced losses and improved EMI performance
Product OverviewThese ultrafast soft recovery diodes are optimized for reduced losses and improved EMI/RFI performance in high-frequency power conditioning systems. Their soft recovery characteristic often eliminates the need for a snubber circuit. Ideal for applications like HF welding power converters where switching losses are not a primary concern.Product AttributesBrand: MNS-KXOrigin: Shenzhen, ChinaTechnical SpecificationsParameterSymbolTest ConditionsMinTyp.Max
80A Forward Current Soft Recovery Diode Minos F80UP40DN for High Frequency Power Conditioning and Snubber Circuits
Product OverviewThis FRD Ultrafast Soft Recovery Diode, 80A is optimized for reduced losses and EMI/RFI in high-frequency power conditioning systems. Its soft recovery behavior serves as a snubber in many applications, making it ideal for HF welding power converters and other scenarios where switching losses are not a significant factor.Product AttributesBrand: MNS-KXOrigin: Shenzhen Minos (implied from contact information)Technical SpecificationsParameterSymbolTest
Stud Cathode Zener Diode MASPOWER MSZ01N24SS with 1 Picosecond Response Speed and High Power Dissipation
Product Overview The MSZ01N24SS H1.03 by Maspower is a stud cathode Zener diode designed for sensitive electronic device protection. It features low leakage current, fast response speed (less than 1ps from 0V to VBR), and a glass-passivated junction for excellent clamping capability. This diode can withstand 5000W peak pulse power (10/1000s) and is ideal for protecting I/O interfaces, VCC buses, vulnerable telecom circuits, and computer, industrial, and consumer electronics.
Power Schottky Barrier Rectifier Minos MBR10100CT for Low Voltage High Frequency Inverter Circuits
Product OverviewThis Power Schottky Barrier Rectifier is designed for low-voltage, high-frequency inverter circuits, freewheeling circuits, and protection circuits. It offers efficient rectification with low forward voltage drop and fast switching speeds.Product AttributesBrand: MNS (implied from www.mns-kx.com)Origin: Shenzhen, China (implied from contact information)Material: Not specifiedColor: Not specifiedCertifications: Not specifiedTechnical SpecificationsParameterSymb
Small signal switching diode LIZ CD4148WP silicon epitaxial planar type with SMD chip pattern and RoHS compliance
Product OverviewThe CD4148WP is a silicon epitaxial planar switching diode designed for small signal switching applications. It features an SMD chip pattern, is lead-free and RoHS compliant, and is available in various dimensions including 0805 and 0603. While suitable for general applications, it is not recommended for AC switching input as rectified circuits or high reverse voltage locations. The CD4148WN variant is recommended for such applications.Product AttributesBrand:
SMD chip silicon epitaxial planar diode LIZ CD4148WTP lead free RoHS compliant for small signal switching
Product OverviewThe CD4148WTP is a silicon epitaxial planar switching diode designed for small signal applications. It is available in SMD chip patterns, including 1206 & 0805 dimensions, and is lead-free and RoHS compliant. This component is suitable for operating ambient temperatures less than 55C and voltage withstand less than 60V, but is not recommended for AC switching input as rectified circuits or high reverse voltage locations.Product AttributesBrand: Not specifiedOr
Silicon epitaxial planar switching diode LIZ CD4148WSP designed for small signal electronic applications
Product OverviewThe CD4148WSP is a silicon epitaxial planar switching diode designed for small signal applications. It features an SMD chip pattern, is lead-free and RoHS compliant, and is suitable for general applications except those requiring high reverse voltage. For applications with ambient temperatures below 55C and voltage withstand below 60V, the CD4148WSN is recommended.Product AttributesBrand: Not specifiedOrigin: Not specifiedMaterial: Silicon epitaxial planarColo
Silicon Carbide Diode KNSCHA KN3D20065D High Blocking Voltage and Zero Recovery Current for Operation
Product OverviewThe Silicon Carbide Schottky KN3D10065H Diode is a high-performance diode designed for demanding applications. It offers zero forward/reverse recovery current, high blocking voltage, and high-frequency operation, leading to higher system efficiency and reliability. Its positive temperature coefficient on VF and temperature-independent switching behavior make it suitable for parallel device configurations without thermal runaway and for high-temperature
Silicon Carbide Schottky Diode KNSCHA KN3D10120A with Zero Reverse Recovery Current and Switching
Product OverviewThe KN3D10120A is a Silicon Carbide Schottky Diode featuring a 1.2kV rating, zero reverse recovery current, and temperature-independent switching for high-frequency operation. Its unipolar nature eliminates switching losses, enabling high efficiency and reducing the need for large heatsinks. This diode is suitable for parallel operation without thermal runaway and is ideal for applications such as switching mode power supplies, boost diodes in PFC, DC/DC and
650V Silicon Carbide Diode KNSCHA KN3D06065A with Continuous Forward Current 19A and TO220-2 Package
Product OverviewThe KN3D06065A is a Silicon Carbide Schottky Diode designed for high-frequency operation and high-temperature applications. It offers zero forward/reverse recovery, high blocking voltage, and a positive temperature coefficient on VF, contributing to high system efficiency and reliability in demanding environments. Its temperature-independent switching behavior makes it suitable for hard switching applications and environmental protection.Product AttributesBran
Voltage Regulation Silicon Zener Diode KEC KDZ3.6V-RTK P Featuring USC Package and Nominal Tolerance
Product Overview The KDZ series are silicon epitaxial planar Zener diodes designed for constant voltage regulation and reference voltage applications. These diodes are characterized by their small USC package and a nominal voltage tolerance of approximately 6%. They are suitable for various electronic circuits requiring stable voltage references. Product Attributes Package Type: USC Diode Type: Zener Diode Material: Silicon Epitaxial Planar Technical Specifications Model
Schottky barrier diode KEC KDR412-RTK P with rectification and silicon epitaxial planar construction
Product Overview The KDR412 is a Schottky barrier type diode designed for low-power rectification in switching power supplies. It features a small surface mounting type (USC) package and a low forward voltage (VF max=0.5V), offering high reliability. Its silicon epitaxial planar construction ensures robust performance. Product Attributes Construction: Silicon epitaxial planar Type: Schottky Barrier Type Diode Application: Low Power Rectification for Switching Power Supply
